Voltage　control　of　perpendicular　magnetic　anisotropy　(PMA)　in　ferromagnetic/ferroelectric　multiferroic　heterostructures　is　a　promising　method　to　enable　high　density　and　low　power　perpendicular　magnetic　information　storage.　In　this　study,　we　successfully　achieved　large　voltage　tuning　of　PMA　at　room　temperature　in　(Co/Pt)(3)/Pb(Zn1/3Nb2/3)-PbTiO3　(PZN-PT)　multiferroic　heterostructures.　Voltage　tuning　of　magnetic　anisotropy　and　the　magnetoelectric　coupling　effect　has　been　qualitatively　studied　by　ferromagnetic　resonance,　and　the　multiferroic　heterostructure　could　be　reversibly　flipped　between　two　distinct　PMA　states　under　zero　or　high　electric　fields.　During　the　linear　piezo-strain　response　of　PZN-PT,　the　multiferroic　heterostructures　exhibit　small　magnetoelectric　coupling　and　the　electric　field-induced　magnetic　anisotropy　field　was　about　295　Oe.　During　the　electric　field-induced　phase　transition　of　PZN-PT,　voltage　tuning　of　PMA　enhanced　more　than　two　times　that　of　the　first　linear　region　and　the　electric　field-induced　magnetic　anisotropy　field　increased　to　634　Oe.　Finally,　this　magnetoelectric　coupling　was　enhanced　to　672　Oe　by　applying　12　kV/cm,　corresponding　to　a　large　magnetoelectric　coupling　coefficient　up　to　56　Oe　cm/kV.　Benefiting　from　the　giant　strain　response　during　voltage-induced　phase　transition　in　PZN-PT,　voltage　tuning　of　PMA　in　those　multiferroic　heterostructures　is　a　promising　candidate　for　power-efficient　magnetic　memories.　Published　by　AIP　Publishing.