Thin　films　of　lead-free　piezoelectric　0.95Na(0.5)Bi(0.5)TiO(3)-0.05BaTiO(3)　(0.95NBTe0.05BT)　are　epitaxially　grown　on　single　crystalline　SrTiO3　(001)　substrates　at　800　degrees　C,　850　degrees　C　and　900　degrees　C,　respectively,　by　a　highpressure　sputtering　deposition　technique.　The　microstructure　of　the　thin　films　is　investigated　by　means　of　aberration-corrected　scanning　transmission　electron　microscopy.　Planar　defects　are　observed　and　the　density　of　the　defects　increases　with　the　increase　of　the　film-growth　temperature.　Two　types　of　planar　defects　in　the　films　are　studied　at　the　atomic　scale.　One　consists　of　groups　of　edge-sharing　TiO6　octahedra　with　Bi　atoms　located　between　the　TiO6　octahedral　groups,　and　the　other　exists　in　the　form　of　Na/Bi(Ba)-O-2-Na/Bi(Ba)　layer　parallel　to　the　(010)　plane　of　the　films.　Based　on　the　structure　feature　of　the　planar　defects,　the　propagation　of　the　planar　defects　related　to　edge-sharing　TiO6　octahedra　within　the　films　and　from　the　film-substrate　interface　is　discussed.　Furthermore,　the　ordering　of　the　planar　defects　is　expected　to　form　new　structures.　In　comparison　with　the　microstructure　of　0.95NBT-0.05BT　bulk　materials,　the　appearance　of　the　high-density　planar　defects　observed　within　the　films　could　be　considered　to　be　responsible　for　the　difference　in　the　physical　properties　between　the　bulk　materials　and　the　films.　(C)　2016　Elsevier　B.V.　All　rights　reserved.