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学者姓名:李虞锋

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Phase transition and bandgap engineering in B1-xAlxN alloys: DFT calculations and experiments EI
期刊论文 | 2022 , 575 | Applied Surface Science
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Abstract :

BAlN is a promising ultrawide bandgap semiconductor, but systematic studies of its bandgap are scarce. Here, bandgap engineering of BAlN containing the phase transition factor (from hexagonal to wurtzite structures) has been investigated by DFT calculations and verified experimentally. The calculated bandgap bowing parameter of hexagonal BAlN (h-BAlN) is 2.29 eV, while the bandgap bowing parameters of wurtzite BAlN (w-BAlN) are −4.09 eV and 2.48 eV in the B-rich and Al-rich regions, respectively. Meanwhile, calculations indicate that BAlN preferentially forms w-BAlN at Al composition above 18.7%. So, the bandgap variation of BAlN is divided into three regions based on Al composition: h-BAlN (0–18.7%), B-rich w-BAlN (18.7%–50%), Al-rich w-BAlN (50%–1), and each has its own trend. Experimentally, h-BAlN and w-BAlN films were prepared by magnetron co-sputtering technique and the phase transition was observed in X-ray diffraction (XRD) patterns. h-BAlN shows a typical triangular morphology and the Raman and XRD peaks are located at 1371 cm−1 and 44.3°, tending to (1 0 1) h-BN. w-BAlN has a 'needle-felt' surface with Raman and XRD peaks at 656 cm−1 and 35.9°, tending to (0 0 2) w-AlN. The experimental bandgap variation of BAlN shows a 'W' shape, which can be well explained by the calculation results. © 2021

Keyword :

Morphology Boron nitride Aluminum nitride III-V semiconductors X ray diffraction Energy gap Nitrides Aluminum Density functional theory Zinc sulfide

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GB/T 7714 Zhang, Qifan , Li, Qiang , Zhang, Weihan et al. Phase transition and bandgap engineering in B1-xAlxN alloys: DFT calculations and experiments [J]. | Applied Surface Science , 2022 , 575 .
MLA Zhang, Qifan et al. "Phase transition and bandgap engineering in B1-xAlxN alloys: DFT calculations and experiments" . | Applied Surface Science 575 (2022) .
APA Zhang, Qifan , Li, Qiang , Zhang, Weihan , Zhang, Haoran , Zheng, Feng , Zhang, Mingyin et al. Phase transition and bandgap engineering in B1-xAlxN alloys: DFT calculations and experiments . | Applied Surface Science , 2022 , 575 .
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Completely merged multi-color asymmetric pyramid with suppressed stress and defect density EI SCIE
期刊论文 | 2021 , 570 | JOURNAL OF CRYSTAL GROWTH
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The selective area growth (SAG) technique enables the creation of multi-color micro-structures. However, the substrate pattern to obtain multi-color and mass transfer of these micro-structures are complicated to achieve. Moreover, high dislocation density as well as large residual stress in c-plane quantum wells still remain challenges. Here, an improved SAG strategy was proposed to achieve completely merged asymmetric pyramids on closely connected deep-concave holes via the lateral overgrowth of adjacent pyramids. These asymmetric pyramids were directly grown on the sapphire substrate, making mass transfer be possible. Growth rate distinction appears at the different positions of the overgrowth region, resulting in a multi-wavelength emission. More importantly, the residual stress and the dislocation density can be suppressed by utilizing the deep-hole pattern and lateral overgrowth, contributing to a lower piezoelectric polarization field and a higher spontaneous emission rate. These ultrafast and high-efficient multi-color micro-LEDs are suitable for the application in highresolution display, flexible devices, and high-speed visible-light-communication.

Keyword :

Stress and defect Microstructures Deep-hole pattern Lateral overgrowth

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GB/T 7714 Tian, Zhenhuan , Zhang, Weihan , Wang, Xuzheng et al. Completely merged multi-color asymmetric pyramid with suppressed stress and defect density [J]. | JOURNAL OF CRYSTAL GROWTH , 2021 , 570 .
MLA Tian, Zhenhuan et al. "Completely merged multi-color asymmetric pyramid with suppressed stress and defect density" . | JOURNAL OF CRYSTAL GROWTH 570 (2021) .
APA Tian, Zhenhuan , Zhang, Weihan , Wang, Xuzheng , Li, Qiang , Su, Xilin , Li, Yufeng et al. Completely merged multi-color asymmetric pyramid with suppressed stress and defect density . | JOURNAL OF CRYSTAL GROWTH , 2021 , 570 .
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Coherent Control of Multiphoton Using Multidressing Fields SCIE
期刊论文 | 2021 | ANNALEN DER PHYSIK
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The competition and coexistence between linear and nonlinear multiphoton optical responses in multidressing fields; these exhibit shaping temporal waveforms is investigated. In the group delay regime, the width of the rectangular profile in double-dressing fields is reduced compared to that of the single-dressing field. In the Rabi oscillation regime, the number of periods in double-dressing fields increases relative to the single-dressing field, and the tri- and quadphotons are observed to feature six and nine coherent channels, respectively. Finally, changing the optical depth and power of the dressing field can alter the optical response. Compared with the single-dressing field, cascaded and nested double-dressing fields reduce the linear coherence time and increase the number of periods; this is useful for photon storage and long-distance communication. Moreover, increasing the number of dressing coherent channels increases the high-dimensional entangled information capacity, which is more conducive to the realization of quantum communication and quantum networks.

Keyword :

different dressing fields quadphoton linear and nonlinear optical responses coherent channel triphoton

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GB/T 7714 Li, Sifan , Li, Yufeng , Xiong, Siqi et al. Coherent Control of Multiphoton Using Multidressing Fields [J]. | ANNALEN DER PHYSIK , 2021 .
MLA Li, Sifan et al. "Coherent Control of Multiphoton Using Multidressing Fields" . | ANNALEN DER PHYSIK (2021) .
APA Li, Sifan , Li, Yufeng , Xiong, Siqi , Qin, Yisha , Feng, Yuan , Zhao, Yuan et al. Coherent Control of Multiphoton Using Multidressing Fields . | ANNALEN DER PHYSIK , 2021 .
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Phosphor-free microLEDs with ultrafast and broadband features for visible light communications EI SCIE CSCD
期刊论文 | 2021 , 9 (4) , 452-459 | PHOTONICS RESEARCH
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Modulation bandwidth and the emission region are essential features for the widespread use of visible light communications (VLC). This paper addresses the contradictory requirements to achieve broadband and proposes ultrafast, asymmetric pyramids grown on adjacent deep concave holes via lateral overgrowth. Multicolor emission with an emission region between 420 nm and 600 nm is obtained by controlling the growth rate at different positions on the same face, which also can provide multiple subcarrier frequency points for the employment of wavelength division multiplexing technology. The spontaneous emission rate distinction is narrowed by lowering the number of the crystal plane, ensuring a high modulation bandwidth over broadband. More importantly, the residual stress and dislocation density were minimized by employing a patterned substrate, and lateral overgrowth resulted in a further enhancement of the recombination rate. Finally, the total modulation bandwidth of multiple subcarriers of the asymmetric pyramids is beyond GHz. These ultrafast, multicolor microLEDs are viable for application in VLC systems and may also enable applications for intelligent lighting and display. (C) 2021 Chinese Laser Press

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GB/T 7714 Tian, Zhenhuan , Li, Qiang , Wang, Xuzheng et al. Phosphor-free microLEDs with ultrafast and broadband features for visible light communications [J]. | PHOTONICS RESEARCH , 2021 , 9 (4) : 452-459 .
MLA Tian, Zhenhuan et al. "Phosphor-free microLEDs with ultrafast and broadband features for visible light communications" . | PHOTONICS RESEARCH 9 . 4 (2021) : 452-459 .
APA Tian, Zhenhuan , Li, Qiang , Wang, Xuzheng , Zhang, Mingyin , Su, Xilin , Zhang, Ye et al. Phosphor-free microLEDs with ultrafast and broadband features for visible light communications . | PHOTONICS RESEARCH , 2021 , 9 (4) , 452-459 .
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Deep-UV hexagonal boron nitride (hBN)/BAlN distributed Bragg reflectors fabricated by RF-sputtering EI SCIE Scopus
期刊论文 | 2021 , 11 (1) , 180-188 | Optical Materials Express
WoS CC Cited Count: 2 SCOPUS Cited Count: 4
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Abstract :

The hexagonal boron nitride (hBN) and BAlN films were prepared by RF-sputtering, which were used as the low and high refractive index layers. A series of hBN/BAlN distributed Bragg reflectors (DBRs)were prepared on sapphire substrate. The reflectivity of 9-pair hBN/BAlN (39 nm/33 nm) DBR reached 90% at 300 nm with a bandwidth of 45 nm, and which of 6-pair hBN/BAlN (35 nm/29 nm) reached 52% at 280 nm. The hBN/BAlN DBRs can be used to achieve higher reflectivity in shorter UV bands with the improvement of BAlN material quality through the growth condition optimization. Funding. Fundamental Research Funds for the Central Universities (XJJ2017011); National Key Research and Development Program of China (2016YFB0400801). © 2020 © 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Keyword :

III-V semiconductors Refractive index Reflection Distributed Bragg reflectors Nitrides Boron nitride Sapphire

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GB/T 7714 LI, QIANG , ZHANG, QIFAN , BAI, YUNHE et al. Deep-UV hexagonal boron nitride (hBN)/BAlN distributed Bragg reflectors fabricated by RF-sputtering [J]. | Optical Materials Express , 2021 , 11 (1) : 180-188 .
MLA LI, QIANG et al. "Deep-UV hexagonal boron nitride (hBN)/BAlN distributed Bragg reflectors fabricated by RF-sputtering" . | Optical Materials Express 11 . 1 (2021) : 180-188 .
APA LI, QIANG , ZHANG, QIFAN , BAI, YUNHE , ZHANG, HAORAN , HU, P.E.N.G , LI, YUFENG et al. Deep-UV hexagonal boron nitride (hBN)/BAlN distributed Bragg reflectors fabricated by RF-sputtering . | Optical Materials Express , 2021 , 11 (1) , 180-188 .
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Low-Threshold and Wavelength-Tunable InGaN Tubular WGM Laser Embedded in a Flexible Substrate SCIE
期刊论文 | 2021 , 11 (10) | CRYSTALS
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We have fabricated a tubular whispering gallery mode laser based on InGaN/GaN quantum wells and transferred it onto a flexible substrate. Compared with those without the transferring processes, the threshold energy density was reduced by 60%, at about 25.55 mu J/cm(2), while a high-quality factor of > 15,000 was obtained. Finite-difference time-domain simulation demonstrated that such a low threshold energy density can be attributed to the decreased mode volume, from 1.32 x 10(-3) mu m(3) to 6.92 x 10(-4) mu m(3). The wavelength dependences on strain were found to be 5.83 nm, 1.38 nm, and 2.39 nm per stretching unit epsilon in the X, Y, and Z directions, respectively. Such strain sensitivity was attributed to the deformation of the GaN microtube and the change in the refractive index of the PDMS.

Keyword :

microtube WGM cavity

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GB/T 7714 Hu, Peng , Li, Yufeng , Zhang, Shengnan et al. Low-Threshold and Wavelength-Tunable InGaN Tubular WGM Laser Embedded in a Flexible Substrate [J]. | CRYSTALS , 2021 , 11 (10) .
MLA Hu, Peng et al. "Low-Threshold and Wavelength-Tunable InGaN Tubular WGM Laser Embedded in a Flexible Substrate" . | CRYSTALS 11 . 10 (2021) .
APA Hu, Peng , Li, Yufeng , Zhang, Shengnan , Zhang, Ye , Tian, Zhenhuan , Yun, Feng . Low-Threshold and Wavelength-Tunable InGaN Tubular WGM Laser Embedded in a Flexible Substrate . | CRYSTALS , 2021 , 11 (10) .
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Demultiplexer of Multi-Order Correlation Interference in Nitrogen Vacancy Center Diamond SCIE PubMed
期刊论文 | 2021 , 14 (22) | MATERIALS
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We reported the second- and third-order temporal interference of two non-degenerate pseudo-thermal sources in a nitrogen-vacancy center (NV-). The relationship between the indistinguishability of source and path alternatives is analyzed at low temperature. In this article, we demonstrate the switching between three-mode bunching and frequency beating effect controlled by the time offset and the frequency difference to realize optical demultiplexer. Our experimental results suggest the advanced technique achieves channel spacing and speed of the demultiplexer of about 96% and 17 ns, respectively. The proposed demultiplexer model will have potential applications in quantum computing and communication.

Keyword :

optical demultiplexer nitrogen vacancy center diamond quantum computing and communications

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GB/T 7714 Li, Xinghua , Raza, Faizan , Li, Yufeng et al. Demultiplexer of Multi-Order Correlation Interference in Nitrogen Vacancy Center Diamond [J]. | MATERIALS , 2021 , 14 (22) .
MLA Li, Xinghua et al. "Demultiplexer of Multi-Order Correlation Interference in Nitrogen Vacancy Center Diamond" . | MATERIALS 14 . 22 (2021) .
APA Li, Xinghua , Raza, Faizan , Li, Yufeng , Wang, Jinnan , Wang, Jinhao , Ali, Hasnain et al. Demultiplexer of Multi-Order Correlation Interference in Nitrogen Vacancy Center Diamond . | MATERIALS , 2021 , 14 (22) .
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Realization of directional single-mode lasing by a GaN-based warped microring EI SCIE CSCD
期刊论文 | 2021 , 9 (4) , 432-438 | PHOTONICS RESEARCH
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Multimode and random directionalities are major issues restricting the application of whispering gallery mode microcavity lasers. We demonstrated a 40 mu m diameter microring with an off-centered embedded hole and warped geometry from strained III-nitride quantum well multilayers. Single-mode directional whispering gallery mode lasing was achieved by the warped structure and high-order mode suppression induced by the off-centered hole. In addition, the introduction of the off-centered hole reduced the lasing threshold from 3.24 to 2.79 MW/cm(2) compared with the warped microdisk without an embedded hole while maintaining a high-quality factor of more than 4000. Directional light emission in 3D was achieved and attributed to the warped structure, which provides a vertical component of the light emission, making it promising for building multifunctional coherent light sources in optoelectronic integration. (C) 2021 Chinese Laser Press

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GB/T 7714 Zhang, Shengnan , Li, Yufeng , Hu, Peng et al. Realization of directional single-mode lasing by a GaN-based warped microring [J]. | PHOTONICS RESEARCH , 2021 , 9 (4) : 432-438 .
MLA Zhang, Shengnan et al. "Realization of directional single-mode lasing by a GaN-based warped microring" . | PHOTONICS RESEARCH 9 . 4 (2021) : 432-438 .
APA Zhang, Shengnan , Li, Yufeng , Hu, Peng , Tian, Zhenhuan , Li, Qiang , Li, Aixing et al. Realization of directional single-mode lasing by a GaN-based warped microring . | PHOTONICS RESEARCH , 2021 , 9 (4) , 432-438 .
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Unidirectional emission of GaN-based eccentric microring laser with low threshold EI SCIE Scopus
期刊论文 | 2020 , 28 (5) , 6443-6451 | OPTICS EXPRESS | IF: 3.894
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To reduce the threshold and achieve unidirectional lasing emission in a whispering gallery mode microcavity, we propose and demonstrate a Galsl-based eccentric microring with an inner hole located off the center. Compared to microdisk with the same outer diameter, the eccentric microring structure exhibits a remarkable reduction of lasing threshold by up to 53%. The introduction of the hole disturbs and eventually suppresses the field distribution of the higher order modes. Laser emission with high unidirectionality with a far-field divergence angle of about 40 degrees has been achieved, meanwhile the Q factor of the whispering gallery modesis remains high as 6388. Finite-difference time-domain numerical simulation is carried out to prove that the far-field profile of the eccentric microring structure can be controlled by the position and the size of the hole. The properties of the whispering gallery mode microcavities are improved greatly through a simple structure and process, which has an important guiding significance to the research and development of the microcavity lasers. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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GB/T 7714 Zhang, Shengnan , Li, Yufeng , Hu, Peng et al. Unidirectional emission of GaN-based eccentric microring laser with low threshold [J]. | OPTICS EXPRESS , 2020 , 28 (5) : 6443-6451 .
MLA Zhang, Shengnan et al. "Unidirectional emission of GaN-based eccentric microring laser with low threshold" . | OPTICS EXPRESS 28 . 5 (2020) : 6443-6451 .
APA Zhang, Shengnan , Li, Yufeng , Hu, Peng , Li, Aixing , Zhang, Ye , Du, Wei et al. Unidirectional emission of GaN-based eccentric microring laser with low threshold . | OPTICS EXPRESS , 2020 , 28 (5) , 6443-6451 .
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GaN ultraviolet photodetector with petal-like β -Ga2O3microcrystalline layer EI SCIE Scopus
期刊论文 | 2020 , 10 (12) | AIP Advances | IF: 1.548
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A GaN ultraviolet photodetector with a petal-like β-Ga2O3 microcrystalline layer was prepared on the GaN template using electrochemical anodizing and annealing processes. The petal-like β-Ga2O3 microcrystalline layer was found to enhance the absorption of ultraviolet light and suppress the dark current, and a high responsivity from 230 nm (responsivity 8.5 A/W) to 400 nm (responsivity 0.1 A/W) was achieved by the photodetector. The rejection ratio of ultraviolet-visible light is greater than three orders of magnitude representing a high selectivity of ultraviolet light detection. The responsivity slopes of the photodetector under different biases were found to be strongly correlated with the wavelength of light, and the responsivity is much higher than that of conventional metal/insulator/metal wavelength identification photodetectors. This effective method of synthesizing β-Ga2O3 crystallites on GaN can be used to enhance the ultraviolet absorption of GaN photodetectors and improve the detection performance. © 2020 Author(s).

Keyword :

Microcrystals Dark currents III-V semiconductors Crystallites Gallium nitride Photodetectors Photons Ultraviolet radiation

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GB/T 7714 Su, Xilin , Li, Yufeng , Zhang, Minyan et al. GaN ultraviolet photodetector with petal-like β -Ga2O3microcrystalline layer [J]. | AIP Advances , 2020 , 10 (12) .
MLA Su, Xilin et al. "GaN ultraviolet photodetector with petal-like β -Ga2O3microcrystalline layer" . | AIP Advances 10 . 12 (2020) .
APA Su, Xilin , Li, Yufeng , Zhang, Minyan , Hu, Peng , Guo, Maofeng , Li, Aixing et al. GaN ultraviolet photodetector with petal-like β -Ga2O3microcrystalline layer . | AIP Advances , 2020 , 10 (12) .
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