The　robustness　of　4H-SiC　Schottky　barrier　diode　(SBD)　operating　under　extreme　temperature　conditions　has　become　a　critical　issue　for　cryogenic　and　high　temperature　power　conversion　application.　In　this　paper,　the　temperature　dependence　of　static　and　dynamic　performance　for　1.2　kV　4H-SiC　SBD　is　systematically　characterized　over　temperature　range　of　90　K　to　478　K.　Firstly,　the　forward　characteristics　(reverse　characteristics)　are　characterized　to　evaluate　the　forward　on-state　performance　(leakage　current　and　block　voltage)　over　above　temperature　range.　Secondly,　the　reverse　junction　capacitance　characterization　is　conducted　to　evaluate　the　capacitance　stored　energy　during　switching　process.　Moreover,　a　double　pulse　test　circuit　with　layout　optimization　is　used　to　characterize　the　reverse　recovery　performance,　focusing　on　three　key　performance　parameters　(including　reverse　recovery　peak　current,　reverse　recovery　charge　and　switching　energy　loss　related　with　reverse　recovery).　The　characterization　results　indicate　the　cryogenic　temperature　condition　is　more　conducive　to　present　the　advantages　of　SiC　SBD　in　high　frequency　power　conversion　system　with　high　conversion　efficiency