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Author:

Qi, Jinwei (Qi, Jinwei.) | Tian, Kai (Tian, Kai.) | Mao, Zhangsong (Mao, Zhangsong.) | Yang, Song (Yang, Song.) | Song, Wenjie (Song, Wenjie.) | Zhang, Anping (Zhang, Anping.)

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Abstract:

The robustness of SiC MOSFET body diode under extreme operating condition such as cryogenic and high temperatures becomes a crucial factor for high power/efficiency applications. In this paper, the dynamic performance of 1.2kV SiC MOSFET body diodes is systematically investigated from 90K to 603K. A double pulse test setup capable of controlling temperatures from 90K to 603K is used to measure device dynamic performance and extract parameters including recovery time (trr), reverse recovery charge (Qrr), maximum reverse recovery current (Irm) and reverse recovery energy loss (Err). The effects of gate resistance and load current on device dynamic performance are also examined. © 2018 IEEE.

Keyword:

Chromium compounds Cryogenics Diodes Energy dissipation Energy gap Mechanisms Power MOSFET Power semiconductor diodes Recovery Silicon carbide Temperature distribution Wide band gap semiconductors

Author Community:

  • [ 1 ] [Qi, Jinwei]School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 2 ] [Qi, Jinwei]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 3 ] [Tian, Kai]School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 4 ] [Tian, Kai]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 5 ] [Mao, Zhangsong]School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 6 ] [Mao, Zhangsong]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 7 ] [Yang, Song]School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 8 ] [Yang, Song]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 9 ] [Song, Wenjie]School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 10 ] [Song, Wenjie]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 11 ] [Zhang, Anping]State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an; 710049, China

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Year: 2018

Page: 179-183

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 9

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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