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Author:

Zhang, Jian-Min (Zhang, Jian-Min.) | Wen, Yan-Ni (Wen, Yan-Ni.) | Xu, Ke-Wei (Xu, Ke-Wei.) | Ji, Vincent (Ji, Vincent.)

Indexed by:

SCIE EI Scopus

Abstract:

The formation mechanism of the di-vacancy in FCC metal Pt has been studied from the migration of the two vacancies by using the modified analytical embedded atom method (MAEAM). The lattice relaxation resulted from the existence of the vacancies is performed with the molecular dynamics (MD) method. For migration of an isolated vacancy in Pt, the favorable path is the first-nearest-neighbor (INN) migration. From the minimum formation energy or the maximum binding energy of the di-vacancy, we know that the INN configuration of the di-vacancy is the most stable. Up to the fifth-nearest-neighbor (5NN) configuration of the di-vacancy, the migration of the two vacancies is always to approach each other in the shortest paths of 5NN -> 2NN -> 1NN, 4NN -> 1NN, 3NN -> 1NN and 2NN -> 1NN. (C) 2008 Elsevier Ltd. All rights reserved.

Keyword:

defects diffusion epitaxial growth metals

Author Community:

  • [ 1 ] [Zhang, Jian-Min; Wen, Yan-Ni] Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
  • [ 2 ] [Wen, Yan-Ni] Ankang Univ, Ankang 725000, Shaanxi, Peoples R China
  • [ 3 ] [Xu, Ke-Wei] Xian Jiaotong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
  • [ 4 ] [Ji, Vincent] Univ Paris 11, ICMMO, LEMHE, CNRS,UMR 8182, F-91405 Orsay, France

Reprint Author's Address:

  • Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China.

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Source :

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

ISSN: 0022-3697

Year: 2008

Issue: 8

Volume: 69

Page: 1957-1962

1 . 1 0 3

JCR@2008

3 . 9 9 5

JCR@2020

ESI Discipline: PHYSICS;

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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