Q-factor modification of LN based WGM resonator - Details

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Abstract：

We　demonstrated　a　monolithic　optical　whispering-gallery-mode　(WGM)　resonator　made　of　lithium　niobate　(LN)　single　crystal.　The　effect　of　WGM　resonator　side　roughness　on　the　quality　factor　(Q-factor)　of　resonator　was　simulated　by　finite-difference　time-domain　(FDTD)　method.　WGM　resonators　were　annealed　at　high　temperature(1050　°C)　to　improve　the　Q-factor,　and　measured　the　side　roughness　of　the　WGM　resonator　before　and　after　annealing　with　a　white　light　interference　microscope.　It　found　that　Q-factor　of　WGM　resonator　can　be　increased　by　more　than　2　orders　of　magnitude　by　thermal　treatment　at　1050　°C.　©　2021　Elsevier　B.V.

Keyword：

Annealing Finite difference time domain method Niobium compounds Q factor measurement Resonators Single crystals Surface roughness Whispering gallery modes

Author Community：

[ 1 ] [Yang, Liu]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
[ 2 ] [Zhuang, Yongyong]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
[ 3 ] [Zhao, Weigang]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
[ 4 ] [Liu, Xin]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
[ 5 ] [Hu, Qingyuan]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
[ 6 ] [Xu, Zhuo]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
[ 7 ] [Wei, Xiaoyong]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China

Reprint Author's Address：

Y. Zhuang;;Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China;;email: zhuangzhuang235@xjtu.edu.cn;;

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Source ：

Materials Letters

ISSN： 0167-577X

Year： 2021

Volume： 308

3 . 4 2 3

JCR@2020

ESI Discipline： MATERIALS SCIENCE;

ESI HC Threshold：36

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 3

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 3

Affiliated Colleges：

电子与信息工程学部（原电子与信息工程学院）精细功能电子材料与器件国家专项实验室

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