Recently　electrostrictive　effect　in　ferroelectrics　has　attracted　much　attention,　since　the　electric　field-induced　strain　based　on　such　an　effect　possesses　an　ultra-low　hysteresis,　which　is　of　special　interest　to　both　fundamental　research　and　potential　application　in　high-precision　actuators.　In　this　paper,　we　propose　a　strategy　to　obtain　high　electrostrictive　properties　in　ABO3　perovskite　structure　BaTiO3　(BT)-based　ferroelectric　ceramics　by　means　of　doping.　The　doping　element,　amount,　valence　as　well　as　position　are　specified　according　to　this　strategy.　It　is　suggested　that　B-site　Sn4+-doped　BT,　i.e.,　Ba(Ti1-xSnx)O3　(BTS),　would　possess　superior　electrostrictive　properties.　The　structural　evolution　and　electrical　properties　of　BTS　ferroelectric　ceramics　were　investigated　in　detail　in　order　to　verify　this　deduction.　Besides　the　ferroelectric-to-relaxor　transition　with　respect　to　the　increase　of　x　from　0.06　to　0.11,　expected　and　high　electric　field-induced　strain　(＞　0.08%　at　40　kV/cm)　with　a　very　ultra-low　hysteresis　(＜　8%)　is　obtained　in　x　=　0.10–0.11　compositions.　High　longitudinal　electrostrictive　coefficient　Q33　ranges　from　to　0.0398　m4/C2　to　0.0515　m4/C2　accompanying　with　temperature-　and　composition-insensitive　characteristics.　These　results　not　only　prove　the　effectiveness　of　this　strategy,　but　also　pave　a　way　to　search　for　novel　kinds　of　electrostrictive　systems　in　ferroelectrics.　©　2018　Elsevier　Ltd　and　Techna　Group　S.r.l.