In　this　paper,　we　present　two　silicon-on-insulator　tunnel　field-effect　transistors　(SOI-TFETs),　referred　as　a　lateral　dual-gate　TFET　and　a lateral　triple-gate　TFET,　which　consist　of　one　or　two　vertical　thin　vertical dielectric　layers　within　the　original　front-gate　region　and　form　the　separate　dual-gate　or　triple-gate　structure.　Using　calibrated　two-dimensional　Synopsys　Sentaurus　TCAD　simulation,　we　demonstrate　that　the　proposed　novel　TFETs　have　relatively　higher　Ion　and　significantly　lower　Ioff　due　to　the　modulating　effect　of　the　multiple　gate　voltages　on　the　channel　barrier.　We　also　compare　and　analyze　improvements　in　Ion/Ioff　for　the　two　novel　SOI-TFETs　and　a　conventional　SOI-TFET. The　proposed　new　TFETs　exhibit　a　high　Ion/Ioff　ratio　of　104　~　108　for　a　channel　length　of　22 nm.　Our results　reveal　that　the　performance　of the　lateral　triple-gate　TFET is　superior to　that　of　the　dual-gate　TFET,　yielding higher　on-state　current　and　lower　off-state　current.　©　2018,　Springer-Verlag　GmbH　Germany,　part　of　Springer　Nature.