6H-SiC　(0001)　monocrystal　substrates　were　implanted　with　20　keV　Pd　ions　at　three　doses　of　5　x　10(15),　5　x　10(16)　and　5　x　10(17)　ions/cm(2)　at　room　temperature.　The　surface　characteristics　of　Pd-implanted　SiC　substrates　were　analyzed　by　Monte　Carlo　simulation　software　SRIM-2008　and　Raman　spectroscopy.　The　effects　of　the　Pd　ion　implantation　into　the　monocrystal　substrate　and　of　the　Si　additions　(4.8,　11.6,　19.4　and　29.2　at.%)　into　Al　on　wettability　of　AI/6H-SiC　system　were　investigated　using　the　sessile　drop　technique　in　a　high　vacuum　at　1323　K,　and　the　surface　and　interfacial　behaviors　were　analyzed　and　discussed.　The　experimental　results　showed　that　the　equilibrium　contact　angle　of　Al/SiC　system　increased　with　increasing　Pd　implantation　dose,　which　can　be　mainly　attributed　to　the　decreasing　interfacial　interactions　between　the　Al　drop　and　the　SiC　substrate.　However,　the　Si　concentration　had　an　opposite　effect　on　the　wettability　of　Al/SiC　system　when　the　Si　concentration　was　higher　or　less　than　the　equilibrium　Si　content　of　Al-Si/SiC　system,　which　can　be　related　to　the　variation　of　crsi,　of　Al-Si/SiC　system　with　the　Si　content.