A　Kinetic　Monte　Carlo　(KMC)　model　with　a　cluster-multiple　labeling　technique　was　proposed　to　study　the　effect　of　growth　parameters　such　as　temperature,　deposition　flux　and　Si/C　ratio　on　Si–C　clusters　in　the　initial　stage　of　SiC　(0001)　surface　nucleation.　In　this　model,　Si　and　C　atoms　were　treated　individually　and　a　crystal　lattice　was　established　to　fix　the　physical　location　of　atoms　and　interatomic　bonding.　The　adsorption　and　diffusion　of　adatoms　on　the　planar　surface,　attachment　to　and　detachment　from　clusters　of　adatoms,　and　their　diffusion　along　the　edge　of　clusters　were　considered　in　the　KMC　model.　Cluster-multiple　labeling　technique　was　used　to　identify　Si–C　clusters　and　the　properties　of　clusters　were　analyzed.　The　results　showed　that　larger　and　less　clusters　were　constructed　on　growing　surface　with　the　increase　of　temperature　and　decrease　of　deposition　rate.　The　saturated　clusters　density　was　exponentially　related　to　the　ratio　of　effective　diffusion　capacity　to　deposition　rate,　and　the　relationship　between　saturated　density　of　clusters　and　average　growth　rate　of　clusters　was　obtained.　Finally,　Si/C　ratio　affected　the　characteristics　of　nucleation,　and　at　C-rich　condition,　the　binding　energy　of　nucleus　was　larger　than　that　at　Si-rich　condition,　leading　to　the　formation　of　fewer　but　larger　clusters.　©　2021　Elsevier　Ltd