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Author:

Liu, Gu (Liu, Gu.) | Wang, Liuying (Wang, Liuying.) | Chen, Guiming (Chen, Guiming.) | Wei, Wanning (Wei, Wanning.) | Ge, Chaoqun (Ge, Chaoqun.) | Zhang, Hu (Zhang, Hu.)

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Abstract:

In this paper, we have studied on the absorbing properties of three different types of SiC absorbers such as ultra-fine SiC, SiC whisker and nanometer SiC. Electromagnetic parameters of the three types of SiC were tested in the frequency range of 2∼18GHz. Both the real and imaginary parts of complex permittivity of nanometer SiC are higher than that of others. The attenuation constant of nanometer SiC is higher than that of ultra-fine SiC and SiC whisker, increasing from 93.7 to 766.5 with increasing frequency. The minimum reflection loss of -5.53 dB was obtained at 9.72 GHz for the nanometer SiC. The nanometer SiC suggests a better capacity of dielectric loss in microwave range than that of ultra-fine SiC and SiC whisker. © (2012) Trans Tech Publications.

Keyword:

Absorbing properties Attenuation constants Comparison study Complex permittivity Electromagnetic parameters Frequency ranges Imaginary parts Microwave absorbing properties Microwave absorption Reflection loss SiC SiC whisker

Author Community:

  • [ 1 ] [Liu, Gu;Wang, Liuying;Chen, Guiming;Wei, Wanning;Ge, Chaoqun;Zhang, Hu]Xi'an Hi-Tech Research Institute, Xi'an 710025, China
  • [ 2 ] [Wang, Liuying]Key Laboratory of Electronic Ceramics and Devices of Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China

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Source :

Applied Mechanics and Materials

ISSN: 1660-9336

Year: 2012

Publish Date: 2012

Volume: 117-119

Page: 1057-1060

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 9

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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