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< Page ,Total 27 >
Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy EI Scopus SCIE
期刊论文 | 2019 , 34 (2) , 1334-1355 | IEEE Transactions on Power Electronics
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Abstract :

Balanced issues of neutral-point (NP) voltage in the neutral-point-clamped (NPC) three-level photovoltaic converter have been deeply studied. Numerous algorithms for NP voltage control have been proposed and proven to be effective in normal operations. However, most of previous studies fail to consider effect of imbalanced loads on NP voltage, especially under low-voltage-ride-through (LVRT) condition, which faces problems of imbalanced grid voltages and low power factor. In this paper, through derivation of NP current model for different loading conditions, the behavior of NP voltage under LVRT condition is comprehensively analyzed for the first time. Then, theoretical limitations of NP voltage control based on two common space-vector-pulse-width modulations (SVPWM) that three-nearest-vectors and symmetric SVPWM are investigated, and additional low-frequency oscillation in NP voltage is analyzed. This oscillation is dominated by fundamental frequency and has different generation mechanisms under different imbalanced grid faults. Then, a novel method of selective hybrid SVPWM, as selective combinations of SVPWM and virtual SVPWM according to different imbalanced grid faults, is proposed to effectively suppress NP voltage oscillations in LVRT operation without any complex improvements and increase of DC-link capacitor values. Finally, the analytical result and performance of proposed method are confirmed in an existing 300kW NPC converter. IEEE

Keyword :

Low voltage ride through (LVRT) Neutral point clamped Neutral-point voltage balances Photovoltaic converter Space vector pulse width modulation

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GB/T 7714 Li, Yang , Yang, Xu , Chen, Wenjie et al. Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy [J]. | IEEE Transactions on Power Electronics , 2019 , 34 (2) : 1334-1355 .
MLA Li, Yang et al. "Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy" . | IEEE Transactions on Power Electronics 34 . 2 (2019) : 1334-1355 .
APA Li, Yang , Yang, Xu , Chen, Wenjie , Liu, Tao , Zhang, Feng . Neutral-Point Voltage Analysis and Suppression for NPC Three-Level Photovoltaic Converter in LVRT Operation under Imbalanced Grid Faults with Selective Hybrid SVPWM Strategy . | IEEE Transactions on Power Electronics , 2019 , 34 (2) , 1334-1355 .
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Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit EI Scopus
期刊论文 | 2018 | IEEE Transactions on Power Electronics
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Abstract :

Commercially available normally-off GaN power HEMT devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction and a p-GaN/AlGaN/GaN heterojunction. With drain voltage changing during a switching process, the variation of net charge in the floating p-GaN layer would cause instability in threshold voltage. Besides, the gate-related junction capacitances would exhibit behavior different from those of a Si MOSFET. Consequently, the switching transient performance of a GaN transistor with a p-GaN gate could be significantly influenced by the aforementioned factors. In this work, the threshold voltage instability associated with the drain-to-gate voltage stress is firstly analyzed. Despite the difficulties in directly performing capacitance measurements inside the device structure, a hybrid physical-behavior modeling method is proposed. The model is capable of extracting the capacitance-bias relationships with regard to the gate region from static terminal measurements. In previous works, the advanced analytical model would make modest change on Si MOSFET's model. As a result, the simulated waveforms would exhibit 20 <formula><tex>$\times$</tex></formula> 50% discrepancy from experiment. In contrast, the proposed switching transient analytical approach would exhibit improved accuracy. Consequently, the switching transient performance of GaN transistor with p-GaN gate could be more accurately evaluated. IEEE

Keyword :

Analytical approach GaN HEMTs Junction capacitances Physical behaviors Schottky junctions Switching transient Terminal measurements Threshold-voltage instabilities

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GB/T 7714 Xie, Ruiliang , Yang, Xu , Xu, Guangzhao et al. Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit [J]. | IEEE Transactions on Power Electronics , 2018 .
MLA Xie, Ruiliang et al. "Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit" . | IEEE Transactions on Power Electronics (2018) .
APA Xie, Ruiliang , Yang, Xu , Xu, Guangzhao , Wei, Jin , Wang, Yuru , Wang, Hanxing et al. Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit . | IEEE Transactions on Power Electronics , 2018 .
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A Passive Component Based Gate Drive Scheme for Negative Gate Voltage Spike Mitigation in a SiC-Based Dual-Active Bridge CPCI-S
会议论文 | 2018 , 1841-1845 | 10th IEEE Annual Energy Conversion Congress and Exposition (ECCE)
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Abstract :

This paper introduces a simple and reliable gate drive scheme which could effectively solve the negative voltage undershoot at the gate terminal of SiC device during the turnoff process of the Dual-Active Bridge (DAB) topology. Through inserting a diode and a magnetic bead into the classic gate drive circuit, the drive scheme could be formed. The operating principles of the proposed drive scheme could be divided into four stages and described in details, in consideration of the complementary switch in the phase-leg as well as the diode in the gate drive circuit. The effectiveness of the proposed gate drive circuit could be validated on a SiC-based double pulse tester under the working condition of DAB. The main contribution of this work is that the proposed scheme would largely improve the capability of the passive gate driver on the mitigation of the negative gate spike. Based on the simple structure and passive component's reliable performance, the proposed gate drive scheme could be directly adopted to DAB. The design guideline is also proposed, where the gate voltage spike could be controlled through the adjustment of magnetic bead's impedance.

Keyword :

Gate drive scheme Negative gate voltage spike Magnetic bead SiC MOSFET

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GB/T 7714 Tian, Yidong , Yang, Xu , Xie, Ruiliang et al. A Passive Component Based Gate Drive Scheme for Negative Gate Voltage Spike Mitigation in a SiC-Based Dual-Active Bridge [C] . 2018 : 1841-1845 .
MLA Tian, Yidong et al. "A Passive Component Based Gate Drive Scheme for Negative Gate Voltage Spike Mitigation in a SiC-Based Dual-Active Bridge" . (2018) : 1841-1845 .
APA Tian, Yidong , Yang, Xu , Xie, Ruiliang , Huang, Lang , Liu, Tao , Wang, Jianpeng et al. A Passive Component Based Gate Drive Scheme for Negative Gate Voltage Spike Mitigation in a SiC-Based Dual-Active Bridge . (2018) : 1841-1845 .
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Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs EI SCIE Scopus
期刊论文 | 2018 , 33 (7) , 5995-6011 | IEEE TRANSACTIONS ON POWER ELECTRONICS
WoS CC Cited Count: 1 SCOPUS Cited Count: 1
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Abstract :

A 4000-V-ultrahigh-input voltage-switched-mode power supply (UHV-SMPS) using series-connected MOSFETs is designed in this paper. The main contributions of the proposed scheme include the common-mode interference modeling of the multiswitch structure, voltage balance of the switches and driving method. First, the common-mode interference of UHV-SMPS is evaluated by a high-frequency equivalent model of the proposed scheme. Then, a detailed multiswitch common-mode electromagnetic interference mathematical model is derived and the interference quantity is calculated according to the coupling of series-connected switches. Second, a new mathematical regulation for passive snubber circuit is proposed to realize input voltage balance. Through the regularity of the equivalent parasitic capacitances, the design of compensatory capacitance and voltage balance can realized with ease. Third, a novel driving method based on integrated pulse transformer is proposed. It can achieve both good consistency to the gate signals of MOSFETs and ultrahigh isolation voltage in the wide range input applications. Finally, the experimental results obtained from a 300-4000 V wide range input prototype verified the feasibility of the proposed scheme and accuracy of the theoretical analysis.

Keyword :

ultrahigh input Common-mode (CM) interference voltage balance series connected

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GB/T 7714 Chen, Xiliang , Chen, Wenjie , Yang, Xu et al. Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (7) : 5995-6011 .
MLA Chen, Xiliang et al. "Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 7 (2018) : 5995-6011 .
APA Chen, Xiliang , Chen, Wenjie , Yang, Xu , Han, Yaqiang , Hao, Xiang , Xiao, Tianluan . Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (7) , 5995-6011 .
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A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices EI SCIE Scopus
期刊论文 | 2018 , 33 (7) , 6199-6210 | IEEE TRANSACTIONS ON POWER ELECTRONICS
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Abstract :

Gallium nitride (GaN) devices are suitable for high-frequency power converters due to their excellent switching performance. To maximize the performance of GaN devices, it is necessary to study the switching characteristics, which requires measuring the switching current. However, GaN devices have a fast switching speed and are sensitive to parasitic parameters, so the current measurement should have a high bandwidth and should not introduce excessive parasitic inductance into the power converters. Traditional current measurements are difficult to meet these requirements, especially for fast GaN devices. This paper presents a high-bandwidth integrated current measurement for detecting the switching current of fast GaN devices. By effectively utilizing the parasitic inductance in the circuit, a single-turn coil is embedded in the printed circuit board. This coil could pick up a sufficiently strong voltage signal, which is then processed to reconstruct the switching current. Moreover, corrections are carried out to further improve the accuracy. The current measurement has a small insertion impedance and a high bandwidth with a small influence on the parasitic inductance of the converter. The accuracy of the current measurement is experimentally verified by a 40 V GaN-based double pulse test circuit with a load current up to 25 A.

Keyword :

Current measurement double pulse test circuit gallium nitride (GaN) high bandwidth parasitic inductance

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GB/T 7714 Wang, Kangping , Yang, Xu , Li, Hongchang et al. A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (7) : 6199-6210 .
MLA Wang, Kangping et al. "A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 7 (2018) : 6199-6210 .
APA Wang, Kangping , Yang, Xu , Li, Hongchang , Wang, Laili , Jain, Praveen . A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (7) , 6199-6210 .
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Modeling the Gate Driver IC for GaN Transistor: A Black-Box Approach EI CPCI-S Scopus
会议论文 | 2018 , 2900-2904 | 33nd Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
WoS CC Cited Count: 1 SCOPUS Cited Count: 1
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Abstract :

During the switching performance evaluation for Si-based power devices, the gate driver IC's are commonly neglected because of Si device's slow switching speed. GaN transistors, with much smaller intrinsic capacitances, would enable faster switching speed and higher switching frequency. Consequently, the gate driver would largely impact the switching performance as well as the dead-time of the GaN transistor. In previous works, however, the gate driver IC used to drive GaN transistor have been ignored in circuit simulation, leading to lower modeling accuracy. In consideration of the lack of gate driver IC's critical design parameters, along with less familiarity of power electronics engineer/researcher with the semiconductor technologies, the gate driver IC could be regarded as a "black-box". Despite the difficulty in directly performing measurements inside the driver chip package, a black-box modeling method could be proposed. Based on the measured terminal current/voltage signals in a typical gate drive scheme, the I-V characteristics of the PMOS in the totem-pole topology could be extracted. With respect to the C-V curves, the characteristics of a discrete Si MOSFET with comparable voltage/current rating could be introduced. Taking into account the operating principle of the totem-pole topology, a circuit-level model could be established. Consequently, the simulated waveforms are in reasonable agreements with the testing results. Taking advantages of the proposed black-box modeling method, the switching transient waveforms as well as the dead-time of GaN transistor could be more accurately evaluated.

Keyword :

gate driver IC modeling black-box approach GaN transistor

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GB/T 7714 Xie, Ruiliang , Xu, Guangzhao , Yang, Xu et al. Modeling the Gate Driver IC for GaN Transistor: A Black-Box Approach [C] . 2018 : 2900-2904 .
MLA Xie, Ruiliang et al. "Modeling the Gate Driver IC for GaN Transistor: A Black-Box Approach" . (2018) : 2900-2904 .
APA Xie, Ruiliang , Xu, Guangzhao , Yang, Xu , Tang, Gaofei , Wei, Jin , Tian, Yidong et al. Modeling the Gate Driver IC for GaN Transistor: A Black-Box Approach . (2018) : 2900-2904 .
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Energy Management of Microgrid in Smart Building Considering Air Temperature Impact EI CPCI-S Scopus
会议论文 | 2018 , 2398-2404 | 33nd Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
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Abstract :

The economic dispatch is based on finding the optimal combination of all the energy resources of the microgrid. In this paper, a smart building microgrid model is supplied by diesel generators, PV, energy storage system (ESS), and main grid. The objective of this paper is to manage the generation resources which operate over a time horizon while satisfying many key constraints in low cost. In order to achieve better energy efficiency in the building, this paper proposed an improved energy management operation. In the proposed operation, the economic dispatch operation ED is presented according to such aspects as air temperature impact, the resistance of building shell, time horizon and so on. The accuracy and feasibility of the proposed energy management operation has been validated by GAMS simulation results.

Keyword :

economic dispatch Smart building microgrid Air temperature impact

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GB/T 7714 Abou Houran, Mohamad , Yang, Xu , Chen, Wenjie . Energy Management of Microgrid in Smart Building Considering Air Temperature Impact [C] . 2018 : 2398-2404 .
MLA Abou Houran, Mohamad et al. "Energy Management of Microgrid in Smart Building Considering Air Temperature Impact" . (2018) : 2398-2404 .
APA Abou Houran, Mohamad , Yang, Xu , Chen, Wenjie . Energy Management of Microgrid in Smart Building Considering Air Temperature Impact . (2018) : 2398-2404 .
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Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits EI SCIE Scopus
期刊论文 | 2018 , 33 (2) , 1585-1596 | IEEE TRANSACTIONS ON POWER ELECTRONICS
WoS CC Cited Count: 1 SCOPUS Cited Count: 2
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Abstract :

This paper analyzes the problem of instability in enhancement-mode gallium nitride (GaN) transistors based half-bridge circuits. The instability may cause sustained oscillation, resulting in overvoltage, excessive electromagnetic interference (EMI), and even device breakdown. GaN devices operate in the saturation region when they conduct reversely during the dead time. Under the influence of parasitic parameters, the GaN-based half-bridge circuit exhibits positive feedback under certain conditions, thus, resulting in sustained oscillation. A small-signal model is proposed to study this positive feedback phenomenon. Like the second-order under-damped system, damping ratio is defined to determine the system's stability. Based on the model, the influence of circuit parameters on instability is investigated and guidelines to suppress the oscillation are given. Reducing the common-source inductance, increasing the gate resistance of the inactive switch or connecting a diode in parallel to the inactive switch are some effective ways to suppress the oscillation. Finally, the analyses are verified by both simulation and experiment.

Keyword :

sustained oscillation Gallium nitride (GaN) parasitic reverse conduction positive feed-back

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GB/T 7714 Wang, Kangping , Yang, Xu , Wang, Laili et al. Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (2) : 1585-1596 .
MLA Wang, Kangping et al. "Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 2 (2018) : 1585-1596 .
APA Wang, Kangping , Yang, Xu , Wang, Laili , Jain, Praveen . Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (2) , 1585-1596 .
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A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode EI CPCI-S Scopus
会议论文 | 2018 , 276-279 | 33nd Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
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A fast Thvenin equivalent model for IGBT considering the dynamic performance of both IGBT and antiparallel diode based on datasheet is proposed to increase the efficiency of power electronics transient simulation. In this paper, the conducting details of an IGBT with antiparallel diode switch are represented by a fixed topology equivalent: a voltage source in series with a constant resistance. For the first time, three devices are intergrated inside one model, and the conducting device is dynamically alternative among three statuses: IGBT, diode and open circuit, reflected in the changeable voltage source. So unchangeable admittance matrix is gained despite of the variation of conducting devices, which tremendously accelerates the calculation. A single phase half-bridge inverter circuit is tested applying the proposed model, and its accuracy and efficiency are validated.

Keyword :

IGBT power electronics Thevenin equivalent fixed topology modelling

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GB/T 7714 Zhang, Feng , Yang, Xu , Xue, Wei et al. A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode [C] . 2018 : 276-279 .
MLA Zhang, Feng et al. "A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode" . (2018) : 276-279 .
APA Zhang, Feng , Yang, Xu , Xue, Wei , Xie, Ruiliang , Li, Yang , Sha, Yilin . A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode . (2018) : 276-279 .
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Start-up scheme for dual-active-bridge based 10kV power electronics transformer in PV application CPCI-S
会议论文 | 2018 , 7083-7087 | 10th IEEE Annual Energy Conversion Congress and Exposition (ECCE)
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Abstract :

A start-up scheme is presented for 10kV power electronics transformer composed of dual-active-bridge (DAB) and H-bridge. This paper firstly presents the 10kV power electronics transformer (PET) system control strategy as well as the controller structure including main controller and modular controller. Then, the start-up scheme is introduced both in systematic level and DAB converter level. This start-up scheme not only eliminates the soft-start equipment in traditional 10kV grid-connected converter but also maintain low inrush current for both DAB and H-bridge in the whole process. Finally, 10kV/1MW prototype is introduced and the experiment to verify the start-up scheme is presented.

Keyword :

dual active bridge power electronics transformer start-up inrush current

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GB/T 7714 Liu, Tao , Xuan, Yang , Li, Yang et al. Start-up scheme for dual-active-bridge based 10kV power electronics transformer in PV application [C] . 2018 : 7083-7087 .
MLA Liu, Tao et al. "Start-up scheme for dual-active-bridge based 10kV power electronics transformer in PV application" . (2018) : 7083-7087 .
APA Liu, Tao , Xuan, Yang , Li, Yang , Huang, Lang , Xu, Yang , Chen, Wenjie et al. Start-up scheme for dual-active-bridge based 10kV power electronics transformer in PV application . (2018) : 7083-7087 .
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