Pentacene　organic　thin-film　transistor　(OTFT)　using　Pd　as　gate　electrode　is　proposed,　with　high-k　LaZrO　as　gate　dielectric.　The　Pd　film　is　prepared　by　e-beam　evaporation　and　then　the　LaZrO　film　is　deposited　by　reactive　sputtering　in　Ar/O-2　ambience　followed　by　an　annealing　in　N-2　at　400　degrees　C.　The　OTFT　achieves　an　obvious　increase　in　carrier　mobility　(to　1.02　cm(2)/V.s),　as　compared　with　its　counterpart　with　heavily-doped　silicon　gate　(0.23　cm(2)/V.s).　Moreover,　both　samples　with　LaZrO　gate　dielectric　show　higher　carrier　mobility　than　a　sample　with　La2O3　gate　dielectric　and　Pd　gate　electrode.