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< Page ,Total 35 >
A Compact Double-Sided Cooling 650V/30A GaN Power Module with Low Parasitic Parameters EI
期刊论文 | 2022 , 37 (1) , 426-439 | IEEE Transactions on Power Electronics
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Abstract :

Compared with silicon and silicon carbide devices, the unique electrical and structural characteristics of gallium nitride high electron mobility transistors (GaN HEMTs) make them have different requirements for power module integration. This article proposes a novel integration scheme for the high-voltage lateral GaN HEMT dies without bonding wires. Based on the proposed integration scheme, a compact 650 V/30 A GaN power module with low parasitic parameters and high thermal performance is designed. The GaN dies are sandwiched between two ceramic substrates to improve thermal performance and ensure consistent thermal expansion coefficients. The multiple copper layer structure is used to increase wiring flexibility to reduce parasitic parameters. The design of gate and power loop layouts is discussed, and the common-mode (CM) capacitance is optimized. A comprehensive reliability evaluation is also carried out for this integration scheme. Finally, a double-sided cooling 650 V/30 A full-bridge GaN power module with 2.4 cm×1.3 cm×0.17 cm is fabricated. The thermal resistance is reduced by 30%-48% compared with the conventional single-sided cooling module. The power loop and gate loop inductances are reduced to 0.94 nH and 2 nH, respectively, and the CM capacitance is limited to 2.5 pF. The maximum dv/dt of the drain-source voltage is high as 150 V/ns with only 10% overshoot. Based on the power module, a 3.3-kW two-phase interleaved buck converter is developed. It has 820 W/in3 power density and 98.85% peak efficiency. © 1986-2012 IEEE.

Keyword :

Cooling Ceramic materials III-V semiconductors Gallium nitride Vanadium compounds DC-DC converters Integration Thermal expansion Capacitance Electric power systems Inductance Silicon carbide

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GB/T 7714 Li, Bingyang , Yang, Xu , Wang, Kangping et al. A Compact Double-Sided Cooling 650V/30A GaN Power Module with Low Parasitic Parameters [J]. | IEEE Transactions on Power Electronics , 2022 , 37 (1) : 426-439 .
MLA Li, Bingyang et al. "A Compact Double-Sided Cooling 650V/30A GaN Power Module with Low Parasitic Parameters" . | IEEE Transactions on Power Electronics 37 . 1 (2022) : 426-439 .
APA Li, Bingyang , Yang, Xu , Wang, Kangping , Zhu, Hongkeng , Wang, Laili , Chen, Wenjie . A Compact Double-Sided Cooling 650V/30A GaN Power Module with Low Parasitic Parameters . | IEEE Transactions on Power Electronics , 2022 , 37 (1) , 426-439 .
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Power Flow Calculation of Distribution Network with Multiple Energy Routers EI SCIE
期刊论文 | 2021 , 9 , 23489-23497 | IEEE Access
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Abstract :

Energy router is an emerging device based on power electronic technology, which can realize the flexible distribution of electric energy in the power system. Therefore, the use of energy routers to improve the operating conditions of the power system not only has broad development prospects, but also brings economic benefits. In this regard, this paper proposes a steady-state model of a single energy router and considers the loss of the DC/DC transformer, establishes a power flow equation with multiple energy routers, and proposes a distribution network power flow alternate iteration that takes into account multiple energy routers Calculation method. A case study of an improved IEEE-33 system with multiple energy routers under different working conditions is carried out. The calculation results show that the alternate iterative power flow calculation method used in this paper is effective and feasible, and it reasonably reflects that the network analysis model with multiple energy routers can achieve stable operation, and it can improve the node voltage and reduce the active power loss of the grid. It makes the operation of the distribution network more flexible. © 2013 IEEE.

Keyword :

Electric power distribution DC-DC converters Electric load flow DC transformers Iterative methods

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GB/T 7714 Huang, Lang , Zong, Chenxi , Yang, Xu et al. Power Flow Calculation of Distribution Network with Multiple Energy Routers [J]. | IEEE Access , 2021 , 9 : 23489-23497 .
MLA Huang, Lang et al. "Power Flow Calculation of Distribution Network with Multiple Energy Routers" . | IEEE Access 9 (2021) : 23489-23497 .
APA Huang, Lang , Zong, Chenxi , Yang, Xu , Chen, Wenjie , Zhu, Yixin , Bi, Kaitao . Power Flow Calculation of Distribution Network with Multiple Energy Routers . | IEEE Access , 2021 , 9 , 23489-23497 .
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A Novel Copper Layer-Based Field-to-Trace Coupling Model and EMS Evaluation Method for DSP-Based Control Circuit in MMC-HVDC System EI SCIE
期刊论文 | 2021 , 9 (1) , 1133-1146 | IEEE Journal of Emerging and Selected Topics in Power Electronics
WoS CC Cited Count: 1
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Abstract :

Underlying control circuit failure problems, especially control signal output failure problems, widely occur in high-voltage large-current modular multilevel converter (MMC) valve towers. The failure mechanism for the digital signal processor (DSP)-based control circuit is studied in this article. This study is based on the combination of low-voltage-level integrated circuit (IC) immunity model and a new perspective on the field-to-trace coupling effect. A novel copper-layer-based field-to-trace coupling model which combines the power system and digital control circuit in the MMC valve tower is proposed. Therefore, the specific electromagnetic interference (EMI) value conducted into the IC can be calculated. Then a new DSP IC electromagnetic sensitivity (EMS) evaluation method is proposed, which can be a guideline in industrial applications. To show the validity and accuracy of the field-to-trace coupling model, an indirect laboratory experiment is designed, then a situation is considered in this article, and the results are compared with PSpice circuit simulations, which show acceptable relative errors. Moreover, based on the situation considered above, one application example of the novel evaluation method is described in detail. © 2013 IEEE.

Keyword :

SPICE HVDC power transmission Copper Digital control systems Electromagnetic pulse Timing circuits Outages Failure (mechanical) Digital signal processors Digital signal processing

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GB/T 7714 Tian, Yidong , Yang, Xu , Chen, Wenjie . A Novel Copper Layer-Based Field-to-Trace Coupling Model and EMS Evaluation Method for DSP-Based Control Circuit in MMC-HVDC System [J]. | IEEE Journal of Emerging and Selected Topics in Power Electronics , 2021 , 9 (1) : 1133-1146 .
MLA Tian, Yidong et al. "A Novel Copper Layer-Based Field-to-Trace Coupling Model and EMS Evaluation Method for DSP-Based Control Circuit in MMC-HVDC System" . | IEEE Journal of Emerging and Selected Topics in Power Electronics 9 . 1 (2021) : 1133-1146 .
APA Tian, Yidong , Yang, Xu , Chen, Wenjie . A Novel Copper Layer-Based Field-to-Trace Coupling Model and EMS Evaluation Method for DSP-Based Control Circuit in MMC-HVDC System . | IEEE Journal of Emerging and Selected Topics in Power Electronics , 2021 , 9 (1) , 1133-1146 .
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Common-Mode EMI Mathematical Modeling Based on Inductive Coupling Theory in a Power Module with Parallel-Connected SiC MOSFETs EI SCIE
期刊论文 | 2021 , 36 (6) , 6644-6661 | IEEE Transactions on Power Electronics
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Abstract :

Parallelization of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) could significantly improve the current capability and power rating of power converters. However, the inductive coupling effect of parasitic inductance between the paralleled branches is a critical challenge for the mathematical modeling of electromagnetic interference (EMI) in a power module with parallel-connected SiC MOSFETs (PMPSM). In this article, first, an EMI source generation mathematical modeling method for PMPSM is proposed. The quantitative analysis of EMI interference source caused by inductive coupling of PMPSM is introduced. Second, a common mode (CM) interference propagation mathematical modeling method for PMPSM is proposed. Through the equivalent CM interference source and equivalent impedance model, the strong and weak inductive coupling theory of CM interference equivalent circuit based on parallel-connected SiC MOSFETs is proposed. Third the effect of different decoupling capacitance values on EMI source is compared and analyzed and the influence of changing the ratio of coupling inductance inside and outside the decoupling branch on EMI source of parallel-connected switches is analyzed. Finally, a self-made 1.2-kV 160-A PMPSM based on EMI optimized layout is proposed and tested via an experimental platform of synchronous buck converter, which can verify the feasibility and validity of the proposed power module and the theoretical analysis. © 1986-2012 IEEE.

Keyword :

Silicon carbide Power MOSFET Inductance DC-DC converters Silicon compounds Silicon Electromagnetic pulse Electromagnetic induction Equivalent circuits Electromagnetic coupling

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GB/T 7714 Chen, Xiliang , Chen, Wenjie , Yang, Xu et al. Common-Mode EMI Mathematical Modeling Based on Inductive Coupling Theory in a Power Module with Parallel-Connected SiC MOSFETs [J]. | IEEE Transactions on Power Electronics , 2021 , 36 (6) : 6644-6661 .
MLA Chen, Xiliang et al. "Common-Mode EMI Mathematical Modeling Based on Inductive Coupling Theory in a Power Module with Parallel-Connected SiC MOSFETs" . | IEEE Transactions on Power Electronics 36 . 6 (2021) : 6644-6661 .
APA Chen, Xiliang , Chen, Wenjie , Yang, Xu , Ren, Yu , Qiao, Liang . Common-Mode EMI Mathematical Modeling Based on Inductive Coupling Theory in a Power Module with Parallel-Connected SiC MOSFETs . | IEEE Transactions on Power Electronics , 2021 , 36 (6) , 6644-6661 .
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DM Interference Propagation Mathematical Modeling in SiC Wirebond Multichip Power Module EI SCIE
期刊论文 | 2021 , 68 (6) , 2077-2081 | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
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Abstract :

In this brief, a novel differential-mode (DM) interference propagation mathematical modeling method based on parasitic inductive coupling theory for SiC wirebond multichip power module (SWMPM) with adjacent decoupling capacitor is proposed. Based on the proposed model, the strong and weak inductive coupling theory of DM interference equivalent circuit is proposed. And the influence of different position of decoupling capacitors on DM equivalent current is mathematically analyzed. A custom-made 1.2kV 160A power module based on DM interference optimized layout is built. It is compared with a commercial SiC power module, which can verify the feasibility and validity of the theoretical analysis.

Keyword :

Capacitors Couplings mathematical modeling EMI inductive coupling differential-mode interference parallel-connected Electromagnetic interference Mathematical model SiC MOSFET MOSFET decoupling capacitors Silicon carbide Multichip modules

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GB/T 7714 Chen, Xiliang , Chen, Wenjie , Ren, Yu et al. DM Interference Propagation Mathematical Modeling in SiC Wirebond Multichip Power Module [J]. | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS , 2021 , 68 (6) : 2077-2081 .
MLA Chen, Xiliang et al. "DM Interference Propagation Mathematical Modeling in SiC Wirebond Multichip Power Module" . | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS 68 . 6 (2021) : 2077-2081 .
APA Chen, Xiliang , Chen, Wenjie , Ren, Yu , Yang, Xu , Qiao, Liang . DM Interference Propagation Mathematical Modeling in SiC Wirebond Multichip Power Module . | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS , 2021 , 68 (6) , 2077-2081 .
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A novel 19L hybrid multilevel inverter system synthesizes reduced number of switches for hybrid renewable energy applications EI SCIE
期刊论文 | 2021 , 31 (5) | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS
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Abstract :

This paper presents a novel hybrid Multilevel Inverter (MLI) system. This hybrid system consisted of a nine-Level MLI unit that is connected back to back with a developed H-Bridge unit. The combination synthesizes only 10 power switches, two diodes, and four DC supplies to generate an output voltage waveform with 19 steps. The high number of steps in the output voltage helps produce a fine output waveform and more close to the sinusoidal shape with a small amount of THD. Also, it reduces the voltage stress across the switches and gives it a long lifetime, which brings more reliability. Moreover, the system synthesizes a reduced number of switches, which reduces the power losses and achieves high efficiency, and ensures small size and low cost for the proposed system. For amplifying the output power level, the paper presents two scenarios for the system expansion; both the scenarios achieve good results. To highlight the features of the proposed topology, a comparison between the proposed topology and the recently MLI topologies have been held. The comparison shows good advantages for the proposed topology over the other topologies. Two different controlling schemes (low switching frequency and model predictive control [MPC]) have been applied to control the proposed topology. The validation of the proposed topology was given through the simulation results based on MATLAB/Simulink for both the basic unit and the expanded system. Also, an experimental prototype based on the DSpace-1103 controller has been built, and the captured results support the simulation results.

Keyword :

DSPACE DS1103 renewable energy integration AC converters hybrid MLIs multilevel converter DC THD

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GB/T 7714 Hassan, Alaaeldien , Yang, Xu , Chen, Wenjie . A novel 19L hybrid multilevel inverter system synthesizes reduced number of switches for hybrid renewable energy applications [J]. | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS , 2021 , 31 (5) .
MLA Hassan, Alaaeldien et al. "A novel 19L hybrid multilevel inverter system synthesizes reduced number of switches for hybrid renewable energy applications" . | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS 31 . 5 (2021) .
APA Hassan, Alaaeldien , Yang, Xu , Chen, Wenjie . A novel 19L hybrid multilevel inverter system synthesizes reduced number of switches for hybrid renewable energy applications . | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS , 2021 , 31 (5) .
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Ageing Evaluation of the Distribution Transformer under Varying Load due to Electric Vehicle Charging EI
会议论文 | 2021 | 3rd International Conference on Electrical Materials and Power Equipment, ICEMPE 2021
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Abstract :

Electric vehicles are expected to offer many benefits over conventional vehicles, such as reduction of carbon emission and fuel costs. However, the adoption of electric vehicles would bring great challenges to the distribution transformer, as their charging behavior would make the transformer operate under the varying load and therefore submit to overload risk. Hence, the insulation aging which shortens the transformer lifetime would be accelerated. In this research, we study the impacts of electric vehicle charging on the aging of the distribution transformer with conventional and higherature insulations. The number of households, base load and charging habits of a district in Jiaxing city are collected, and then a Monte Carlo simulation model is proposed to evaluate the additional load demand due to the electric vehicle charging. Furthermore, the simulated load demand is input to a model, which is modified based on the algorithm stipulated in IEEE C57.91, to calculate the thermal rise and the aging of the distribution transformer. The results imply that the electric vehicle charging would exacerbate the swing of the load demand. Particularly, the lifetime of the conventional distribution transformer would be significantly reduced. In comparison, the higherature insulation could mitigate the negative impacts of the electric vehicle charging on the transformer ageing. © 2021 IEEE.

Keyword :

Electric automobiles Electric load distribution Electric transformer loads Monte Carlo methods Electric transformer insulation Charging (batteries)

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GB/T 7714 Qian, Sen , Zhang, Xiaojing , Chen, Chuan et al. Ageing Evaluation of the Distribution Transformer under Varying Load due to Electric Vehicle Charging [C] . 2021 .
MLA Qian, Sen et al. "Ageing Evaluation of the Distribution Transformer under Varying Load due to Electric Vehicle Charging" . (2021) .
APA Qian, Sen , Zhang, Xiaojing , Chen, Chuan , Wang, Hongkang , Guo, Jinghong , Xu, Yang . Ageing Evaluation of the Distribution Transformer under Varying Load due to Electric Vehicle Charging . (2021) .
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Drive parameters analysis considering the crosstalk effect of silicon carbide MOSFET in a Phase-leg configuration EI
会议论文 | 2021 , 985-990 | 12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
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Abstract :

Silicon carbide MOSFET is gradually replacing silicon devices as the preferred power devices with its advanced performance. However, in practical application, the interaction in a SiC MOSFET phase-leg configuration may lead one switch turn on by error, which is called the crosstalk effect and will cause catastrophic damage to the circuit. This paper proposed a mathematical model for analyzing the crosstalk effect of SiC MOSFET. The model considered the parasitic inductance in the loop and the possible added capacitor between gate and source and systematically investigated the influence of multi parameters on the crosstalk effect. The circuit parameters dependence of the crosstalk effect provides theoretical implications and practical guidelines for the gate drive design of SiC MOSFET. The crucial to utilize the active clamp function in the commercial driver chip to suppress crosstalk is to reduce the parasitic inductance. Experiment results validate the driving resistance and the added capacitor dependence of the crosstalk effect. © 2021 IEEE.

Keyword :

MOSFET devices Silicon carbide Crosstalk Power semiconductor devices Inductance Energy conversion

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GB/T 7714 Wei, Jiwen , Yang, Xu , Wang, Kangping et al. Drive parameters analysis considering the crosstalk effect of silicon carbide MOSFET in a Phase-leg configuration [C] . 2021 : 985-990 .
MLA Wei, Jiwen et al. "Drive parameters analysis considering the crosstalk effect of silicon carbide MOSFET in a Phase-leg configuration" . (2021) : 985-990 .
APA Wei, Jiwen , Yang, Xu , Wang, Kangping , Chen, Wenjie , Zhu, Hongkeng , Wu, Jiarui et al. Drive parameters analysis considering the crosstalk effect of silicon carbide MOSFET in a Phase-leg configuration . (2021) : 985-990 .
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A High Input Voltage Auxiliary Power Supply Utilizing Automatic Balanced MOSFET Stack EI SCIE
期刊论文 | 2021 , 68 (11) , 10654-10665 | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
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In order to deal with the challenges in establishing a high input voltage high step-down auxiliary power supply (APS) for modular converters, a flyback converter utilizing series-connected silicon carbide (SiC) MOSFETs is proposed in this article. With the aid of a novel snubber circuit structure, the used series-connected SiC MOSFETs can switch with nearly perfect dynamic voltage sharing. Besides, the snubber circuit acts as voltage clamping circuit for the flyback converter, so voltage overshoot caused by transformer leakage inductance can be effectively controlled. Furthermore, the snubber circuit helps to power the control, gate driver, and startup circuits of the APS, leading to a reduction in system complexity and improvement in efficiency. Detailed circuit analysis and design considerations of the APS are presented. Finally, hardware of a 4 kV/120 W APS is established and experimentally verified.

Keyword :

MOSFET Silicon carbide Switches Auxiliary power supply (APS) snubber circuit voltage balancing Power supplies series-connection Voltage control silicon carbide (SiC) MOSFET Capacitors Snubbers

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GB/T 7714 Zhang, Fan , Ren, Yu , Yang, Xu et al. A High Input Voltage Auxiliary Power Supply Utilizing Automatic Balanced MOSFET Stack [J]. | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS , 2021 , 68 (11) : 10654-10665 .
MLA Zhang, Fan et al. "A High Input Voltage Auxiliary Power Supply Utilizing Automatic Balanced MOSFET Stack" . | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS 68 . 11 (2021) : 10654-10665 .
APA Zhang, Fan , Ren, Yu , Yang, Xu , Chen, Wenjie , Wang, Laili . A High Input Voltage Auxiliary Power Supply Utilizing Automatic Balanced MOSFET Stack . | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS , 2021 , 68 (11) , 10654-10665 .
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Stability Analysis and Improvement for SSCB With Single-Gate Controlled Series-Connected SiC MOSFETs SCIE
期刊论文 | 2021 , 68 (9) , 8093-8103 | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
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Abstract :

Silicon carbide-based solid-state circuit breaker (SSCB) exhibits superior performance in dealing with the interruption of dc short-circuit current compared with the mechanical switch. The blocking voltage of commercially available SiC devices still cannot meet the voltage requirements. Series-connected SiC mosfets providing higher blocking voltage based SSCB with the single-gate driver has been proposed previously. However, the sustained oscillation phenomenon, unacceptable false gate-trigger, and severely unbalanced voltage distribution have been observed after the energy-absorbing stage in the circuit. These phenomena are mainly caused by the capacitor coupling mechanism among the two series-connected devices due to specific circuit configuration. This article elaborates on the mechanism of the oscillation by establishing the small-signal models. Based on the stability criterion analysis, an effective damping method is proposed to improve the stability of the SSCB. Simulation and experimental tests have been conducted to verify the effectiveness of the proposed damping method.

Keyword :

Integrated circuit modeling stability improvement Oscillators Circuit stability MOSFET silicon carbide (SiC) series-connection Silicon carbide Circuit breaker Logic gates Stability analysis sustained oscillation

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GB/T 7714 Ren, Yu , Zhang, Fan , Han, Xiaoqing et al. Stability Analysis and Improvement for SSCB With Single-Gate Controlled Series-Connected SiC MOSFETs [J]. | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS , 2021 , 68 (9) : 8093-8103 .
MLA Ren, Yu et al. "Stability Analysis and Improvement for SSCB With Single-Gate Controlled Series-Connected SiC MOSFETs" . | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS 68 . 9 (2021) : 8093-8103 .
APA Ren, Yu , Zhang, Fan , Han, Xiaoqing , Yang, Xu , Chen, Wenjie , Tian, Mingyu et al. Stability Analysis and Improvement for SSCB With Single-Gate Controlled Series-Connected SiC MOSFETs . | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS , 2021 , 68 (9) , 8093-8103 .
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