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< Page ,Total 1273 >
Reliability-oriented Networking Planning for Meshed VSC-HVDC Grids EI Scopus SCIE
期刊论文 | 2019 , 34 (2) , 1342-1351 | IEEE Transactions on Power Systems
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Abstract :

The paper proposes a reliability-oriented planning method to design reliable topologies for meshed high-voltage direct current (HVDC) grids. Based on the proposed steady-state model for HVDC grids, a bi-level and multi-objective planning problem is formulated. The optimization model not only regards reliability as an independent objective but also takes the power flow controllers (PFCs) into account. Compared with conventional methods, it overcomes the curse of dimensionality and solves the optimal allocation of PFCs. Then, the nondominated sorting genetic algorithm II (NSGA-II) is employed to solve the upperlevel problem. For lower-level problems, an algorithm based on minimum spanning trees is proposed to optimally allocate PFCs, and an improved least frequently used (LFU) cache algorithm and an optimum-test algorithm are developed to promote the computing efficiency of reliability evaluation. The European Supergrid and a Chinese ultra-HVDC system are adopted as test systems to validate the proposed method. Case studies prove the proposed method provides an effective tool for the planning of HVDC grids. Also, results show that the cache technique and the optimum-test algorithm can reduce more than 70% of the total elapsed time. IEEE

Keyword :

Cache algorithms Expansion planning Hvdc grids HVDC transmission Power flow controllers Power system reliability Reliability engineering Reliability Evaluation

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GB/T 7714 Xie, Haipeng , Bie, Zhaohong , Li, Gengfeng . Reliability-oriented Networking Planning for Meshed VSC-HVDC Grids [J]. | IEEE Transactions on Power Systems , 2019 , 34 (2) : 1342-1351 .
MLA Xie, Haipeng 等. "Reliability-oriented Networking Planning for Meshed VSC-HVDC Grids" . | IEEE Transactions on Power Systems 34 . 2 (2019) : 1342-1351 .
APA Xie, Haipeng , Bie, Zhaohong , Li, Gengfeng . Reliability-oriented Networking Planning for Meshed VSC-HVDC Grids . | IEEE Transactions on Power Systems , 2019 , 34 (2) , 1342-1351 .
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Literature review on modeling and simulation of energy infrastructures from a resilience perspective EI SSCI SCIE
期刊论文 | 2019 , 183 , 360-373 | Reliability Engineering and System Safety
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Abstract :

Recent years have witnessed an increasing frequency of disasters, both natural and human-induced. This applies pressure to critical infrastructures (CIs). Among all the CI sectors, the energy infrastructure plays a critical role, as almost all other CIs depend on it. In this paper, 30 energy infrastructure models dedicated for the modeling and simulation of power or natural gas networks are collected and reviewed using the emerging concept of resilience. Based on the review, typical modeling approaches for energy infrastructure resilience problems are summarized and compared. The authors, then, propose five indicators for evaluating a resilience model; namely, catering to different stakeholders, intervening in development phases, dedicating to certain stressor and failure, taking into account different interdependencies, and involving socio-economic characteristics. As a supplement, other modeling features such as data needs and time scale are further discussed. Finally, the paper offers observations of existing energy infrastructure models as well as future trends for energy infrastructure modeling. © 2018

Keyword :

Energy infrastructures Model and simulation Model evaluation Natural gas networks Power grids Resilience

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GB/T 7714 Wang, Jing , Zuo, Wangda , Rhode-Barbarigos, Landolf et al. Literature review on modeling and simulation of energy infrastructures from a resilience perspective [J]. | Reliability Engineering and System Safety , 2019 , 183 : 360-373 .
MLA Wang, Jing et al. "Literature review on modeling and simulation of energy infrastructures from a resilience perspective" . | Reliability Engineering and System Safety 183 (2019) : 360-373 .
APA Wang, Jing , Zuo, Wangda , Rhode-Barbarigos, Landolf , Lu, Xing , Wang, Jianhui , Lin, Yanling . Literature review on modeling and simulation of energy infrastructures from a resilience perspective . | Reliability Engineering and System Safety , 2019 , 183 , 360-373 .
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Charging characteristics and micromechanism of space electrons irradiated polymers SCIE
期刊论文 | 2019 , 68 (5) | ACTA PHYSICA SINICA
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Abstract :

The charging characteristics and microscopic mechanism of space electrons irradiated polymers are the basis for the study and protection of spacecraft polymer charging and discharging characteristics. Monte Carlo method is used to simulate the scattering process of space electrons, and the fast secondary electron model simulates the generation of secondary electrons. The finite difference method is used to solve the charge transport process of charge continuity equation, current density equation and Poisson equation. The capture process realizes the transmission process of space electrons through the equation based on the Poole-French effect. Based on the electronic scattering/transport synchronization model and combined with the geostationary earth orbit electronic spectrum distribution theoretical formula of the French National Aeronautics and Space Research Agency (ONERA) and the ground experimental method of the agency (SIRNE), a scattering model based on the electron spectrum distribution in geosynchronous orbit is established. The numerical simulation of the charging process of space electrons irradiated polymers is carried out. The space charge density, space potential, electric field distribution and the space potential of polymer sample under the irradiation of single- and multi-energy electrons in space environment are obtained. The relationship among charging characteristics, microscopic parameters and surface potential of the sample is clarified. The surface potential characteristics of space electrons irradiated polymer are consistent with the experimental results. The single energy charge potential and strength are higher than those of multi-energy electrons. When the charging reaches a steady state, the electron mobility is smaller (less than 10(-11) cm(2).V-1.s(-1)), and the absolute value of the space potential is significantly enhanced with the decrease of the electron mobility. When the composite rate is large (greater than 10(-14) cm(3).s(-1)), the absolute value of the spatial potential increases with recombination rate increasing. The study of the charging characteristics of space electrons is not comprehensive because only the mode of single-energy electron irradiation is taken into consideration. The research results are of great scientific significance and practical value for revealing the charging characteristics and microscopic mechanism of space electrons irradiated polymer and improving the research level of spacecraft charge and discharge fault mechanism.

Keyword :

polyimide numerical simulation space radiation charging characteristics

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GB/T 7714 Liu Jing , Zhang Hai-Bo . Charging characteristics and micromechanism of space electrons irradiated polymers [J]. | ACTA PHYSICA SINICA , 2019 , 68 (5) .
MLA Liu Jing et al. "Charging characteristics and micromechanism of space electrons irradiated polymers" . | ACTA PHYSICA SINICA 68 . 5 (2019) .
APA Liu Jing , Zhang Hai-Bo . Charging characteristics and micromechanism of space electrons irradiated polymers . | ACTA PHYSICA SINICA , 2019 , 68 (5) .
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Design and numerical analysis of high-reflective film used in F-P sapphire optical fiber high-temperature sensor SCIE
期刊论文 | 2019 , 39 (2) , 162-170 | SENSOR REVIEW
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Purpose The Fabry-Perot sapphire optical fiber sensor is an excellent choice for high-temperature sensing in civil and military fields, such as oil exploitation, engine and turbine. The purpose of this paper is to study the high-reflective film system withstanding high temperature in Fabry-Perot sapphire optical fiber high-temperature sensor. To improve the performance of the sensor and reduce the difficulty of signal acquisition, one of the key ways is to enhance the normalized light intensity of F-P sensor, which can be achieved by coating the high-reflective film system on the fiber end. Design/methodology/approach The high-reflective film system can be achieved by a multilayer film with alternating ZrO2 and Al2O3 film layers whose refractive indexes are different. In addition, the optimum film alternating sequences and the influence of the number of film layers, incident angle and temperature should be obtained by numerical analysis. Findings With the increase of the number of film layers, the reflectivity rises gradually and the change trend is more and more gentle. A minimum of the spectral reflectivity will occur at a certain incident angle depending on the design of the periodic multilayer system. Temperature affects the reflectivity of high-reflective film system. The normalized light intensity of the F-P sensor coated with high-reflective film system enhances greatly which is helpful to the signal demodulation. The temperature response of the F-P sensor is mainly determined by the characteristics of the F-P cavity. Originality/value Higher reflectivity, lower cost and easy signal acquisition are the most important features of the introduced high-reflective film system for the Fabry-Perot sapphire optical fiber high-temperature sensor.

Keyword :

High-reflective film Numerical analysis F-P optical fiber sensor High temperature measurement Reflectivity

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GB/T 7714 Lin, Qijing , Wu, Zirong , Zhao, Na et al. Design and numerical analysis of high-reflective film used in F-P sapphire optical fiber high-temperature sensor [J]. | SENSOR REVIEW , 2019 , 39 (2) : 162-170 .
MLA Lin, Qijing et al. "Design and numerical analysis of high-reflective film used in F-P sapphire optical fiber high-temperature sensor" . | SENSOR REVIEW 39 . 2 (2019) : 162-170 .
APA Lin, Qijing , Wu, Zirong , Zhao, Na , Jiang, Zhuangde , Zhang, Qidong , Tian, Bian et al. Design and numerical analysis of high-reflective film used in F-P sapphire optical fiber high-temperature sensor . | SENSOR REVIEW , 2019 , 39 (2) , 162-170 .
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Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy EI Scopus SCIE
期刊论文 | 2019 , 34 (2) , 1334-1355 | IEEE Transactions on Power Electronics
WoS CC Cited Count: 1 SCOPUS Cited Count: 2
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Abstract :

Balanced issues of neutral-point (NP) voltage in the neutral-point-clamped (NPC) three-level photovoltaic converter have been deeply studied. Numerous algorithms for NP voltage control have been proposed and proven to be effective in normal operations. However, most of previous studies fail to consider effect of imbalanced loads on NP voltage, especially under low-voltage-ride-through (LVRT) condition, which faces problems of imbalanced grid voltages and low power factor. In this paper, through derivation of NP current model for different loading conditions, the behavior of NP voltage under LVRT condition is comprehensively analyzed for the first time. Then, theoretical limitations of NP voltage control based on two common space-vector-pulse-width modulations (SVPWM) that three-nearest-vectors and symmetric SVPWM are investigated, and additional low-frequency oscillation in NP voltage is analyzed. This oscillation is dominated by fundamental frequency and has different generation mechanisms under different imbalanced grid faults. Then, a novel method of selective hybrid SVPWM, as selective combinations of SVPWM and virtual SVPWM according to different imbalanced grid faults, is proposed to effectively suppress NP voltage oscillations in LVRT operation without any complex improvements and increase of DC-link capacitor values. Finally, the analytical result and performance of proposed method are confirmed in an existing 300kW NPC converter. IEEE

Keyword :

Low voltage ride through (LVRT) Neutral point clamped Neutral-point voltage balances Photovoltaic converter Space vector pulse width modulation

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GB/T 7714 Li, Yang , Yang, Xu , Chen, Wenjie et al. Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy [J]. | IEEE Transactions on Power Electronics , 2019 , 34 (2) : 1334-1355 .
MLA Li, Yang et al. "Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy" . | IEEE Transactions on Power Electronics 34 . 2 (2019) : 1334-1355 .
APA Li, Yang , Yang, Xu , Chen, Wenjie , Liu, Tao , Zhang, Feng . Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy . | IEEE Transactions on Power Electronics , 2019 , 34 (2) , 1334-1355 .
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A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs EI Scopus SCIE
期刊论文 | 2019 , 34 (3) , 2002-2006 | IEEE Transactions on Power Electronics
WoS CC Cited Count: 3 SCOPUS Cited Count: 2
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Abstract :

Semiconductor devices based solid-state circuit breakers (SSCBs) are promising in the DC power distribution system as protective equipment for their ultra-short action time. This letter proposes a topology of SSCB using series connected silicon carbide (SiC) MOSFETs, which only requires a single isolated gate driver. The SSCB has very low cost and high reliability because it only has 13 components including passive components and diodes apart from two SiC MOSFETs to achieve both balanced voltage distribution during short-circuit interruption duration and reliable positive gate voltage during on-state. The SSCB prototype is built and experimentally verified to interrupt 75 A short-circuit current under the DC bus voltage of 1200 V within 1.5 &#x03BC;s. IEEE

Keyword :

Gate drivers Integrated circuit reliability MOS-FET Series connections SiC MOSFET Solid State Circuit Breaker Voltage balancing Wide band gap devices

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GB/T 7714 Ren, Yu , Yang, Xu , Zhang, Fan et al. A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs [J]. | IEEE Transactions on Power Electronics , 2019 , 34 (3) : 2002-2006 .
MLA Ren, Yu et al. "A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs" . | IEEE Transactions on Power Electronics 34 . 3 (2019) : 2002-2006 .
APA Ren, Yu , Yang, Xu , Zhang, Fan , Wang, Fei , Tolbert, Leon M. , Pei, Yunqing . A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs . | IEEE Transactions on Power Electronics , 2019 , 34 (3) , 2002-2006 .
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High impedance fault detection method based on improved complete ensemble empirical mode decomposition for DC distribution network EI SCIE
期刊论文 | 2019 , 107 , 538-556 | International Journal of Electrical Power and Energy Systems
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Aiming at DC distribution network, we proposed a novel high impedance fault detection method in the paper, it main procedures are as follows: Firstly, used the algorithm of complete ensemble empirical mode decomposition with adaptive noise (CEEMDAN) to extract the first intrinsic mode function (IMF) of the characteristic mode. Secondly, calculated the singular point of mutation and the cumulative slope by the acquisition of the first order difference operation, and then, achieved to distinguish the fault state and the normal state by the comparison between the slope and the starting threshold. Thirdly, identified the first IMF with Prony algorithm to obtain the parameters of characteristic frequency components (CFC) and direct current components (DC), and calculated the energy ratio between them, and then, distinguished small impedance fault (SIF), medium impedance fault (MIF), high impedance fault (HIF) and load switching (LS) by different values of energy ratio. A large number of experiments show that the proposed method is accurate and effective. Compared with other methods, this method shows its merits in feature extraction accuracy, detection accuracy and calculation speed. © 2018 Elsevier Ltd

Keyword :

Characteristic frequencies DC distribution network Ensemble empirical mode decomposition First order differences High impedance fault High impedance fault detection Intrinsic Mode functions Mode currents

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GB/T 7714 Wang, Xiaowei , Song, Guobing , Gao, Jie et al. High impedance fault detection method based on improved complete ensemble empirical mode decomposition for DC distribution network [J]. | International Journal of Electrical Power and Energy Systems , 2019 , 107 : 538-556 .
MLA Wang, Xiaowei et al. "High impedance fault detection method based on improved complete ensemble empirical mode decomposition for DC distribution network" . | International Journal of Electrical Power and Energy Systems 107 (2019) : 538-556 .
APA Wang, Xiaowei , Song, Guobing , Gao, Jie , Wei, Xiangxiang , Wei, Yanfang , Mostafa, Kheshti et al. High impedance fault detection method based on improved complete ensemble empirical mode decomposition for DC distribution network . | International Journal of Electrical Power and Energy Systems , 2019 , 107 , 538-556 .
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Surface potential and charging of polymer films submitted to defocused electron beam irradiation. EI PubMed Scopus SCIE
期刊论文 | 2019 , 116 , 100-107 | Micron
WoS CC Cited Count: 1 SCOPUS Cited Count: 1
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Abstract :

The surface potentials and dynamic charging properties of polymers subjected to electron irradiation in scanning electron microscopy are investigated by using a novel method applied in parallel with simulation and experimental methods. We perform our simulation through a parallel computing method with various microscopic parameters. The results show that under the given microscopic parameters, the charging time concomitantly decreases as the film thickness, electron mobility, trap cross and recombination rate increase. The surface potential decreases as electron energy, beam current density, capture cross section, sample thickness and electron-hole recombination rate increase and as electron mobility decreases. Charging time increases with increasing beam density, sample thickness, recombination rate and change in capture cross-section, and decreases with increasing electron mobility. The primary-electron energy exhibits an inflection point at 35 keV. This study offers an intuitive analytical and measurement method for understanding microscopic charge characteristics in electron-based surface microscopy.

Keyword :

Irradiation Numerical simulation Polymer Surface Charging Defocused Electro N beam

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GB/T 7714 Liu Jing , Zhang Hai-Bo , Ding Yue-Hu et al. Surface potential and charging of polymer films submitted to defocused electron beam irradiation. [J]. | Micron , 2019 , 116 : 100-107 .
MLA Liu Jing et al. "Surface potential and charging of polymer films submitted to defocused electron beam irradiation." . | Micron 116 (2019) : 100-107 .
APA Liu Jing , Zhang Hai-Bo , Ding Yue-Hu , Yan Zhong , Tong Ji-Sheng , Yuan Ye et al. Surface potential and charging of polymer films submitted to defocused electron beam irradiation. . | Micron , 2019 , 116 , 100-107 .
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A Composite Exponential Model to Characterize Nonlinearity Causing Passive Intermodulation Interference Scopus SCIE
期刊论文 | 2019 , 61 (2) , 590-594 | IEEE Transactions on Electromagnetic Compatibility
WoS CC Cited Count: 1 SCOPUS Cited Count: 1
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IEEEPassive intermodulation (PIM) interference that occurs in communication systems could limit the communication capacity and increase the manufacturing and maintenance costs. In this letter, a composite exponential model is developed to characterize the weak nonlinearity of passive components that causes PIM generation accurately. This proposed model fully considers the correlation between the PIM products on each order and the relation of PIM products with variation of carrier powers. For verification, a microwave filter is given to demonstrate the effectiveness of this composite model, and the reliability of this model is proved by the sensitivity analysis due to measurement uncertainty. Besides, the good agreement between the calculated powers of PIM products and the measured data shows that it can provide a theoretical guidance for PIM performance assessment in engineering application, thereby evaluating the influence of PIM interference on communication quality effectively.

Keyword :

Composite exponential model microwave filter nonlinearity passive intermodulation (PIM) sensitivity analysis

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GB/T 7714 Zhang, Lei , Wang, Hongguang , Shen, Jialin et al. A Composite Exponential Model to Characterize Nonlinearity Causing Passive Intermodulation Interference [J]. | IEEE Transactions on Electromagnetic Compatibility , 2019 , 61 (2) : 590-594 .
MLA Zhang, Lei et al. "A Composite Exponential Model to Characterize Nonlinearity Causing Passive Intermodulation Interference" . | IEEE Transactions on Electromagnetic Compatibility 61 . 2 (2019) : 590-594 .
APA Zhang, Lei , Wang, Hongguang , Shen, Jialin , Wei, Huan , Wang, Xinbo , Li, Yongdong et al. A Composite Exponential Model to Characterize Nonlinearity Causing Passive Intermodulation Interference . | IEEE Transactions on Electromagnetic Compatibility , 2019 , 61 (2) , 590-594 .
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Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit EI Scopus SCIE
期刊论文 | 2019 , 34 (4) , 3711-3728 | IEEE Transactions on Power Electronics
WoS CC Cited Count: 3 SCOPUS Cited Count: 2
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Commercially available normally-off GaN power HEMT devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction and a p-GaN/AlGaN/GaN heterojunction. With drain voltage changing during a switching process, the variation of net charge in the floating p-GaN layer would cause instability in threshold voltage. Besides, the gate-related junction capacitances would exhibit behavior different from those of a Si MOSFET. Consequently, the switching transient performance of a GaN transistor with a p-GaN gate could be significantly influenced by the aforementioned factors. In this work, the threshold voltage instability associated with the drain-to-gate voltage stress is firstly analyzed. Despite the difficulties in directly performing capacitance measurements inside the device structure, a hybrid physical-behavior modeling method is proposed. The model is capable of extracting the capacitance-bias relationships with regard to the gate region from static terminal measurements. In previous works, the advanced analytical model would make modest change on Si MOSFET's model. As a result, the simulated waveforms would exhibit 20 <formula><tex>$\times$</tex></formula> 50% discrepancy from experiment. In contrast, the proposed switching transient analytical approach would exhibit improved accuracy. Consequently, the switching transient performance of GaN transistor with p-GaN gate could be more accurately evaluated. IEEE

Keyword :

Analytical approach GaN HEMTs Junction capacitances Physical behaviors Schottky junctions Switching transient Terminal measurements Threshold-voltage instabilities

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GB/T 7714 Xie, Ruiliang , Yang, Xu , Xu, Guangzhao et al. Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit [J]. | IEEE Transactions on Power Electronics , 2019 , 34 (4) : 3711-3728 .
MLA Xie, Ruiliang et al. "Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit" . | IEEE Transactions on Power Electronics 34 . 4 (2019) : 3711-3728 .
APA Xie, Ruiliang , Yang, Xu , Xu, Guangzhao , Wei, Jin , Wang, Yuru , Wang, Hanxing et al. Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit . | IEEE Transactions on Power Electronics , 2019 , 34 (4) , 3711-3728 .
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