AlGaN/GaN　metal-insulator-semiconductor　high　electron　mobility　transistors　(MIS-HEMTs)　have　superior　advantages　like　low　leakage　current　and　large　gate　swing.　To　fully　use　those　advantages,　this　paper　proposes　a　monolithic　sawtooth　generator　circuit,　which　can　generate　a　100　kHz　sawtooth　waveform　with　a　peak-to-peak　voltage　of　around　3.5　V　under　10　V　power　supply.　The　integrated　circuit　is　calibrated　and　simulated　by　Advanced　Design　System　(ADS).　Good　agreement　between　simulations　and　experimental　results　indicates　the　feasibility　of　GaN　MIS-HEMTs　on　high　power　electronics　application.　©　2019　IEEE.