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Author:

Yu, Qinghua (Yu, Qinghua.) | Liu, Lijun (Liu, Lijun.) | Ma, Wencheng (Ma, Wencheng.) | Zhong, Genxiang (Zhong, Genxiang.) | Huang, Xinming (Huang, Xinming.)

Indexed by:

SCIE EI Scopus

Abstract:

To preserve the seed crystal in the melting process and improve the thermal field in the hot-zone during the solidification process aiding the formation of a quasi-single crystalline silicon ingot, an insulation partition block was designed for use in the hot-zone of an industrial seeded directional solidification furnace. A global model taking into account thermal conduction, thermal radiation, melt convection and argon flow was established to investigate the effects of the insulation configuration design on the thermal field, solidification interface shape, melt convection, argon recirculation and power consumption. In addition to comparing insulation configuration designs with and without the partition block, we carried out a comprehensive parameter study of the local design of the hot-zone, including the position, the width and the thickness of the insulation partition block. The results show that a suitable temperature gradient and a flat or slightly convex interface during seed preservation and bulk crystal growth can be achieved to maintain the quasi-single crystal structure all the way to the top of the silicon ingot. Furthermore, the argon recirculation and energy consumption can be reduced and the melt flow motion can be controlled by good insulation partition block design. (C) 2012 Elsevier B.V. All rights reserved.

Keyword:

Computer simulation Directional solidification Heat transfer Quasi-single crystal growth Solar cells

Author Community:

  • [ 1 ] [Yu, Qinghua; Liu, Lijun; Ma, Wencheng; Zhong, Genxiang] Xi An Jiao Tong Univ, Sch Energy & Power Engn, Minist Educ, Key Lab Thermofluid Sci & Engn, Xian 710049, Shaanxi, Peoples R China
  • [ 2 ] [Zhong, Genxiang; Huang, Xinming] Donghai JA Solar Technol Co Ltd, Lianyungang 222300, Jiangsu, Peoples R China

Reprint Author's Address:

  • Xi An Jiao Tong Univ, Sch Energy & Power Engn, Minist Educ, Key Lab Thermofluid Sci & Engn, Xian 710049, Shaanxi, Peoples R China.

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Source :

JOURNAL OF CRYSTAL GROWTH

ISSN: 0022-0248

Year: 2012

Volume: 358

Page: 5-11

1 . 5 5 2

JCR@2012

1 . 7 9 7

JCR@2020

ESI Discipline: CHEMISTRY;

ESI HC Threshold:255

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 51

SCOPUS Cited Count: 67

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 17

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