Two-dimensional　(2D)　Dirac　cone　materials　exhibit　linear　energy　dispersion　at　the　Fermi　level,　where　the　effective　masses　of　carriers　are　very　close　to　zero　and　the　Fermi　velocity　is　ultrahigh,　only　2-3　orders　of　magnitude　lower　than　the　light　velocity.　Such　Dirac　cone　materials　have　great　promise　in　high-performance　electronic　devices.　Herein,　we　have　employed　the　genetic　algorithm　methods　combined　with　first-principles　calculations　to　propose　a　new　2D　anisotropic　Dirac　cone　material,　an　orthorhombic　boron　phosphide　(BP)　monolayer　named　borophosphene.　Molecular　dynamics　simulation　and　phonon　dispersion　have　been　used　to　evaluate　the　dynamic　and　thermal　stability　of　borophosphene.　Because　of　the　unique　arrangements　of　B-B　and　P-P　dimers,　the　mechanical　and　electronic　properties　are　highly　anisotropic.　Of　great　interest　is　the　fact　that　the　Dirac　cone　of　the　borophosphene　is　robust,　independent　of　in-plane　biaxial　and　uniaxial　strains,　and　can　also　be　observed　in　its　one-dimensional　zigzag　nanoribbons　and　armchair　nanotubes.　The　Fermi　velocities　are　â105　m/s,　on　the　same　order　of　magnitude　as　that　of　graphene.　By　using　a　tight-binding　model,　the　origin　of　the　Dirac　cone　of　borophosphene　is　analyzed.　Moreover,　a　unique　feature　of　self-doping　can　be　induced　by　the　in-plane　biaxial　and　uniaxial　strains　of　borophosphene　and　the　curvature　effect　of　nanotubes,　which　is　greatly　beneficial　for　realizing　high-speed　carriers　(holes).　Our　results　suggest　that　the　borophosphene　holds　great　promise　for　high-performance　electronic　devices,　which　could　promote　experimental　and　theoretical　studies　for　further　exploring　the　potential　applications　of　other　2D　Dirac　cone　sheets.　Copyright　©　2019　American　Chemical　Society.