Carbon　nanotube　(CNT)　films　were　grown　on　silicon　wafers　with　and　without　a　nickel　layer　(Si-CNT　and　Ni-CNT)　via　the　pyrolysis　of　iron　phthalocyanine.　The　nickel　layer　was　prepared　using　the　electroless　plating　method.　To　study　the　emission　stability　of　Si-CNT　and　Ni-CNT　cathodes　during　intense　pulsed　emission,　emission　characteristics　were　measured　repeatedly　with　a　diode　structure　using　a　Marx　generator　as　a　voltage　source.　For　the　peak　values　of　the　pulsed　voltage,　which　were　in　the　range　between　1.62-1.66　MV　(corresponding　to　electric　field　intensities　between　11.57-11.85　V/mu　m),　the　first　cycle　emission　current　was　109.4　A　for　Si-CNT　and　180.5　A　for　Ni-CNT.　By　comparing　the　normalized　emission　currents　of　the　Si-CNT　and　Ni-CNT　cathodes,　the　improvement　in　the　emission　stability　can　be　easily　quantified.　The　number　of　emission　cycles　necessary　for　the　peak　current　to　decay　from　100%　to　50%　increased　from　similar　to　3　for　Si-CNT　to　similar　to　11　for　a　Ni-CNT　film.