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Author:

Wu Yifei (Wu Yifei.) | Ren Zhigang (Ren Zhigang.) | Feng Ying (Feng Ying.) | Li Mei (Li Mei.) | Zhang Hantian (Zhang Hantian.)

Indexed by:

SCIE EI Scopus CSCD

Abstract:

The behavior of fault arc in a high-speed switch (HSS) has been studied theoretically and experimentally. A simplified HSS setup is designed to support this work. A two-dimensional arc model is developed to analyze the characteristics of fault arc based on magnetic-hydrodynamic (MHD) theory. The advantage of such a model is that the thermal transfer coefficient can be determined by depending on the numerical method alone. The influence of net emission coefficients (NEC) radiation model and P1 model on fault arc is analyzed in detail. Results show that NEC model predicts more radiation energy and less pressure rise without the re-absorption effect considered. As a consequence, P1 model is more suitable to calculate the pressure rise caused by fault arc. Finally, the pressure rise during longer arcing time for different arc currents is predicted.

Keyword:

fault arc high-speed switch pressure rise radiation

Author Community:

  • [ 1 ] [Wu Yifei; Ren Zhigang; Li Mei; Zhang Hantian] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
  • [ 2 ] [Feng Ying] China Elect Power Res Inst, Beijing 100192, Peoples R China
  • [ 3 ] [Wu Yifei]Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
  • [ 4 ] [Ren Zhigang]Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
  • [ 5 ] [Li Mei]Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
  • [ 6 ] [Zhang Hantian]Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
  • [ 7 ] [Feng Ying]China Elect Power Res Inst, Beijing 100192, Peoples R China

Reprint Author's Address:

  • Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China.

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Source :

PLASMA SCIENCE & TECHNOLOGY

ISSN: 1009-0630

Year: 2016

Issue: 3

Volume: 18

Page: 299-304

0 . 8 3

JCR@2016

1 . 5 6 7

JCR@2020

ESI Discipline: PHYSICS;

ESI HC Threshold:140

JCR Journal Grade:4

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count: -1

Chinese Cited Count: -1

30 Days PV: 1

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