Deep　reactive　ion　etching　(DRIE)　technology　is　one　of　the　most　important　technologies　in　the　processing　of　microelectronic　devices　and　microelectromechanical　system.　As　a　necessary　process　in　semiconductor　integration,　it　has　been　widely　studied　in　the　past　decades.　It　is　known　that　the　traditional　DRIE　process　typically　uses　a　plasma　etching　reactor　equipped　with　inductively　coupled　plasma　(ICP)　sources　to　generate　a　high-density　plasma　so　as　to　achieve　high　aspect　ratio　trenches　with　relatively　small　roughness.　A　cryogenic　temperature　control　unit　is　typically　employed　as　well.　Here,　however,　we　use　a　parallel　plate　RIE　with　rather　simple　structure,　which　is　not　usually　used　for　DRIE,　to　obtain　high　aspect　ratio　silicon　etching.　With　no　ICP　sources　and　no　sophisticated　temperature　control　unit,　the　system　and　experiment　are　now　much　more　cost　effective.　Through　the　optimization　of　the　processing,　the　etching　rate　of　silicon　can　reach　440 nm/min.　Finally,　a　45 μm　deep　trench　is　etched　in　silicon　with　good　perpendicularity.　This　method　will　greatly　reduce　the　equipment　related　cost,　especially　for　those　applications　that　do　not　have　extremely　stringent　requirement　on　the　final　etching　accuracy.　©　2020,　Springer-Verlag　GmbH　Germany,　part　of　Springer　Nature.