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Abstract:
The properties of BaO/MgO-type interface in the BaZrO3/MgO(001) heterostructure are studied by aberration-corrected high-resolution transmission electron microscopy combined with first-principles calculations. Experimental evidence demonstrates that cation displacement and vacancies occur at the interface. Our first-principle calculations show that cation displacement results from the electrostatic potential effect at the interface, and cation vacancies could lower the interfacial work of separation and enhance the interfacial stability of BaO/MgO-type interface. The results highlight that the effect of interfacial defects should be taken into account in understanding the film growth kinetics and properties in oxide heteroepitaxy.
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JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN: 1005-0302
Year: 2015
Issue: 2
Volume: 31
Page: 205-209
2 . 2 6 7
JCR@2015
8 . 0 6 7
JCR@2020
ESI Discipline: MATERIALS SCIENCE;
ESI HC Threshold:265
JCR Journal Grade:2
CAS Journal Grade:2
Cited Count:
WoS CC Cited Count: 2
SCOPUS Cited Count: 2
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 9
Affiliated Colleges: