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Author:

Li Shuang (Li Shuang.) | Wang Jianguo (Wang Jianguo.) | Wang Dongyang (Wang Dongyang.)

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Abstract:

To increase the generation efficiency of the terahertz wave in the Y band, the idea of dual-reflector is introduced in the relativistic surface wave oscillator (SWO) with large oversized structures. The dual-reflector and the slow-wave structure (SWS) construct a resonator where the field strength of TM<sub>01</sub> mode inside is intensively enhanced and then the efficiency is increased. The pre-modulation on electron beam caused by the reflector is also helpful in improving the output power. Meanwhile, the reflector can reduce the loss of negatively going electrons. Through the particle-in-cell (PIC) simulations, the optimized structure is tested to be stable and little power is transmitting back to the diode area. The output power reaches 138 MW in the perfectly electrical conductivity condition and the frequency is 337.7 GHz with a pure spectrum. The device's efficiency is increased from 10.7% to 16.2%, compared with the device without any reflectors. The performance of device with lossy material is also focused on. In the situation of copper device, the output power is about 41 MW under the same input conditions and the corresponding efficiency is about 4.8%.

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Author Community:

  • [ 1 ] [Li Shuang;Wang Dongyang]Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, P. O. Box 69-1, Xi'an, 710024, China.
  • [ 2 ] [Wang Jianguo]Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, P. O. Box 69-1, Xi'an, 710024, China. wanguiuc@mail.xjtu.edu.cn.
  • [ 3 ] [Wang Jianguo]Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an, 710049, China. wanguiuc@mail.xjtu.edu.cn.

Reprint Author's Address:

  • [Wang, Jianguo]Northwest Inst Nucl Technol, Sci & Technol High Power Microwave Lab, POB 69-1, Xian 710024, Peoples R China;;[Wang, Jianguo]Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Peoples R China;;

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Source :

Scientific reports

ISSN: 2045-2322

Year: 2020

Issue: 1

Volume: 10

Page: 336

4 . 3 7 9

JCR@2020

4 . 3 7 9

JCR@2020

ESI Discipline: MULTIDISCIPLINARY;

ESI HC Threshold:177

JCR Journal Grade:4

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 6

SCOPUS Cited Count: 17

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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