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Author:

Fan, Shiquan (Fan, Shiquan.) | Li, Haiqi (Li, Haiqi.) | Guo, Zhuoqi (Guo, Zhuoqi.) | Geng, Li (Geng, Li.)

Indexed by:

SCIE EI Scopus

Abstract:

Cadmium zinc telluride detectors are the highly considered for room-temperature hard X-ray and gamma-ray detection. The readout systems are needed in the detectors to output the detecting data. The features of power supplies are very important for the readout circuits. In this paper, a low-dropout (LDO) regulator with very low power consumption and wide load variation is presented. A combining compensation method which includes partially controlled load-tracking technique and equivalent series resistance compensation technique are proposed to enhance the loop stability of the LDO regulator. Meanwhile, high dc gain is obtained to improve the power supply ripple rejection (PSRR), which can decrease the noise from the power supply. The prototype LDO chip has been fabricated and tested with a standard 0.18-mu m CMOS technology. The measured results show that the LDO regulator can provide up to 150 mA load current with a stable output voltage of 2.8 V under an input voltage scope from 2.9 to 3.6 V. The measured PSRR is up to -60 dB. The output noise spectral densities are 1.16 mu V-RMS/root Hz and 211 nV(RMS)/root Hz at 1 and 100 kHz, respectively, at load current of 150 mA. Especially, the ultralow quiescent currents of 5.2 mu A at no load and 18.2 mu A at full load bring great benefit to the ultralow power integrated readout systems.

Keyword:

Cadmium zinc telluride (CZT) detector high stability low-dropout (LDO) regulator power management readout circuit ultralow quiescent current

Author Community:

  • [ 1 ] [Fan, Shiquan; Li, Haiqi; Guo, Zhuoqi; Geng, Li] Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China
  • [ 2 ] [Li, Haiqi] GalaxyCore Inc, Shanghai 201203, Peoples R China
  • [ 3 ] [Fan, Shiquan]Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China
  • [ 4 ] [Li, Haiqi]Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China
  • [ 5 ] [Guo, Zhuoqi]Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China
  • [ 6 ] [Geng, Li]Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China
  • [ 7 ] [Li, Haiqi]GalaxyCore Inc, Shanghai 201203, Peoples R China

Reprint Author's Address:

  • Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China.

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Source :

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ISSN: 0018-9499

Year: 2017

Issue: 4

Volume: 64

Page: 1087-1094

1 . 4 4

JCR@2017

1 . 6 7 9

JCR@2020

ESI Discipline: PHYSICS;

ESI HC Threshold:120

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 10

SCOPUS Cited Count: 16

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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