The　properties　of　carbon　doped　InxGa1-xAs(x=0-0.98)　grown　by　MOMBE　using　TMG,　solid　In　and　solid　As　were　studied　systematically.　It　is　shown　that　the　growth　rate,　indium　mole　fraction　x　and　carrier　concentration　of　the　samples　are　strongly　affected　by　the　growth　temperature　and　indium　pressure-equivalent　beam　flux.　The　hole　concentration　decreases　with　increasing　indium　mole　fraction　in　the　range　of　x=0-0.8,　and　the　conduction　type　becomes　n-type　when　x　is　higher　than　0.8.　The　mechanism　of　carbon　incorporation　in　InxGa1-xAs　grown　by　MOMBE　and　its　influence　on　carrier　concentration　and　conduction　type　were　discussed　according　to　the　experimental　results.　The　quality　of　the　epitaxial　layers　was　analysed　by　X-ray　diffraction(XRD)　and　photoluminescence　(PL).