In　high　power　applications,　the　insulated-gate　bipolar　transistors　(IGBTs)　are　often　required　to　be　connected　in　parallel　in　order　to　withstand　the　large　load　current.　However,　the　current　of　paralleled　IGBTs　may　not　be　shared　equally　due　to　spread　of　parameters.　The　current　unbalance　in　transient　and　steady　state　can　result　in　overheat　and　overcurrent　destruction　of　the　devices.　In　this　paper　a　novel　active　gate　driver　is　proposed　to　optimize　both　the　static　and　dynamic　current　sharing　of　paralleled　IGBTs　automatically.　The　proposed　active　gate　driver　does　not　need　complex　digital　processing　or　current　measuring　and　is　therefore　fast　and　convenient.　Simulations　have　been　done　to　verify　the　effectiveness　of　the　proposed　strategy　and　promising　results　have　been　obtained.　Experimental　results　show　that　the　proposed　gate　driver　can　effectively　reduce　the　static　and　dynamic　current　unbalance　between　parallel　connected　IGBTs.