The　application　of　SiC　MOSFET　helps　improve　the　efficiency　and　power　density　of　power　electronic　converters　due　to　its　high　frequency,　high　efficiency,　and　high　temperature　advantages.　By　connecting　an　external　capacitance　Cext　in　parallel　with　the　drain　and　source　of　SiC　MOSFET,　the　soft　turn-off　switching　of　SiC　MOSFET　can　be　achieved.　However,　the　impact　of　Cext　on　the　turn-on　switching　process　of　SiC　MOSFET　is　unclear.　In　this　paper,　an　analytical　model　based　on　a　half-bridge　configuration　is　established　to　study　the　turn-on　switching　characteristics　of　SiC　MOSFET.　The　nonlinearity　of　parasitic　capacitances,　transfer　characteristic,　and　output　characteristics　are　considered　in　the　model　to　ensure　accuracy.　Besides,　the　reverse　recovery　characteristics　of　the　body　diode　as　a　freewheeling　diode　are　measured　experimentally.　Based　on　the　model,　the　effect　of　Cext　on　the　turn-on　switching　characteristics　of　SiC　MOSFET　is　deeply　analyzed.　Finally,　an　experimental　platform　is　built　to　verify　the　model.　©　2022　IEEE.