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Author:

Wang, Dan (Wang, Dan.) | He, Yongning (He, Yongning.) | Guo, Junjiang (Guo, Junjiang.) | Cai, Yahui (Cai, Yahui.) | Mao, Zhangsong (Mao, Zhangsong.) | Ye, Ming (Ye, Ming.)

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Abstract:

Secondary electron (SE) emission (SEE) from material surfaces is a frequent phenomenon in space and vacuum environments. SEE modulation is important since it governs the performance of some devices such as electronic multipliers or induces some detrimental effects such as multipactors. Surface coating has been reported to modulate SEE effectively, whereas SEE behaviors of coating structures are not clearly understood yet, and the appropriate theory to describe SEE characteristics quantitatively for coating structures is less developed so far. Here, we have prepared four alumina coatings possessing various thicknesses to research the SEE characteristics of coating structures and have shown how the coating thickness affects the SEE behaviors. Besides, by considering coating/substrate as an ideal double-layer structure, we have derived several equations to describe the producing, transmitting, and escaping processes of excited inner SEs and finally constructed a unidimensional SEE model for double-layer structures. The model is applicable to reveal the dependence of trueSE yield (TSEY) on the top and bottom layers' physical properties and estimate TSEY proportions contributed by the top and bottom layers at random energy points. By employing the concept, SEE characteristics of Al2O3/Si, MgO/Si, and TiO2/Si double-layer structureshave been quantitatively interpreted. Moreover, the abnormal SEY curve with a double-hump shape, which is induced by the peak position distinction of SiO2/Si structures, can also be explained. This work is of great significance to comprehend TSEY modulating regularities of various double-layer structures applied in surface engineering. © 2021 Author(s).

Keyword:

Alumina Aluminum oxide Coatings Magnesia Oxide minerals Secondary emission Silica Silicon Thickness measurement Titanium dioxide

Author Community:

  • [ 1 ] [Wang, Dan]School of Microelectronics, Xian Jiaotong University, Xian; 710049, China
  • [ 2 ] [He, Yongning]School of Microelectronics, Xian Jiaotong University, Xian; 710049, China
  • [ 3 ] [Guo, Junjiang]State Key Laboratory of Transient Optics and Photonics, Xian Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xian; 710119, China
  • [ 4 ] [Guo, Junjiang]Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Lab of Information Photonic Technique, School of Electronics and Information Engineering, Xian Jiaotong University, Xian; 710049, China
  • [ 5 ] [Guo, Junjiang]University of Chinese Academy of Sciences (UCAS), Beijing; 100049, China
  • [ 6 ] [Cai, Yahui]School of Microelectronics, Xian Jiaotong University, Xian; 710049, China
  • [ 7 ] [Mao, Zhangsong]School of Microelectronics, Xian Jiaotong University, Xian; 710049, China
  • [ 8 ] [Ye, Ming]School of Microelectronics, Xian Jiaotong University, Xian; 710049, China

Reprint Author's Address:

  • [He, Yongning]School of Microelectronics, Xian Jiaotong University, Xian; 710049, China;;

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Source :

Journal of Applied Physics

ISSN: 0021-8979

Year: 2021

Issue: 9

Volume: 129

2 . 5 4 6

JCR@2020

ESI Discipline: PHYSICS;

ESI HC Threshold:26

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 5

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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