We　carried　out　calculations　to　investigate　the　influence　of　thermal　conductivity　of　the　wall　of　a　crucible　on　thermal　stress　and　dislocations　in　a　silicon　ingot　during　a　solidification　process　using　a　three-dimensional　global　analysis.　It　was　found　that　the　m-c　interface　shape　and　the　temperature　gradient　in　a　silicon　ingot　have　significant　influence　on　thermal　stress　and　dislocations　due　to　different　thermal　conductivity　of　the　wall　of　a　crucible.　Therefore,　we　should　control　not　only　the　m-c　interface　shape,　but　also　temperature　gradient　in　a　silicon　ingot　in　order　to　reduce　thermal　stress　and　dislocations　in　a　silicon　ingot　during　a　solidification　process.　(C)　2010　Elsevier　B.V.　All　rights　reserved.