Development of GaN Power IC Platform and All GaN DC-DC Buck Converter IC - Details

Author：

Indexed by：

EI Download Full text

Abstract：

In　this　paper,　the　GaN　power　IC　platform　is　developed　based　on　Au-free　AlGaN/GaN　MIS-HEMTs　and　a　constant-output-ripple　all　GaN　DC-DC　buck　converter　IC　is　firstly　realized　with　integrated　gate　driver,　pulse　width　modulation　(PWM)　feedback　control　and　over-current　protection　(OCP)　circuits.　The　fabricated　all　GaN　integrated　DC-DC　buck　converter　can　realize　stable　10　V　output　with　constant　output　ripples　when　input　voltage　varies　from　15　to　30　V.　The　output　and　ripples　remain　stable　with　varying　load　resistance.　When　subjected　to　over-current　incident,　the　fabricated　power　IC　can　be　protected　according　to　desired　over-current　threshold　values.　The　experiment　results　have　demonstrated　the　functionality　and　feasibility　of　all　GaN　power　ICs　in　power　conversion　applications.　©　2019　IEEE.

Keyword：

Aluminum gallium nitride DC-DC converters Electric inverters Gallium nitride Gold compounds High electron mobility transistors III-V semiconductors Integration Power integrated circuits Pulse width modulation Timing circuits Voltage control Wide band gap semiconductors

Author Community：

[ 1 ] [Sun, Ruize]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu; 610054, China; Department of Electrical and Computer Engineering, National University of Singapore, 117580, Singapore; National University of Singapore (Suzhou) Research Institute, Suzhou; 215123, China
[ 2 ] [Liang, Y.C.]Department of Electrical and Computer Engineering, National University of Singapore, 117580, Singapore; National University of Singapore (Suzhou) Research Institute, Suzhou; 215123, China
[ 3 ] [Yeo, Yee-Chia]Department of Electrical and Computer Engineering, National University of Singapore, 117580, Singapore
[ 4 ] [Zhao, Cezhou]Department of Electrical and Electronic Engineering, Xi'An Jiaotong-Liverpool University, Suzhou; 215123, China
[ 5 ] [Chen, Wanjun]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu; 610054, China
[ 6 ] [Zhang, Bo]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu; 610054, China

Reprint Author's Address：

[Sun, Ruize]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu; 610054, China;;[Sun, Ruize]Department of Electrical and Computer Engineering, National University of Singapore, 117580, Singapore;;[Sun, Ruize]National University of Singapore (Suzhou) Research Institute, Suzhou; 215123, China;;

Email：

sun.ruize@u.nus.edu

Show more details

Related Keywords：

All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs
2020，IEEE Journal of Emerging and Selected Topics in Power Electronics
Monolithically Integrated PWM Circuit Based on AlGaN/GaN MIS-HMETs for All-GaN Smart Power System
2021，14th IEEE International Conference on ASIC, ASICON 2021
Design and Experimental Demonstration of Integrated Over-Current Protection Circuit for GaN DC-DC Converters
2020，IEEE Journal of Emerging and Selected Topics in Power Electronics
A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits
2023，IEEE Electron Device Letters

Source ：

ISSN： 1063-6854

Year： 2019

Volume： 2019-May

Page： 271-274

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 17

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 16

Affiliated Colleges：

学院待认领

Get Fulltext

DOI Library Discovery Baidu Scholar Search

Type
Departments

All Years Choose Year From to