During　the　periodical　turn-on　and　turn-off　of　the　IGBT　module,　the　voltage　across　the　IGBT　module　and　the　current　flowing　through　it　will　change　rapidly,　causing　electromagnetic　interference.　It　is　currently　an　important　issue　to　accurately　predict　and　evaluate　the　interference　of　IGBT　devices　to　surrounding　circuits　during　operation.　In　this　paper,　the　characteristics　of　the　IGBT　module　and　its　equivalent　model　are　introduced　first.　Then,　the　characteristic　parameters　of　the　IGBT　are　calculated　through　the　IGBT　data　sheet　and　the　double　pulse　test　of　the　IGBT.　And　through　the　calculated　parameters,　the　behavior　model　of　the　IGBT　and　the　diode　anti-parallel　with　the　IGBT　is　established　in　the　PSCAD　simulation　software.　By　measuring　and　analyzing　the　impedance　characteristics　of　the　module,　the　nonlinear　parameters　inside　the　IGBT　are　extracted.　Afterwards,　the　black　box　modeling　method　was　used　to　establish　a　wide-band　equivalent　model　consistent　with　the　external　characteristics　of　the　IGBT　in　the　off-state.　Finally,　the　accuracy　of　the　model　is　verified　by　comparing　with　the　results　of　the　double　pulse　test.　©　2020　IEEE.