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Author:

Yang, Penglu (Yang, Penglu.) | Banerjee, Sneha (Banerjee, Sneha.) | Kuang, Wenjun (Kuang, Wenjun.) | Ding, Yu (Ding, Yu.) | Ma, Quan (Ma, Quan.) | Zhang, Peng (Zhang, Peng.)

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Abstract:

Practical electrical contact edges are irregular either macroscopically due to fabrication errors or microscopically due to the nature of edge or surface roughness. However, electrical contact models typically assume ideal and regular contact geometries, where geometrical effects of the irregular electrode edges are not well characterized. This paper studies current crowding and spreading resistance of electrical contacts with irregular contact edges. Using finite element method based numerical simulations, we investigate the scaling of total resistance, spreading resistance, potential drop and current distribution for electrical contacts of tilted contact edges, with various electrode lengths a and edge angles theta. It is found that as the contact edge angle. increases, the spreading resistance and therefore the total resistance decreases. This is attributed to the increased current crowding towards the corner of the longer electrode side edge when the edge tilt increases, leading to shorter current conduction paths. For a given edge tilt angle theta, the scaling of spreading resistance with a follows closely that of zero edge angle theta = 0: the spreading resistance decreases with a when a/h < 1 and then converges to a constant when a/h > 1, where h is the thickness of the conductor. The current density distribution near the electrical contacts are shown for different edge angles theta.

Keyword:

contact resistance current crowding irregular contact spreading resistance

Author Community:

  • [ 1 ] [Yang, Penglu]Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA
  • [ 2 ] [Banerjee, Sneha]Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA
  • [ 3 ] [Zhang, Peng]Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA
  • [ 4 ] [Kuang, Wenjun]Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Ctr Adv Mat Performance Nanoscale CAMP Nano, Xian 710049, Peoples R China
  • [ 5 ] [Ding, Yu]Lam Res, Tualatin, OR 97062 USA
  • [ 6 ] [Ma, Quan]Lam Res, Tualatin, OR 97062 USA

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Source :

JOURNAL OF PHYSICS D-APPLIED PHYSICS

ISSN: 0022-3727

Year: 2020

Issue: 48

Volume: 53

3 . 2 0 7

JCR@2020

3 . 2 0 7

JCR@2020

ESI Discipline: PHYSICS;

ESI HC Threshold:54

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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