In　this　paper,　the　partial　discharge　detection　circuit　was　built　and　the　partial　discharge　behaviors　in　SF6　gas　filled　void　in　basin-type　insulators　excited　by　OSI　(oscillating　switching　impulses)　were　experimentally　explored.　In　order　to　reveal　the　mechanism　hidden　behind　partial　discharge　under　OSI,　the　modeling　and　simulation　for　partial　discharge　sequences　were　carried　out.　The　results　show　that:　the　partial　discharge　sequences　under　OSI　exhibit　the　character　of　stages　with　the　increase　of　applied　voltage;　PDIE　and　PDEE　decrease　with　the　expansion　of　void;　PDIE　under　OSI　is　larger　than　that　under　AC　voltage　with　the　same　radius　of　void,　but　the　partial　discharge　behaviors　under　OSI　are　more　active　(relatively　lager　number　of　pulses　and　magnitude)　and　show　a　rapidly　rising　trend.　In　addition,　a　partial　discharge　model　considering　charge　memory　effect　and　Monte　Carlo　stochastic　process　is　established.　The　results　of　the　first　discharge　delay　and　the　statistical　distribution　of　the　pulses　were　well　explained　and　described　by　simulation.　©　2019,　Electrical　Technology　Press　Co.　Ltd.　All　right　reserved.