Effects of Tolerance Fabrication of Extended Interaction Oscillator Based on Pseudospark-sourced Sheet Electron Beam at 0.35 THz - Details

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Abstract：

A　practical　numerical　approach　to　the　analysis　of　the　effects　of　tolerances　fabrication　on　the　performance　of　a　planar　0.35　THz　extended　interaction　oscillator　(EIO)　is　presented.　The　planar　EIO　is　to　be　driven　by　pseudospark-sourced　sheet　electron　beam.　The　influence　of　tolerance　on　the　Q-value,　resonance　frequency,　characteristic　impedance　is　demonstrated　using　an　effective　value　of　conductivity　of　1.1　×　107　S/m　to　take　into　account　the　skin　depth　and　surface　roughness.　The　method　of　Wire　Electrical　Discharge　Machining　(WEDM)　is　proposed　to　manufacture　the　0.35　THz　EIO　because　of　its　precision　and　moderate　cost　compared　with　other　manufacturing　methods　such　as　high　speed　micro　machining,　Deep　Reactive　Ion　Etching　(DRIE)　or　Ultra　Violet　Lithographie,　Galvanik,　and　Abformung　(UV　LIGA).　©　2019　IEEE.

Keyword：

Electric discharge machining Electric discharges Electron beams Fabrication Micromachining Millimeter waves Surface roughness Terahertz waves

Author Community：

[ 1 ] [Xie, Jie]Department of Physics, SUPA, University of Strathclyde, Glasgow, Scotland; G4 0NG, United Kingdom; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu; 610054, China
[ 2 ] [Yin, H.]Department of Physics, SUPA, University of Strathclyde, Glasgow, Scotland; G4 0NG, United Kingdom
[ 3 ] [Zhang, L.]Department of Physics, SUPA, University of Strathclyde, Glasgow, Scotland; G4 0NG, United Kingdom
[ 4 ] [Ronald, K.]Department of Physics, SUPA, University of Strathclyde, Glasgow, Scotland; G4 0NG, United Kingdom
[ 5 ] [Phelps, A.D.R.]Department of Physics, SUPA, University of Strathclyde, Glasgow, Scotland; G4 0NG, United Kingdom
[ 6 ] [He, W.]College of Electronic Science and Technology, Shenzhen University, Shenzhen; 518060, China
[ 7 ] [Shu, G.]College of Electronic Science and Technology, Shenzhen University, Shenzhen; 518060, China
[ 8 ] [Zhao, J.]High Voltage Division, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
[ 9 ] [Chen, X.]Department of Electronic Engineering, Queen Mary University of London, London; E1 4NS, United Kingdom
[ 10 ] [Alfadhl, Y.]Department of Electronic Engineering, Queen Mary University of London, London; E1 4NS, United Kingdom
[ 11 ] [Zhang, J.]Department of Electronic Engineering, Queen Mary University of London, London; E1 4NS, United Kingdom
[ 12 ] [Cross, A.W.]Department of Physics, SUPA, University of Strathclyde, Glasgow, Scotland; G4 0NG, United Kingdom

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Year： 2019

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 0

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电气工程学院高电压与绝缘技术系

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