In　this　paper,　boron-doped　dense　6H-SiC　ceramics　was　fabricated　by　the　high-temperature　physical　vapor　transport　(HTPVT)　method.　The　effect　of　B　doping　on　the　crystal　structure　stability　of　6H-SiC　was　investigated　based　on　density　functional　theory　(DFT).　The　results　show　that　B　doping　can　be　realized　even　under　thermodynamical　equilibrium　conditions.　Nevertheless,　it　is　found　that　the　B　doping　effects　on　the　(0001)　of　Si-plane　and　(000-1)　of　C-plane　are　significantly　different.　The　doping　experiments　demonstrated　that　B　can　observably　change　the　crystal　growth　morphology,　leading　to　the　formation　of　elongated　6H-SiC　crystals.　©　2021　Institute　of　Physics　Publishing.　All　rights　reserved.