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< Page ,Total 27 >
Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy EI Scopus SCIE
期刊论文 | 2019 , 34 (2) , 1334-1355 | IEEE Transactions on Power Electronics
WoS CC Cited Count: 1 SCOPUS Cited Count: 2
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Abstract :

Balanced issues of neutral-point (NP) voltage in the neutral-point-clamped (NPC) three-level photovoltaic converter have been deeply studied. Numerous algorithms for NP voltage control have been proposed and proven to be effective in normal operations. However, most of previous studies fail to consider effect of imbalanced loads on NP voltage, especially under low-voltage-ride-through (LVRT) condition, which faces problems of imbalanced grid voltages and low power factor. In this paper, through derivation of NP current model for different loading conditions, the behavior of NP voltage under LVRT condition is comprehensively analyzed for the first time. Then, theoretical limitations of NP voltage control based on two common space-vector-pulse-width modulations (SVPWM) that three-nearest-vectors and symmetric SVPWM are investigated, and additional low-frequency oscillation in NP voltage is analyzed. This oscillation is dominated by fundamental frequency and has different generation mechanisms under different imbalanced grid faults. Then, a novel method of selective hybrid SVPWM, as selective combinations of SVPWM and virtual SVPWM according to different imbalanced grid faults, is proposed to effectively suppress NP voltage oscillations in LVRT operation without any complex improvements and increase of DC-link capacitor values. Finally, the analytical result and performance of proposed method are confirmed in an existing 300kW NPC converter. IEEE

Keyword :

Low voltage ride through (LVRT) Neutral point clamped Neutral-point voltage balances Photovoltaic converter Space vector pulse width modulation

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GB/T 7714 Li, Yang , Yang, Xu , Chen, Wenjie et al. Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy [J]. | IEEE Transactions on Power Electronics , 2019 , 34 (2) : 1334-1355 .
MLA Li, Yang et al. "Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy" . | IEEE Transactions on Power Electronics 34 . 2 (2019) : 1334-1355 .
APA Li, Yang , Yang, Xu , Chen, Wenjie , Liu, Tao , Zhang, Feng . Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy . | IEEE Transactions on Power Electronics , 2019 , 34 (2) , 1334-1355 .
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Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit EI Scopus SCIE
期刊论文 | 2019 , 34 (4) , 3711-3728 | IEEE Transactions on Power Electronics
WoS CC Cited Count: 3 SCOPUS Cited Count: 2
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Abstract :

Commercially available normally-off GaN power HEMT devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction and a p-GaN/AlGaN/GaN heterojunction. With drain voltage changing during a switching process, the variation of net charge in the floating p-GaN layer would cause instability in threshold voltage. Besides, the gate-related junction capacitances would exhibit behavior different from those of a Si MOSFET. Consequently, the switching transient performance of a GaN transistor with a p-GaN gate could be significantly influenced by the aforementioned factors. In this work, the threshold voltage instability associated with the drain-to-gate voltage stress is firstly analyzed. Despite the difficulties in directly performing capacitance measurements inside the device structure, a hybrid physical-behavior modeling method is proposed. The model is capable of extracting the capacitance-bias relationships with regard to the gate region from static terminal measurements. In previous works, the advanced analytical model would make modest change on Si MOSFET's model. As a result, the simulated waveforms would exhibit 20 <formula><tex>$\times$</tex></formula> 50% discrepancy from experiment. In contrast, the proposed switching transient analytical approach would exhibit improved accuracy. Consequently, the switching transient performance of GaN transistor with p-GaN gate could be more accurately evaluated. IEEE

Keyword :

Analytical approach GaN HEMTs Junction capacitances Physical behaviors Schottky junctions Switching transient Terminal measurements Threshold-voltage instabilities

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GB/T 7714 Xie, Ruiliang , Yang, Xu , Xu, Guangzhao et al. Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit [J]. | IEEE Transactions on Power Electronics , 2019 , 34 (4) : 3711-3728 .
MLA Xie, Ruiliang et al. "Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit" . | IEEE Transactions on Power Electronics 34 . 4 (2019) : 3711-3728 .
APA Xie, Ruiliang , Yang, Xu , Xu, Guangzhao , Wei, Jin , Wang, Yuru , Wang, Hanxing et al. Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit . | IEEE Transactions on Power Electronics , 2019 , 34 (4) , 3711-3728 .
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Modeling and Simulation on Overall-train EMI of China Standardized High-speed Train EI CPCI-S Scopus
会议论文 | 2018 , 953-955 | Joint 60th IEEE International Symposium on Electromagnetic Compatibility (EMC) / IEEE Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC)
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Abstract :

With the development of China high-speed train technology, high-speed train has entered the mass production stage nowadays. But the EMI control technology for the assembled overall-train is immature, and the EMI mechanism of the overall-train is not clear enough as well. In this paper, the EMI control is not ideal after assembly of China standardized high-speed train, and this paper studies the EMI mechanism of the train. An EMI model for high-speed train has been established. The model which have direct meaning to the EMI problem in the present stage of the standardized train group can be predict the EMI characteristics of the overall-train accurately.

Keyword :

field test EMI EMI model standardized high-speed train simulation verification

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GB/T 7714 Ji, Junpeng , Liu, Yikun , Chen, Wenjie et al. Modeling and Simulation on Overall-train EMI of China Standardized High-speed Train [C] . 2018 : 953-955 .
MLA Ji, Junpeng et al. "Modeling and Simulation on Overall-train EMI of China Standardized High-speed Train" . (2018) : 953-955 .
APA Ji, Junpeng , Liu, Yikun , Chen, Wenjie , Li, Jingang , Yang, Xu . Modeling and Simulation on Overall-train EMI of China Standardized High-speed Train . (2018) : 953-955 .
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A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode EI CPCI-S Scopus
会议论文 | 2018 , 276-279 | 33nd Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
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Abstract :

A fast Thvenin equivalent model for IGBT considering the dynamic performance of both IGBT and antiparallel diode based on datasheet is proposed to increase the efficiency of power electronics transient simulation. In this paper, the conducting details of an IGBT with antiparallel diode switch are represented by a fixed topology equivalent: a voltage source in series with a constant resistance. For the first time, three devices are intergrated inside one model, and the conducting device is dynamically alternative among three statuses: IGBT, diode and open circuit, reflected in the changeable voltage source. So unchangeable admittance matrix is gained despite of the variation of conducting devices, which tremendously accelerates the calculation. A single phase half-bridge inverter circuit is tested applying the proposed model, and its accuracy and efficiency are validated.

Keyword :

IGBT power electronics Thevenin equivalent fixed topology modelling

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GB/T 7714 Zhang, Feng , Yang, Xu , Xue, Wei et al. A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode [C] . 2018 : 276-279 .
MLA Zhang, Feng et al. "A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode" . (2018) : 276-279 .
APA Zhang, Feng , Yang, Xu , Xue, Wei , Xie, Ruiliang , Li, Yang , Sha, Yilin . A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode . (2018) : 276-279 .
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Start-up scheme for dual-active-bridge based 10kV power electronics transformer in PV application CPCI-S
会议论文 | 2018 , 7083-7087 | 10th IEEE Annual Energy Conversion Congress and Exposition (ECCE)
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Abstract :

A start-up scheme is presented for 10kV power electronics transformer composed of dual-active-bridge (DAB) and H-bridge. This paper firstly presents the 10kV power electronics transformer (PET) system control strategy as well as the controller structure including main controller and modular controller. Then, the start-up scheme is introduced both in systematic level and DAB converter level. This start-up scheme not only eliminates the soft-start equipment in traditional 10kV grid-connected converter but also maintain low inrush current for both DAB and H-bridge in the whole process. Finally, 10kV/1MW prototype is introduced and the experiment to verify the start-up scheme is presented.

Keyword :

dual active bridge power electronics transformer start-up inrush current

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GB/T 7714 Liu, Tao , Xuan, Yang , Li, Yang et al. Start-up scheme for dual-active-bridge based 10kV power electronics transformer in PV application [C] . 2018 : 7083-7087 .
MLA Liu, Tao et al. "Start-up scheme for dual-active-bridge based 10kV power electronics transformer in PV application" . (2018) : 7083-7087 .
APA Liu, Tao , Xuan, Yang , Li, Yang , Huang, Lang , Xu, Yang , Chen, Wenjie et al. Start-up scheme for dual-active-bridge based 10kV power electronics transformer in PV application . (2018) : 7083-7087 .
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A Passive Component Based Gate Drive Scheme for Negative Gate Voltage Spike Mitigation in a SiC-Based Dual-Active Bridge CPCI-S
会议论文 | 2018 , 1841-1845 | 10th IEEE Annual Energy Conversion Congress and Exposition (ECCE)
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Abstract :

This paper introduces a simple and reliable gate drive scheme which could effectively solve the negative voltage undershoot at the gate terminal of SiC device during the turnoff process of the Dual-Active Bridge (DAB) topology. Through inserting a diode and a magnetic bead into the classic gate drive circuit, the drive scheme could be formed. The operating principles of the proposed drive scheme could be divided into four stages and described in details, in consideration of the complementary switch in the phase-leg as well as the diode in the gate drive circuit. The effectiveness of the proposed gate drive circuit could be validated on a SiC-based double pulse tester under the working condition of DAB. The main contribution of this work is that the proposed scheme would largely improve the capability of the passive gate driver on the mitigation of the negative gate spike. Based on the simple structure and passive component's reliable performance, the proposed gate drive scheme could be directly adopted to DAB. The design guideline is also proposed, where the gate voltage spike could be controlled through the adjustment of magnetic bead's impedance.

Keyword :

Gate drive scheme Negative gate voltage spike Magnetic bead SiC MOSFET

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GB/T 7714 Tian, Yidong , Yang, Xu , Xie, Ruiliang et al. A Passive Component Based Gate Drive Scheme for Negative Gate Voltage Spike Mitigation in a SiC-Based Dual-Active Bridge [C] . 2018 : 1841-1845 .
MLA Tian, Yidong et al. "A Passive Component Based Gate Drive Scheme for Negative Gate Voltage Spike Mitigation in a SiC-Based Dual-Active Bridge" . (2018) : 1841-1845 .
APA Tian, Yidong , Yang, Xu , Xie, Ruiliang , Huang, Lang , Liu, Tao , Wang, Jianpeng et al. A Passive Component Based Gate Drive Scheme for Negative Gate Voltage Spike Mitigation in a SiC-Based Dual-Active Bridge . (2018) : 1841-1845 .
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Wireless Power Transfer: Critical Review of Related Standards CPCI-S
会议论文 | 2018 , 1062-1066 | 8th International Power Electronics Conference (IPEC-Niigata ECCE Asia)
WoS CC Cited Count: 1
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Abstract :

Wireless power transfer system (WPT) turned to be a reliable and an appropriate strategy, which found many applications. However, there is a growing concern about two safety issues. The first one is linked to the human exposure to electromagnetic fields (EMFs) that may cause potential health hazards. The second issue is the electromagnetic compatibility (EMC), where WPT systems may cause disturbance to electrical circuits. With the rapid development of WPT systems including the wide range of frequency and power, many leading countries in WPT industry have set many standards and regulations for safety usage of WPT. However, due to the complexity and variety of these standards, it is usually difficult to follow for both researchers and electrical engineers. This paper aims to provide a review for the recent standards and regulations concerning WPT industry and its applications. Therefore, a simple classification with a comprehensive comparison is presented.

Keyword :

EMI standards electromagnetic fields wireless power transfer Electromagnetic compatibility

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GB/T 7714 Abou Houran, Mohamad , Yang, Xu , Chen, Wenjie et al. Wireless Power Transfer: Critical Review of Related Standards [C] . 2018 : 1062-1066 .
MLA Abou Houran, Mohamad et al. "Wireless Power Transfer: Critical Review of Related Standards" . (2018) : 1062-1066 .
APA Abou Houran, Mohamad , Yang, Xu , Chen, Wenjie , Samizadeh, Mehdi . Wireless Power Transfer: Critical Review of Related Standards . (2018) : 1062-1066 .
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A fixed topology Thevenin equivalent integral model for modular multilevel converters EI SCIE Scopus
期刊论文 | 2018 , 28 (3) | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS
SCOPUS Cited Count: 1
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Abstract :

The Thevenin equivalent model for half-bridge modular multilevel converters on electromagnetic transient simulation, applying 2-state resistances to represent switches and adopting Dommel's algorithm to get a discretized capacitance in each submodule, achieves good central processing unit time saving while maintaining the identity of every submodule. But the large number of changeable resistances still brings a computational challenge for simulation efficiency, because the admittance matrix gets an equaled size to the amount of nodes, and inverts (re-triangularizes) each time when a switch performs. This paper presents a novel fixed topology Thevenin equivalent half-bridge modular multilevel converter integral model and simplifies its mathematical expression markedly. The choice of integration methods is also performed by discussion of the stability, and backward Euler algorithm is selected for further speedup. Basically, it achieves speedup by (1) the use of novel Thevenin equivalent model to achieve unchangeable admittance matrix while regarding the switches as excitations; (2) merging the elements (inductances, resistances, and submodules) in the arm of modular multilevel converter by Thevenin equivalent to reduce the order of admittance matrix; (3) simplifying the mathematica expression of sub module by Thevenin equivalent and omitting the small resistance; and (4) the use of backward Euler algorithm to discretize all the elements (capacitances, inductances, resistances, and submodules) in the circuit for a better convergence speed and larger speedup factor. The model is implemented in a 3-phase grid-connected modular multilevel converter circuit; the results show that the proposed Thevenin equivalent integral model makes a good accuracy on simulating the performances of the half-bridge modular multilevel converter with drastically reduced computational time.

Keyword :

stability electromagnetic transients (EMT) power electronics Thevenin equivalent modular multilevel converter (MMC)

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GB/T 7714 Zhang, Feng , Yang, Xu , Huang, Lang et al. A fixed topology Thevenin equivalent integral model for modular multilevel converters [J]. | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS , 2018 , 28 (3) .
MLA Zhang, Feng et al. "A fixed topology Thevenin equivalent integral model for modular multilevel converters" . | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS 28 . 3 (2018) .
APA Zhang, Feng , Yang, Xu , Huang, Lang , Wang, Kangping , Xu, Guangzhao , Li, Yang et al. A fixed topology Thevenin equivalent integral model for modular multilevel converters . | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS , 2018 , 28 (3) .
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Energy Management of Microgrid in Smart Building Considering Air Temperature Impact EI CPCI-S Scopus
会议论文 | 2018 , 2398-2404 | 33nd Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
WoS CC Cited Count: 2 SCOPUS Cited Count: 2
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Abstract :

The economic dispatch is based on finding the optimal combination of all the energy resources of the microgrid. In this paper, a smart building microgrid model is supplied by diesel generators, PV, energy storage system (ESS), and main grid. The objective of this paper is to manage the generation resources which operate over a time horizon while satisfying many key constraints in low cost. In order to achieve better energy efficiency in the building, this paper proposed an improved energy management operation. In the proposed operation, the economic dispatch operation ED is presented according to such aspects as air temperature impact, the resistance of building shell, time horizon and so on. The accuracy and feasibility of the proposed energy management operation has been validated by GAMS simulation results.

Keyword :

economic dispatch Smart building microgrid Air temperature impact

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GB/T 7714 Abou Houran, Mohamad , Yang, Xu , Chen, Wenjie . Energy Management of Microgrid in Smart Building Considering Air Temperature Impact [C] . 2018 : 2398-2404 .
MLA Abou Houran, Mohamad et al. "Energy Management of Microgrid in Smart Building Considering Air Temperature Impact" . (2018) : 2398-2404 .
APA Abou Houran, Mohamad , Yang, Xu , Chen, Wenjie . Energy Management of Microgrid in Smart Building Considering Air Temperature Impact . (2018) : 2398-2404 .
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Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs EI SCIE Scopus
期刊论文 | 2018 , 33 (5) , 3802-3815 | IEEE TRANSACTIONS ON POWER ELECTRONICS
WoS CC Cited Count: 5 SCOPUS Cited Count: 5
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Abstract :

This paper presents a new active gate drive (AGD) for switching performance improvement and overvoltage protection of high-power insulated gate bipolar transistors (IGBTs). In addition to the conventional gate drive (CGD) based on fixed voltage sources and fixed gate drive resistors, the proposed AGD has a complementary current source to provide extra gate drive current into the gate. Specific transient switching stages of the IGBT can be therefore accelerated, leading to higher switching speed and lower switching loss of the IGBT. Additionally, the turn-off voltage overshoot of the IGBT can be controlled at a preset reference value with a fast closed-loop overvoltage protection circuit. Moreover, the switching speed of the IGBT, including the turn-on/off delay times and the turn-on/off voltage slopes, can be effectively regulated with an adaptive switching speed control method. Accordingly, the gate drive is capable of operating the IGBT at specified delay times and fixed voltage slopes when varying the switching conditions (e.g., temperature, load current). The operation principle of the proposed AGD and control concept are presented. By comparing with the CGD, the proposed method is experimentally verified on a 3.3 kV/1.5 kA IGBT module in both double-pulse and multipulse tests.

Keyword :

Active gate drive (AGD) adaptive feedback control insulated gate bipolar transistors (IGBTs) overvoltage protection switching loss

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GB/T 7714 Zhang, Fan , Yang, Xu , Ren, Yu et al. Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (5) : 3802-3815 .
MLA Zhang, Fan et al. "Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 5 (2018) : 3802-3815 .
APA Zhang, Fan , Yang, Xu , Ren, Yu , Feng, Lei , Chen, Wenjie , Pei, Yunqing . Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (5) , 3802-3815 .
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