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Author:

Yang Huijing (Yang Huijing.) | Lu Zhilun (Lu Zhilun.) | Li Linhao (Li Linhao.) | Bao Weichao (Bao Weichao.) | Ji Hongfen (Ji Hongfen.) | Li Jinglei (Li Jinglei.) | Feteira Antonio (Feteira Antonio.) | Xu Fangfang (Xu Fangfang.) | Zhang Yong (Zhang Yong.) | Sun Huajun (Sun Huajun.) | Huang Zhichao (Huang Zhichao.) | Lou Weichao (Lou Weichao.) | Song Kaixin (Song Kaixin.) | Sun Shikuan (Sun Shikuan.) | Wang Ge (Wang Ge.) | Wang Dawei (Wang Dawei.) | Reaney Ian M (Reaney Ian M.)

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Abstract:

Ceramic dielectrics are reported with superior energy storage performance for applications, such as power electronics in electrical vehicles. A recoverable energy density (Wrec) of ∼4.55 J cm-3 with η ∼ 90% is achieved in lead-free relaxor BaTiO3-0.06Bi2/3(Mg1/3Nb2/3)O3 ceramics at ∼520 kV cm-1. These ceramics may be co-fired with Ag/Pd, which constitutes a major step forward toward their potential use in the fabrication of commercial multilayer ceramic capacitors. Compared to stoichiometric Bi(Mg2/3Nb1/3)O3-doped BaTiO3 (BT), A-site deficient Bi2/3(Mg1/3Nb2/3)O3 reduces the electrical heterogeneity of BT. Bulk conductivity differs from the grain boundary only by 1 order of magnitude which, coupled with a smaller volume fraction of conducting cores due to enhanced diffusion of the dopant via A-site vacancies in the A-site sublattice, results in higher breakdown strength under an electric field. This strategy can be employed to develop new dielectrics with improved energy storage performance.

Keyword:

BaTiO3 capacitors ceramics dielectric energy storage lead-free

Author Community:

  • [ 1 ] [Yang Huijing]Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, U.K
  • [ 2 ] [Lu Zhilun]Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, U.K
  • [ 3 ] [Li Linhao]Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, U.K
  • [ 4 ] [Bao Weichao]State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Shanghai 200050, China
  • [ 5 ] [Ji Hongfen]Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, U.K
  • [ 6 ] [Li Jinglei]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China
  • [ 7 ] [Feteira Antonio]Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB, U.K
  • [ 8 ] [Xu Fangfang]State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Shanghai 200050, China
  • [ 9 ] [Zhang Yong]State Key Laboratory of Silicate Materials for Architectures, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
  • [ 10 ] [Sun Huajun]State Key Laboratory of Silicate Materials for Architectures, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
  • [ 11 ] [Huang Zhichao]Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB, U.K
  • [ 12 ] [Lou Weichao]Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB, U.K
  • [ 13 ] [Song Kaixin]College of Electronics Information, Hangzhou Dianzi University, Hangzhou 310018, China
  • [ 14 ] [Sun Shikuan]Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, U.K
  • [ 15 ] [Wang Ge]Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, U.K
  • [ 16 ] [Wang Dawei]Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, U.K
  • [ 17 ] [Reaney Ian M]Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, U.K

Reprint Author's Address:

  • [Wang, G.]Department of Materials Science and Engineering, United Kingdom;;[Wang, G.]Department of Materials Science and Engineering, United Kingdom;;

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Source :

ACS applied materials & interfaces

ISSN: 1944-8252

Year: 2020

Issue: 39

Volume: 12

Page: 43942-43949

9 . 2 2 9

JCR@2020

9 . 2 2 9

JCR@2020

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:84

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 58

SCOPUS Cited Count: 154

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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