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Author:

Li Shuang (Li Shuang.) | Chang Chao (Chang Chao.) | Wang Jian-Guo (Wang Jian-Guo.) | Liu Yan-Sheng (Liu Yan-Sheng.) | Zhu Meng (Zhu Meng.) | Guo Le-Tian (Guo Le-Tian.) | Xie Jia-Ling (Xie Jia-Ling.)

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SCIE EI Scopus CSCD PKU

Abstract:

To suppress the secondary electron multipactor on dielectric surfaces of a dielectric load accelerator under an electromagnetic field in TM mode, the method of adopting both groove structure and external axial magnetic field is introduced. As the electric field distribution of the TM mode is composed of both normal and tangential components, it is different from that under the condition of dielectric window in HPM. Thus, theoretical analysis and numerical simulation are employed to study the movement of electrons under different conditions: such as dielectric surface shapes, electric field strength, and magnetic field strength etc. Based on the particle-in-cell (PIC) simulation, the collision energy and transmit-duration of secondary electrons in different groove structures and axial magnetic fields are compared with one another. Results show that the magnetic field is useful for suppressing the development of secondary electron on dielectric surface, while it is not very efficient under high electric field strength. The method of introducing groove structure and certain axial magnetic field on dielectric surface at the same time is capable of affecting the movement of electrons in electric field of different strength. So it is great helpful in improving the ability of multipactor suppression, which is significant for improving the threshold of breakdown on dielectric surface and the power of cavity. However, a too high or too low magnetic field is not very useful for the suppression of multipactor. Furthermore, employing only one of the two parts of the method is also less effective in suppressing the multipactor.

Keyword:

breakdown dielectric load accelerator secondary electron multipactor TM mode

Author Community:

  • [ 1 ] [Li Shuang; Chang Chao; Wang Jian-Guo; Liu Yan-Sheng; Zhu Meng; Guo Le-Tian; Xie Jia-Ling] Northwest Inst Nucl Technol, Sci & Technol High Power Microwave Lab, Xian 710024, Peoples R China
  • [ 2 ] [Li Shuang; Wang Jian-Guo] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China
  • [ 3 ] [Chang Chao] Xi An Jiao Tong Univ, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China
  • [ 4 ] [Li Shuang]Northwest Inst Nucl Technol, Sci & Technol High Power Microwave Lab, Xian 710024, Peoples R China
  • [ 5 ] [Chang Chao]Northwest Inst Nucl Technol, Sci & Technol High Power Microwave Lab, Xian 710024, Peoples R China
  • [ 6 ] [Wang Jian-Guo]Northwest Inst Nucl Technol, Sci & Technol High Power Microwave Lab, Xian 710024, Peoples R China
  • [ 7 ] [Liu Yan-Sheng]Northwest Inst Nucl Technol, Sci & Technol High Power Microwave Lab, Xian 710024, Peoples R China
  • [ 8 ] [Zhu Meng]Northwest Inst Nucl Technol, Sci & Technol High Power Microwave Lab, Xian 710024, Peoples R China
  • [ 9 ] [Guo Le-Tian]Northwest Inst Nucl Technol, Sci & Technol High Power Microwave Lab, Xian 710024, Peoples R China
  • [ 10 ] [Xie Jia-Ling]Northwest Inst Nucl Technol, Sci & Technol High Power Microwave Lab, Xian 710024, Peoples R China
  • [ 11 ] [Li Shuang]Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China
  • [ 12 ] [Wang Jian-Guo]Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China
  • [ 13 ] [Chang Chao]Xi An Jiao Tong Univ, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China

Reprint Author's Address:

  • Northwest Inst Nucl Technol, Sci & Technol High Power Microwave Lab, Xian 710024, Peoples R China.

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Source :

ACTA PHYSICA SINICA

ISSN: 1000-3290

Year: 2015

Issue: 13

Volume: 64

0 . 6 7 7

JCR@2015

0 . 8 1 9

JCR@2020

ESI Discipline: PHYSICS;

ESI HC Threshold:157

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count: -1

Chinese Cited Count: -1

30 Days PV: 0

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