In　this　study,　diamond　pseudo-vertical　architecture　Schottky　barrier　diodes　(PVSBDs)　through　the　patterning　tungsten　growth　method　have　been　investigated.　The　forward　current　density　is　16A/cm(2)　at　5V,　and　a　rectification　ratio　is　more　than　5　orders　of　magnitude　at　+/-　5V　for　diamond　PVSBD.　The　reverse　breakdown　voltage　is　640　V,　and　the　corresponding　electrical　field　is　4.57MV/cm.　These　results　are　obtained　by　patterning　tungsten　(W)　on　the　diamond　surface　as　a　blocking　layer　and　growing　a　diamond　epitaxial　layer　on　the　uncovered　zone.　A　W/diamond　ohmic　contact　was　formed　during　the　diamond　epitaxial　layer　growth　process.　An　aluminum　film　was　used　as　a　Schottky　contact.　Overall,　the　results　illustrate　that　W　patterned　growth　to　fabricate　PVSBD　is　efficient.　Published　by　AIP　Publishing.