The　traditional　condition　monitoring　(CM)　methods　for　power　electronic　devices　are　normally　using　electrical,　magnetic,　and　thermal　sensors.　Alternatively,　this　paper　uses　the　acoustic　emission　(AE)　sensor　to　measure　the　mechanical　stress　wave　generated　inside　the　power　electronic　devices　such　as　MOSFETs.　Specifically,　this　paper　focuses　on　the　influence　of　measured　surface,　electrical　parameters,　and　filters　on　the　stress　wave　signal　and　the　reliability　of　repeatability　tests.　Under　the　single　pulse　test　with　300V　drain-source　voltage　(V-ds),　the　same　acoustic　emission　sensor　is　pasted　on　the　MOSFET　package　and　the　cooling　surface　with　a　coupling　agent.　The　factors　affecting　stress　waves　are　studied　by　changing　electrical　parameters　and　filters.　The　proposed　experiments　draw　the　following　conclusions.　1)　The　characteristic　parameters　of　the　stress　wave　measured　on　the　package　and　cooling　surface　of　MOSFET　are　different　under　the　same　electrical　parameters.　2)　The　characteristic　parameters　of　the　stress　wave　are　almost　unchanged　under　the　same　test　conditions,　which　shows　that　the　stress　wave　measurement　method　is　reliable.　3)　The　peak　value　of　the　stress　wave,　the　frequency　domain　amplitude,　and　energy　are　affected　by　Vds　and　turn-on　time　(t(on)).　Specifically,　the　gate　voltage　Vgs　has　no　obvious　trend　to　the　amplitude.　The　impact　on　package　is　basically　the　same　as　the　cooling　surface.