During　the　switching　performance　evaluation　for　Si-based　power　devices,　the　gate　driver　IC＇s　are　commonly　neglected　because　of　Si　device＇s　slow　switching　speed.　GaN　transistors,　with　much　smaller　intrinsic　capacitances,　would　enable　faster　switching　speed　and　higher　switching　frequency.　Consequently,　the　gate　driver　would　largely　impact　the　switching　performance　as　well　as　the　dead-time　of　the　GaN　transistor.　In　previous　works,　however,　the　gate　driver　IC　used　to　drive　GaN　transistor　have　been　ignored　in　circuit　simulation,　leading　to　lower　modeling　accuracy.　In　consideration　of　the　lack　of　gate　driver　IC＇s　critical　design　parameters,　along　with　less　familiarity　of　power　electronics　engineer/researcher　with　the　semiconductor　technologies,　the　gate　driver　IC　could　be　regarded　as　a　＂black-box＂.　Despite　the　difficulty　in　directly　performing　measurements　inside　the　driver　chip　package,　a　black-box　modeling　method　could　be　proposed.　Based　on　the　measured　terminal　current/voltage　signals　in　a　typical　gate　drive　scheme,　the　I-V　characteristics　of　the　PMOS　in　the　totem-pole　topology　could　be　extracted.　With　respect　to　the　C-V　curves,　the　characteristics　of　a　discrete　Si　MOSFET　with　comparable　voltage/current　rating　could　be　introduced.　Taking　into　account　the　operating　principle　of　the　totem-pole　topology,　a　circuit-level　model　could　be　established.　Consequently,　the　simulated　waveforms　are　in　reasonable　agreements　with　the　testing　results.　Taking　advantages　of　the　proposed　black-box　modeling　method,　the　switching　transient　waveforms　as　well　as　the　dead-time　of　GaN　transistor　could　be　more　accurately　evaluated.