• Complex
  • Title
  • Author
  • Keyword
  • Abstract
  • Scholars
Export Sort by:
Default
  • Default
  • Title
  • Year
  • WOS Cited Count
  • Impact factor
  • Ascending
  • Descending
< Page ,Total 5 >
Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer EI SCIE Scopus
期刊论文 | 2018 , 26 (2) , 1817-1824 | OPTICS EXPRESS
Abstract&Keyword Cite

Abstract :

We demonstrated a method to obtain super flexible LEDs, based on high quality pyramid arrays grown directly on sapphire substrates. Laser lift-off (LLO) and dual transfer processes were applied to transfer pyramid arrays face up onto the flexible substrates, which is more efficient than back light emission. Ag grid and Ag nanowires were employed as the electrical connection. No significant performance reduction appeared until the device reached a curvature radius of 0.5 mm. The performance reduction results from cracks appearing at the junction of the Ag grid, which can be improved by replacing the Ag grid with a strip electrode. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Tian, Zhenhuan , Li, Yufeng , Su, Xilin et al. Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer [J]. | OPTICS EXPRESS , 2018 , 26 (2) : 1817-1824 .
MLA Tian, Zhenhuan et al. "Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer" . | OPTICS EXPRESS 26 . 2 (2018) : 1817-1824 .
APA Tian, Zhenhuan , Li, Yufeng , Su, Xilin , Feng, Lungang , Wang, Shuai , Ding, Wen et al. Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer . | OPTICS EXPRESS , 2018 , 26 (2) , 1817-1824 .
Export to NoteExpress RIS BibTex
Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering EI SCIE PubMed Scopus
期刊论文 | 2018 , 29 (16) | NANOTECHNOLOGY
Abstract&Keyword Cite

Abstract :

Tin-doped indium oxide (ITO) nanowires are successfully fabricated using a radio frequency (RF) sputtering technique with a high RF power of 250 W. The fabrication of the ITO nanowires is optimized through the study of oxygen flow rates, temperatures and RF power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target is observed and the mechanism for the difference is discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method demonstrated good conductivity (15 Omega sq(-1])) and a transmittance of more than 64% at a wavelength longer than 550 nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices.

Keyword :

vapor-liquid-solid growth gas sensor radio-frequency sputtering ITO nanowires

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Li, Qiang , Zhang, Yuantao , Feng, Lungang et al. Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering [J]. | NANOTECHNOLOGY , 2018 , 29 (16) .
MLA Li, Qiang et al. "Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering" . | NANOTECHNOLOGY 29 . 16 (2018) .
APA Li, Qiang , Zhang, Yuantao , Feng, Lungang , Wang, Zuming , Wang, Tao , Yun, Feng . Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering . | NANOTECHNOLOGY , 2018 , 29 (16) .
Export to NoteExpress RIS BibTex
Characteristics of GaN-based 500nm light-emitting diodes with embedded hemispherical air-cavity structure EI SCIE Scopus
期刊论文 | 2018 , 123 (12) | JOURNAL OF APPLIED PHYSICS
WoS CC Cited Count: 1
Abstract&Keyword Cite

Abstract :

GaN-based 500 nm light-emitting diodes (LEDs) with an air-cavity formed on a laser-drilled hemispherical patterned sapphire substrate (HPSS) were investigated. The cross-section transmission electron microscopy image of the HPSS-LED epilayer indicated that most of the threading dislocations were bent towards the lateral directions. It was found that in InGaN/GaN multiple quantum wells (MQWs) of HPSS-LEDs, there were fewer V-pits and lower surface roughness than those of conventional LEDs which were grown on flat sapphire substrates (FSSs). The high-resolution x-ray diffraction showed that the LED grown on a HPSS has better crystal quality than that grown on a FSS. Compared to FSS-LEDs, the photoluminescence (PL) intensity, the light output power, and the external quantum efficiency at an injected current of 20mA for the HPSS-LED were enhanced by 81%, 65%, and 62%, respectively, such enhancements can be attributed to better GaN epitaxial quality and higher light extraction. The slightly peak wavelength blueshift of electroluminescence for the HPSS-LED indicated that the quantum confined Stark effect in the InGaN/GaN MQWs has been reduced. Furthermore, it was found that the far-field radiation patterns of the HPSS-LED have smaller view angles than that of the FSS-LED. In addition, the scanning near field optical microscope results revealed that the area above the air-cavity has a larger PL intensity than that without an air-cavity, and the closer to the middle of the air-cavity the stronger the PL intensity. These nano-light distribution findings were in good agreement with the simulation results obtained by the finite difference time domain method. Published by AIP Publishing.

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Zhang, Minyan , Li, Yufeng , Li, Qiang et al. Characteristics of GaN-based 500nm light-emitting diodes with embedded hemispherical air-cavity structure [J]. | JOURNAL OF APPLIED PHYSICS , 2018 , 123 (12) .
MLA Zhang, Minyan et al. "Characteristics of GaN-based 500nm light-emitting diodes with embedded hemispherical air-cavity structure" . | JOURNAL OF APPLIED PHYSICS 123 . 12 (2018) .
APA Zhang, Minyan , Li, Yufeng , Li, Qiang , Su, Xilin , Wang, Shuai , Feng, Lungang et al. Characteristics of GaN-based 500nm light-emitting diodes with embedded hemispherical air-cavity structure . | JOURNAL OF APPLIED PHYSICS , 2018 , 123 (12) .
Export to NoteExpress RIS BibTex
A Novel Approach to Characterize Phosphor Particles for the Color Tuning of WLEDs EI SCIE Scopus
期刊论文 | 2018 , 30 (6) , 513-516 | IEEE PHOTONICS TECHNOLOGY LETTERS
Abstract&Keyword Cite

Abstract :

A novel approach was proposed to characterize the optical performance of phosphor particles based on a laser particle analyzer (LPA). For Sr3SiO5:Eu phosphor, under single scattering condition, the angular scattering pattern was determined based on the measured radiant powers by detector arrays located at different scattering angles in the LPA, while the relationship between scattering coefficients and phosphor concentrations was obtained by measured obscuration ratios. Ray-tracing simulations were undertaken, employing the measured optical parameters as inputs. The transmittance measurement setup was built based on a goniophotometer, and 3528 commercial white light-emitting diodes (WLEDs) were packaged with the phosphor and silicone in different mixing ratios. The simulated transmittances and spectral power distributions for WLEDs were compared with measurements to verify the effectiveness of the characterized scattering parameters. The developed methodology may be used to optimize phosphors for the color tuning of WLEDs.

Keyword :

packaging light scattering White light-emitting diodes (WLEDs) Monte Carlo ray-tracing phosphor

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Wang, Jiaqi , Lo, Jeffery C. C. , Lee, S. W. Ricky et al. A Novel Approach to Characterize Phosphor Particles for the Color Tuning of WLEDs [J]. | IEEE PHOTONICS TECHNOLOGY LETTERS , 2018 , 30 (6) : 513-516 .
MLA Wang, Jiaqi et al. "A Novel Approach to Characterize Phosphor Particles for the Color Tuning of WLEDs" . | IEEE PHOTONICS TECHNOLOGY LETTERS 30 . 6 (2018) : 513-516 .
APA Wang, Jiaqi , Lo, Jeffery C. C. , Lee, S. W. Ricky , Tao, Mian , Zou, Huayong , Yun, Feng . A Novel Approach to Characterize Phosphor Particles for the Color Tuning of WLEDs . | IEEE PHOTONICS TECHNOLOGY LETTERS , 2018 , 30 (6) , 513-516 .
Export to NoteExpress RIS BibTex
Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth SCIE PubMed Scopus
期刊论文 | 2017 , 7 | SCIENTIFIC REPORTS | IF: 4.122
WoS CC Cited Count: 2
Abstract&Keyword Cite

Abstract :

The fabrication and application of polystyrene (PS)-assisted ITO nanowire (NW) networks are reported. The ITO-NW networks are fabricated by means of electron-beam deposition via PS. This method has the advantages of low-temperature (similar to 300 degrees C), low-cost, facile and efficient operation. The growth mechanism of PS-assisted ITO NWs was analyzed in detail, and the morphology of which could be regulated by the size of PS. X-ray diffraction and high-resolution transmission electron microscope show that the ITO NWs are close to an integral cubic lattice. The transmittance of ITO-NW networks layer is above 90% after 400 nm and the sheet resistance is similar to 200 Omega/square When they applied on vertical blue and green LEDs, the light output power all has been improved similar to 30%. And, the resistive switching behaviors of ITO-NWs were measured and analyzed in Ag/ITO-NW networks/Al capacitor. The application of ITO-NW networks on special morphological devices was discussed. The PS-assisted ITO-NW networks show a strong researching and application value.

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Li, Qiang , Yun, Feng , Li, Yufeng et al. Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth [J]. | SCIENTIFIC REPORTS , 2017 , 7 .
MLA Li, Qiang et al. "Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth" . | SCIENTIFIC REPORTS 7 (2017) .
APA Li, Qiang , Yun, Feng , Li, Yufeng , Ding, Wen , Zhang, Ye . Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth . | SCIENTIFIC REPORTS , 2017 , 7 .
Export to NoteExpress RIS BibTex
Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes EI SCIE Scopus
期刊论文 | 2017 , 56 (6) | JAPANESE JOURNAL OF APPLIED PHYSICS | IF: 1.452
Abstract&Keyword Cite

Abstract :

In this paper, modulating the thickness of quantum barriers (QBs) in gallium nitride (GaN) based light-emitting diodes (LEDs) has been investigated numerically and experimentally. To reveal the underlying mechanism of efficiency droop for LEDs with different QB thicknesses, the dual-wavelength active regions were specially designed. Compare to LEDs with 18-nm-thick QBs and 9-nm-thick QBs, the efficiency droop ratio of the LED with 12-nm-thick QBs is the lowest at the high current density of 80A/cm(2), which indicates that LEDs with medium QB thickness are the best for suppressing efficiency droop. The measured external quantum efficiency (EQE) of the LED with 18-nm-thick QBs is the highest at the low current density of 5A/cm(2), which may result from the lowest leakage current. However, due to the higher hole injection level, the measured EQE results of the LED with 12-nm-thick QBs are higher than the LED with 18-nm-thick QBs at 80A/cm(2). (C) 2017 The Japan Society of Applied Physics

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Zhao, Yukun , Yun, Feng , Wang, Shuai et al. Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes [J]. | JAPANESE JOURNAL OF APPLIED PHYSICS , 2017 , 56 (6) .
MLA Zhao, Yukun et al. "Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes" . | JAPANESE JOURNAL OF APPLIED PHYSICS 56 . 6 (2017) .
APA Zhao, Yukun , Yun, Feng , Wang, Shuai , Feng, Lungang , Su, Xilin , Li, Yufeng et al. Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes . | JAPANESE JOURNAL OF APPLIED PHYSICS , 2017 , 56 (6) .
Export to NoteExpress RIS BibTex
Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs EI SCIE Scopus
期刊论文 | 2017 , 5 , 11712-11716 | IEEE ACCESS | IF: 3.557
WoS CC Cited Count: 1
Abstract&Keyword Cite

Abstract :

In this paper, the improvement of the method measuring the junction temperature of light-emitting diodes (LEDs) has been studied experimentally. A practical method is proposed with only three measurement procedures. With the consideration of indium (In) composition and blue shift, the method has a high applicability, which is practical for the LED chips vary from blue to green chips under different currents, including the packaged chips. On the other hand, according to the experimental and derived results, the junction-temperature difference and peak-wavelength shift in both blue-shift and red-shift fields show similar parabolic-like relations. To simplify the experimental processes, dual-wavelength LEDs were fabricated and measured instead of conventional single-wavelength LEDs.

Keyword :

dual-wavelength light emitting diodes practicability peak-wavelength method Junction temperature

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Zhao, Yukun , Yun, Feng , Feng, Lungang et al. Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs [J]. | IEEE ACCESS , 2017 , 5 : 11712-11716 .
MLA Zhao, Yukun et al. "Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs" . | IEEE ACCESS 5 (2017) : 11712-11716 .
APA Zhao, Yukun , Yun, Feng , Feng, Lungang , Wang, Shuai , Li, Yufeng , Su, Xilin et al. Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs . | IEEE ACCESS , 2017 , 5 , 11712-11716 .
Export to NoteExpress RIS BibTex
Metamaterial study of quasi-three-dimensional bowtie nanoantennas at visible wavelengths SCIE PubMed Scopus
期刊论文 | 2017 , 7 | SCIENTIFIC REPORTS | IF: 4.122
Abstract&Keyword Cite

Abstract :

In this paper, a novel array of quasi-three-dimensional (quasi-3D) bowtie nanoantennas has been investigated numerically and experimentally. A low-cost and facile method has been designed and implemented to fabricate the quasi-3D bowtie nanoantennas. The fabrication processes containing laser patterning and wet etching have demonstrated the advantages of easily tuning the periodic and diameter of microhole arrays. According to the simulated results, the electric and magnetic resonances at visible wavelengths are obtained in the tips and contours of the metamaterials made of the quasi-3D bowtie nanoantennas, respectively. The effects of the size and gap of quasi-3D bowtie nanoantennas on the array performance have also been studied. The underlying mechanism suggests that different electric and magnetic resonant ranges of the metamaterials could contribute to the broad resonant range for the monolithic metamaterials.

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Zhao, Yukun , Yun, Feng , Huang, Yi et al. Metamaterial study of quasi-three-dimensional bowtie nanoantennas at visible wavelengths [J]. | SCIENTIFIC REPORTS , 2017 , 7 .
MLA Zhao, Yukun et al. "Metamaterial study of quasi-three-dimensional bowtie nanoantennas at visible wavelengths" . | SCIENTIFIC REPORTS 7 (2017) .
APA Zhao, Yukun , Yun, Feng , Huang, Yi , Wang, Shuai , Feng, Lungang , Li, Yufeng et al. Metamaterial study of quasi-three-dimensional bowtie nanoantennas at visible wavelengths . | SCIENTIFIC REPORTS , 2017 , 7 .
Export to NoteExpress RIS BibTex
Growth, characterization, and application of well-defined separated GaN-based pyramid array on micropatterned sapphire substrate EI SCIE Scopus
期刊论文 | 2017 , 10 (9) | APPLIED PHYSICS EXPRESS | IF: 2.555
WoS CC Cited Count: 2
Abstract&Keyword Cite

Abstract :

We tried to obtain microstructures on a three-dimensional (3D) micropatterned substrate by laser drilling. The influences of the dimensions of the drilling holes on the morphology and the material quality of the grown structures were studied. Uniform micropyramid arrays with relatively low dislocation density can be achieved by adjusting the laser drilling parameters. The internal quantum efficiency was estimated to be improved by a factor of 3 for a pyramid structure compared with that of planar LEDs. We fabricated 5 x 7 mm(2) flexible LEDs employing the pyramid structure and the devices exhibited good flexibility without performance reduction after bending. (C) 2017 The Japan Society of Applied Physics

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Tian, Zhenhuan , Li, Yufeng , Su, Xilin et al. Growth, characterization, and application of well-defined separated GaN-based pyramid array on micropatterned sapphire substrate [J]. | APPLIED PHYSICS EXPRESS , 2017 , 10 (9) .
MLA Tian, Zhenhuan et al. "Growth, characterization, and application of well-defined separated GaN-based pyramid array on micropatterned sapphire substrate" . | APPLIED PHYSICS EXPRESS 10 . 9 (2017) .
APA Tian, Zhenhuan , Li, Yufeng , Su, Xilin , Feng, Lungang , Wang, Shuai , Zhang, Minyan et al. Growth, characterization, and application of well-defined separated GaN-based pyramid array on micropatterned sapphire substrate . | APPLIED PHYSICS EXPRESS , 2017 , 10 (9) .
Export to NoteExpress RIS BibTex
Controlled synthesis of polystyrene-assisted tin-doped indium oxide nanowire networks EI SCIE Scopus
期刊论文 | 2017 , 32 (9) , 1647-1655 | JOURNAL OF MATERIALS RESEARCH | IF: 1.495
Abstract&Keyword Cite

Abstract :

Polystyrene spheres were found to be an effective assisted material in the growth of indium-tin-oxide (ITO) nanowire networks, bearing low temperature, high purity, and good control of size. The temperature and time of growth were studied to achieve ITO nanowire networks with high transmission and low resistivity. When prepared by PS spheres of 670 nm dia. for 15 min at 300 degrees C, the transmittance is above 90% after the wave length of 400 nm, and the sheet resistance is approximate to 200 /. Polystyrene-assisted ITO nanowires showed the high degree of crystallinity with lattice fringes, and well coincided cubic phase of In2O3. The density of ITO nanowire networks were controlled by polystyrene spheres and the residual polystyrene was removed by thermal annealing. ITO nanowire networks open new opportunities for optoelectronic devices needing special morphology for the improvement of light extraction efficiency, and as a new type of conductive film, which have an even broad application arena.

Keyword :

polystyrene spheres light-emitting diode catalyst indium-tin-oxide nanowires

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Li, Qiang , Feng, Lungang , Wang, Shuai et al. Controlled synthesis of polystyrene-assisted tin-doped indium oxide nanowire networks [J]. | JOURNAL OF MATERIALS RESEARCH , 2017 , 32 (9) : 1647-1655 .
MLA Li, Qiang et al. "Controlled synthesis of polystyrene-assisted tin-doped indium oxide nanowire networks" . | JOURNAL OF MATERIALS RESEARCH 32 . 9 (2017) : 1647-1655 .
APA Li, Qiang , Feng, Lungang , Wang, Shuai , Li, Yu-Feng , Yun, Feng . Controlled synthesis of polystyrene-assisted tin-doped indium oxide nanowire networks . | JOURNAL OF MATERIALS RESEARCH , 2017 , 32 (9) , 1647-1655 .
Export to NoteExpress RIS BibTex
10| 20| 50 per page
< Page ,Total 5 >

Export

Results:

Selected

to

Format:
FAQ| About| Online/Total:806/48857658
Address:XI'AN JIAOTONG UNIVERSITY LIBRARY(No.28, Xianning West Road, Xi'an, Shaanxi Post Code:710049) Contact Us:029-82667865
Copyright:XI'AN JIAOTONG UNIVERSITY LIBRARY Technical Support:Beijing Aegean Software Co., Ltd.