Recently,　dielectric　energy　storage　materials　and　devices　attracted　much　research　interest　due　to　its　high-power　density　and　the　resulted　applications.　In　this　work,　relaxor　ferroelectric　(Pb1-x,Lax)(Zr0.65,Ti0.35)O3　(abbreviated　as　PLZT100X,　X　=　0.06,　0.08,　0.10　and　0.12)　thin　films　are　deposited　on　Pt/Ti/SiO2/Si　substrates　by　a　sol-gel　method,　and　temperature　stability　of　relative　dielectric　constant　as　well　as　energy　storage　density　of　the　PLZT　thin　films　with　different　level　of　La　doping　are　studied.　The　relative　dielectric　constant　of　the　PLZT10　thin　films　is　873　at　1　kHz　at　30°C,　with　maximum　of　variation　of　7.6%　in　the　temperature　range　from　30-200　°C,　which　indicates　very　high　temperature　stability.　The　energy　storage　density　of　the　PLZT　thin　films　is　38.8　J/cm3,　42.2　J/cm3,　33.5　J/cm3　and　36.0　J/cm3　with　the　La　doping　of　0.06,　0.08,　0.10　and　0.12,　respectively,　under　the　applied　electric　field　of　2840　kV/cm.　The　energy　efficiency　of　the　PLZT　thin　films　is　above　70%.　In　addition,　the　energy　storage　density　of　the　PLZT　thin　films　shows　good　temperature　stability,　with　about　20　J/cm3around　the　electric　field　of　1800　kV/cm　in　the　temperature　range　from　30-150　°C.　©　1994-2012　IEEE.