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Abstract:
Based on large cross-section single-mode rib waveguide condition, total internal reflection (TIR) and plasma dispersion effect, a silicon-on-insulator (SOI) asymmetric optical waveguide switch with transverse injection structure has been proposed and fabricated, in which the SOI technique utilizes silicon and silicon dioxide thermal bonding and hack-polishing The device performance is measured at the wavelength of 1.3 mu m. It shows that the extinction ratio and insertion loss are less than -18.1 and 6.3 dB, respectively, at an injection current of 60 mA. Response time is 110 ns.
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Source :
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN: 1041-1135
Year: 1997
Issue: 8
Volume: 9
Page: 1113-1115
1 . 6 1
JCR@1997
2 . 4 6 8
JCR@2020
ESI Discipline: PHYSICS;
JCR Journal Grade:2
CAS Journal Grade:3