To　improve　the　performance　of　amorphous　InGaZnOx　(a-IGZO)　thin　film　transistors　(TFTs),　in　this　thesis,　Cs+　ions　adsorbed　IGZO　(Cs-IGZO)　films　were　prepared　through　a　solution　immersion　method　at　low　temperature.　Under　the　modification　of　surface　structure　and　oxygen　vacancies　concentrations　of　a-IGZO　film,　with　the　effective　introduction　of　Cs+　ions　into　the　surface　of　a-IGZO　films,　the　transfer　properties　and　stability　of　a-IGZO　TFTs　are　greatly　improved.　Different　parameters　of　Cs+　ion　concentrations　were　investigated　in　our　work.　When　the　Cs+　ions　concentration　reached　2%　mol/L,　the　optimized　performance　Cs-IGZO　TFT　was　obtained,　showing　the　carrier　mobility　of　18.7　cm2　V-1　5-1,　the　OFF　current　of　0.8　x　10(-10)　A,　and　the　threshold　voltage　of　0.2　V,　accompanied　by　the　threshold　voltage　shifts　of　1.3　V　under　positive　bias　stress　for　5000　s.