Due　to　their　low　cost,　tunable　band　gap　and　excellent　thermostability,　all-inorganic　halide　perovskites　CsPbX3　(X　=　Br,　I)　have　become　a　kind　of　promising　photovoltaic　material.　However,　compared　to　the　organic-inorganic　hybrid　perovskite　solar　cells,　the　performance　of　CsPbX3　solar　cells　still　needs　to　be　improved.　In　this　work,　for　the　first　time,　we　applied　the　sol-gel　derived　amorphous　InGaZnO4　film　as　electron　transport　layers　(ETLs)　in　CsPbX3-based　devices.　In　these　devices,　the　carbon　electrode　deposited　by　screen　printing　replaced　the　unstable　hole　transport　layer　and　the　expensive　metal　electrode　to　obtain　hole　transport　free　carbon-based　devices,　which　significantly　simplifies　the　preparation　process　and　reduces　the　production　cost.　With　the　application　of　amorphous　InGaZnO4　films,　devices　show　a　relatively　high　power　conversion　efficiency　(9.07%)　and　excellent　thermal　stability.　Compared　with　the　reported　CsPbX3　devices　using　SnO2　or　TiO2　ETLs,　the　performance　of　amorphous　InGaZnO4　based　devices　has　been　significantly　improved.　This　work　provides　a　promising　route　to　prepare　highly　thermally　stable　all-inorganic　perovskite　solar　cells　using　a-IGZO　films.