The　nitrogen　vacancy　(NV)　center　distribution　in　epitaxial　lateral　overgrowth　(ELO)　single　crystal　diamond　layer　grown　on　tungsten　patterned　HPHT　substrate　by　microwave　plasma　chemical　vapor　deposition　(CVD)　system　has　been　investigated.　It　has　been　found　that　in　ELO　diamond　layer　densities　of　NV0　and　NV　center　above　the　tungsten　metal　are　enhanced.　Meanwhile,　in　patterned　high-pressure　and　high-temperature　(HPHT)　substrate　the　density　of　NV　center　beneath　the　tungsten　metal　is　much　higher　than　that　of　NV0.　The　HPHT　substrate　does　not　contain　NV　centers　before　CVD　growth,　and　there　is　almost　no　NV　center　in　the　region　without　tungsten　metal　after　growth.　(C)　2019　Elsevier　B.V.　All　rights　reserved.