Al2O3/ZnO　nanolaminates　are　promising　nanocomposites　with　special　properties　for　the　applications　of　oxide-based　thin-film　transistors,　photoluminescence　devices,　and　pitch　grating　references.　In　this　study,　Al2O3/ZnO　nanolaminates　were　grown　at　80　°C,　120　°C,　250　°C　by　atomic　layer　deposition,　and　then　post-annealed　by　furnace　annealing　at　600　°C,　700　°C,　800　°C　respectively.　Both　the　in-situ　growth　temperature　and　post-annealing　temperature-induced　microstructures　of　Al2O3/ZnO　nanolaminates　were　examined　using　x-ray　diffraction　(XRD),　scanning　electron　microscopy　(SEM),　and　atomic　force　microscopy　(AFM).　In　addition,　the　interfacial　diffusion　and　solid-state　reaction　were　systematically　studied　by　high-resolution　transmission　electron　microscopy　(HRTEM).　The　films　grown　at　80　°C　and　250　°C　show　a　typical　polycrystalline　structure,　while　the　film　grown　at　120　°C　possesses　an　obvious　preferred　orientation.　After　post-annealing　at　700　°C,　the　spinel　ZnAl2O4　grains　are　formed　at　the　interface　of　the　Al2O3/ZnO　films　grown　at　80　°C　and　250　°C,　which　indicates　the　solid-state　reaction　has　occurred,　but　this　phenomenon　did　not　occur　for　the　films　grown　at　120　°C.　The　results　indicate　that　the　growth　temperature　not　only　affects　the　crystallinity　and　preferred　orientation　of　the　ZnO　interlayers,　but　also　the　interfacial　diffusion　and　counter-diffusion　of　atoms,　and　thereby　the　solid-state　reaction,　in　the　post-annealing　process.　So,　simultaneously　controlling　the　effects　of　the　growth　and　post-annealing　temperatures　has　great　significance　for　this　kind　of　nanolaminates.　©　2022　Elsevier　B.V.