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学者姓名:鲁广昊

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Achieving High Doping Concentration by Dopant Vapor Deposition in Organic Solar Cells. PubMed SCIE
期刊论文 | 2019 , 11 (4) , 4178-4184 | ACS applied materials & interfaces
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Abstract :

Compared with the interfacial doping, molecular doping in bulk heterojunction (BHJ) is a more direct but challenging approach to optimize the photovoltaic performance in organic solar cells (OSCs). One of the main obstacles for its success is the low doping concentration because of the morphological damage. Starting from the phase diagram analysis, we discover that the unpreferred good miscibility between the p-type dopant and the acceptor leads to incorrect dopant dispersion, which reduces the achievable doping content. To overcome this, we use sequential doping by vapor annealing instead of blend solution doping, and we achieve the high doping concentration without sacrificing the blend film morphology. Benefiting from the undamaged film, we fulfill improved photovoltaic performance. Our positive results reveal the feasibility of high-level doping in complex organic BHJ films. It is believed that doping at high concentration potentially enlarges the extent of tunable range on electronic properties in OSCs and indicates greater improvement for device performance.

Keyword :

vapor doping organic solar cell Lewis acid doping sequential doping doped morphology high doping concentration

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GB/T 7714 Yan Han , Tang Yabing , Meng Xiangyi et al. Achieving High Doping Concentration by Dopant Vapor Deposition in Organic Solar Cells. [J]. | ACS applied materials & interfaces , 2019 , 11 (4) : 4178-4184 .
MLA Yan Han et al. "Achieving High Doping Concentration by Dopant Vapor Deposition in Organic Solar Cells." . | ACS applied materials & interfaces 11 . 4 (2019) : 4178-4184 .
APA Yan Han , Tang Yabing , Meng Xiangyi , Xiao Tong , Lu Guanghao , Ma Wei . Achieving High Doping Concentration by Dopant Vapor Deposition in Organic Solar Cells. . | ACS applied materials & interfaces , 2019 , 11 (4) , 4178-4184 .
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Dark Current Reduction Strategy via a Layer-By-Layer Solution Process for a High-Performance All-Polymer Photodetector. PubMed SCIE
期刊论文 | 2019 | ACS applied materials & interfaces
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Abstract :

The ideal bulk-heterojunction for high-performance organic photodetectors prefers a morphology with a vertically gradient component to suppress the leaking current. Here, we demonstrate an all-polymer photodetector with a segregated bulk-heterojunction active layer. This all-polymer photodetector exhibits a dramatically reduced dark current density because of its built-in charge blocking layer, with a responsivity of 0.25 A W<sup>-1</sup> at a wavelength of approximately 600 nm and specific detectivity of 5.68 × 10<sup>12</sup> cm Hz<sup>1/2</sup> W<sup>-1</sup> as calculated from the noise spectra at 1 kHz. To our knowledge, this is among the best performances reported for photodetectors based on both polymeric donor and acceptor in the photoactive layer. These findings present a facile approach to improving the specific detectivity of polymer photodetectors via a layer-by-layer solution process.

Keyword :

noise spectral density gradient bulk heterojunction layer-by-layer process imide functionalized benzotriazole all-polymer photodetector

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GB/T 7714 Zhong Zhiming , Bu Laju , Zhu Peng et al. Dark Current Reduction Strategy via a Layer-By-Layer Solution Process for a High-Performance All-Polymer Photodetector. [J]. | ACS applied materials & interfaces , 2019 .
MLA Zhong Zhiming et al. "Dark Current Reduction Strategy via a Layer-By-Layer Solution Process for a High-Performance All-Polymer Photodetector." . | ACS applied materials & interfaces (2019) .
APA Zhong Zhiming , Bu Laju , Zhu Peng , Xiao Tong , Fan Baobing , Ying Lei et al. Dark Current Reduction Strategy via a Layer-By-Layer Solution Process for a High-Performance All-Polymer Photodetector. . | ACS applied materials & interfaces , 2019 .
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Reconstructing Space- and Energy-Dependent Exciton Generation in Solution-Processed Inverted Organic Solar Cells EI SCIE PubMed Scopus
期刊论文 | 2018 , 10 (16) , 13741-13747 | ACS APPLIED MATERIALS & INTERFACES
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Abstract :

Photon absorption-induced exciton generation plays an important role in determining the photovoltaic properties of donor/acceptor organic solar cells with an inverted architecture. However, the reconstruction of light harvesting and thus exciton generation at different locations within organic inverted device are still not well resolved. Here, we investigate the film depth-dependent light absorption spectra in a small molecule donor/acceptor film. Including depth-dependent spectra into an optical transfer matrix method allows us to reconstruct both film depth- and energy-dependent exciton generation profiles, using which short-circuit current and external quantum efficiency of the inverted device are simulated and compared with the experimental measurements. The film depth-dependent spectroscopy, from which we are able to simultaneously reconstruct light harvesting profile, depth-dependent composition distribution, and vertical energy level variations, provides insights into photovoltaic process. In combination with appropriate material processing methods and device architecture, the method proposed in this work will help optimizing film depth-dependent optical/electronic properties for high-performance solar cells.

Keyword :

optical simulation inverted devices organic photovoltaics light absorption small molecule solar cells vertical phase separation

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GB/T 7714 Wang, Yuheng , Zhang, Yajie , Lu, Guanghao et al. Reconstructing Space- and Energy-Dependent Exciton Generation in Solution-Processed Inverted Organic Solar Cells [J]. | ACS APPLIED MATERIALS & INTERFACES , 2018 , 10 (16) : 13741-13747 .
MLA Wang, Yuheng et al. "Reconstructing Space- and Energy-Dependent Exciton Generation in Solution-Processed Inverted Organic Solar Cells" . | ACS APPLIED MATERIALS & INTERFACES 10 . 16 (2018) : 13741-13747 .
APA Wang, Yuheng , Zhang, Yajie , Lu, Guanghao , Feng, Xiaoshan , Xiao, Tong , Xie, Jing et al. Reconstructing Space- and Energy-Dependent Exciton Generation in Solution-Processed Inverted Organic Solar Cells . | ACS APPLIED MATERIALS & INTERFACES , 2018 , 10 (16) , 13741-13747 .
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Regulating the vertical phase distribution by fullerene-derivative in high performance ternary organic solar cells EI SCIE Scopus
期刊论文 | 2018 , 46 , 81-90 | NANO ENERGY
WoS CC Cited Count: 6 SCOPUS Cited Count: 6
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Abstract :

The vertical phase distribution of components in bulk heterojunction is diversified in organic solar cells (OSCs). The electron donors (acceptors) can be accumulated (depleted) at the interface of active layer and charge extraction layer. The variation of vertical phase distribution significantly influences device performance because of its impact on the charge transport and charge recombination. In order to achieve favorable vertical phase distribution in OSCs based on poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b']dithiophene))-co-(1,3-di(5-thiophene-2-yl)-5,7-bis(2-ethylhexyl) benzo[1,2-c:4,5-c']dithiophene-4,8-dione)] (PBDB-T):3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3'-d']-s-indaceno[1,2-b:5,6-b']-dithiophene (ITIC), phenyl-C71-butyric-acid-methyl ester (PC71BM) was incorporated into the binary system to fabricate ternary OSCs. In the ternary blend, PC71BM can effectively regulate the phase distribution of PBDB-T and ITIC in vertical direction, which provides favorable vertical phase distribution for charge transport. Moreover, the addition of PC71BM can also effectively increase the pi-pi stacking coherence length of both donor and acceptor, which facilitates charge transport and reduces the bimolecular recombination. The addition of an appropriate quantity of PC71BM can obviously improve both fill factor and short-circuit current density of the OSC based on PBDB-T:ITIC while open-circuit voltage reduces only about 0.01 V, which indicates a rational low energy loss. Consequently, the ternary OSC exhibits a best PCE of 11.0% compared to the 9.6% PCE of the binary counterpart.

Keyword :

Vertical phase distribution Charge transport Ternary organic solar cells Non-fullerene acceptor

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GB/T 7714 Bi, Pengqing , Xiao, Tong , Yang, Xiaoyu et al. Regulating the vertical phase distribution by fullerene-derivative in high performance ternary organic solar cells [J]. | NANO ENERGY , 2018 , 46 : 81-90 .
MLA Bi, Pengqing et al. "Regulating the vertical phase distribution by fullerene-derivative in high performance ternary organic solar cells" . | NANO ENERGY 46 (2018) : 81-90 .
APA Bi, Pengqing , Xiao, Tong , Yang, Xiaoyu , Niu, Mengsi , Wen, Zhenchuan , Zhang, Kangning et al. Regulating the vertical phase distribution by fullerene-derivative in high performance ternary organic solar cells . | NANO ENERGY , 2018 , 46 , 81-90 .
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Critical Role of Vertical Phase Separation in Small-Molecule Organic Solar Cells EI SCIE Scopus
期刊论文 | 2018 , 10 (15) , 12913-12920 | ACS APPLIED MATERIALS & INTERFACES
WoS CC Cited Count: 1 SCOPUS Cited Count: 1
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Abstract :

An inverted device structure is a more stable configuration than a regular device structure for solution-processed organic solar cells (OSCs). However, most of the solution-processed small-molecule OSCs (SM-OSCs) reported in the literature used the regular device structure, and a regular device normally exhibits a higher efficiency than an inverted device. Herein, a representative small-molecule DR3TBDTT was selected to figure out the reason for photovoltaic performance differences between regular and inverted devices. The mechanisms for a reduced open-circuit voltage (V-oc) and fill factor (FF) in the inverted device were studied. The reduced V-oc and FF is due to the vertical phase separation with excess [6,6]-phenyl-C-71-butyric acid methyl ester near the air/blend surface, which leads to a reduction in build-in voltage and unbalanced charge transport in the inverted device. Another reason for the reduced FF is the unfavorable DR3TBDTT crystallite orientation distribution along the film thickness, which is preferential edge-on crystallites in the top layer of the blend film and the increased population of face-on crystallites in the bottom layer of the blend film. This study illustrates that the morphology plays a key role in photovoltaic performance difference between regular and inverted devices and provides useful guidelines for further optimization of the morphology of solution-processed SM-OSCs.

Keyword :

charge transport crystallite orientation open-circuit voltage loss small-molecule organic solar cells vertical phase separation

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GB/T 7714 Fang, Jin , Deng, Dan , Wang, Zaiyu et al. Critical Role of Vertical Phase Separation in Small-Molecule Organic Solar Cells [J]. | ACS APPLIED MATERIALS & INTERFACES , 2018 , 10 (15) : 12913-12920 .
MLA Fang, Jin et al. "Critical Role of Vertical Phase Separation in Small-Molecule Organic Solar Cells" . | ACS APPLIED MATERIALS & INTERFACES 10 . 15 (2018) : 12913-12920 .
APA Fang, Jin , Deng, Dan , Wang, Zaiyu , Adil, Muhammad Abdullah , Xiao, Tong , Wang, Yuheng et al. Critical Role of Vertical Phase Separation in Small-Molecule Organic Solar Cells . | ACS APPLIED MATERIALS & INTERFACES , 2018 , 10 (15) , 12913-12920 .
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Effect of Isomerization on High-Performance Nonfullerene Electron Acceptors EI SCIE PubMed Scopus
期刊论文 | 2018 , 140 (29) , 9140-9147 | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
WoS CC Cited Count: 5
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Abstract :

We design and synthesize two isomeric fused-ring electron acceptors, FNIC1 and FNIC2, which have the same end-groups and side-chains, but isomeric fused-nine-ring cores. Subtle changes in the two isomers influence their electronic, optical, charge-transport, and morphological properties. As compared with FNIC1, FNIC2 film exhibits a red-shifted absorption peak at 794 nm (752 nm for FNIC1), larger electron affinity of 4.00 eV (3.92 eV for FNIC1), smaller ionization energy of 5.56 eV (5.61 eV for FNIC1), and higher electron mobility of 1.7 X 10(-3) cm(2) V-1 s(-1) (1.2 X 10(-3) cm(2) V-1 s(-1) for FNIC1). The as-cast organic solar cells based on PTB7-Th:FNIC2 blends exhibit a power conversion efficiency (PCE) of 13.0%, which is significantly higher than that of PTB7-Th:FNIC1-based devices (10.3%). Semitransparent devices based on PTB7-Th:FNIC2 blends exhibit PCEs varying from 9.51% to 11.6% at different average visible transmittance (AVT, 20.3- 13.6%), significantly higher than those of PTB7-Th:FNIC1-based devices (7.58-9.14% with AVT of 20.2-14.7%).

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GB/T 7714 Wang, Jiayu , Zhang, Junxiang , Xiao, Yiqun et al. Effect of Isomerization on High-Performance Nonfullerene Electron Acceptors [J]. | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY , 2018 , 140 (29) : 9140-9147 .
MLA Wang, Jiayu et al. "Effect of Isomerization on High-Performance Nonfullerene Electron Acceptors" . | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 140 . 29 (2018) : 9140-9147 .
APA Wang, Jiayu , Zhang, Junxiang , Xiao, Yiqun , Xiao, Tong , Zhu, Runyu , Yan, Cenqi et al. Effect of Isomerization on High-Performance Nonfullerene Electron Acceptors . | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY , 2018 , 140 (29) , 9140-9147 .
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Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors EI SCIE PubMed Scopus
期刊论文 | 2018 , 30 (2) | ADVANCED MATERIALS
WoS CC Cited Count: 4 SCOPUS Cited Count: 4
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Abstract :

Source-semiconductor-drain coplanar transistors with an organic semiconductor layer located within the same plane of source/drain electrodes are attractive for next-generation electronics, because they could be used to reduce material consumption, minimize parasitic leakage current, avoid crosstalk among different devices, and simplify the fabrication process of circuits. Here, a one-step, drop-casting-like printing method to realize a coplanar transistor using a model semiconductor/insulator [poly(3-hexylthiophene) (P3HT)/ polystyrene (PS)] blend is developed. By manipulating the solution dewetting dynamics on the metal electrode and SiO2 dielectric, the solution within the channel region is selectively confined, and thus make the top surface of source/drain electrodes completely free of polymers. Subsequently, during solvent evaporation, vertical phase separation between P3HT and PS leads to a semiconductor-insulator bilayer structure, contributing to an improved transistor performance. Moreover, this coplanar transistor with semiconductor- insulator bilayer structure is an ideal system for injecting charges into the insulator via gate-stress, and the thus-formed PS electret layer acts as a "nonuniform floating gate" to tune the threshold voltage and effective mobility of the transistors. Effective field-effect mobility higher than 1 cm(2) V-1 s(-1) with an on/off ratio > 10(7) is realized, and the performances are comparable to those of commercial amorphous silicon transistors. This coplanar transistor simplifies the fabrication process of corresponding circuits.

Keyword :

polymer blends organic electronics coplanar transistors printing vertical phase separation

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GB/T 7714 Bu, Laju , Hu, Mengxing , Lu, Wanlong et al. Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors [J]. | ADVANCED MATERIALS , 2018 , 30 (2) .
MLA Bu, Laju et al. "Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors" . | ADVANCED MATERIALS 30 . 2 (2018) .
APA Bu, Laju , Hu, Mengxing , Lu, Wanlong , Wang, Ziyu , Lu, Guanghao . Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors . | ADVANCED MATERIALS , 2018 , 30 (2) .
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Field-Effect Charge Transport in Doped Polymer Semiconductor-Insulator Alternating Bulk Junctions with Ultrathin Transport Layers. EI PubMed Scopus SCIE
期刊论文 | 2018 , 10 (45) , 39091-39099 | ACS applied materials & interfaces
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Conjugated-polymer field-effect transistors are attractive for flexible electronics. However, relatively high chemical doping (oxidation) concentration of p-type polymer semiconductors is usually not compatible with good transistor performance, due to poor switching-off capability and short-channel performance. Here, we propose a combined simulation and experimental investigation on charge transport in a semiconductor-insulator alternating bulk junction composed of repeating semiconductor and insulator regions, which shows better transistor performance at higher doping levels, as compared with traditional planar transistors. Moreover, the doped semiconductor transport layers in the junction should be less than 2 nm thick to ensure sufficient pinch-off capability. Using some semiconductors including poly(3-hexylthiophene), we utilize a fast solvent evaporation approach to obtain semiconductor-insulator alternating bulk junctions with ultrathin (thickness < 2 nm) semiconductor crystallites and with vertical gradients of both morphology and electronic properties. Doping with a concentration of up to 10<sup>19</sup> cm<sup>-3</sup> simultaneously induces the improvement of field-effect mobility, on/off ratio, and subthreshold swing, which leads to long-term (>1 year) stability, without lowering the short-channel performance. Moreover, these heterojunctions are optically transparent, nearly colorless, and flexible, thus could be exploited for wide electronic and photonic applications.

Keyword :

conjugated-polymers charge transport ultrathin layers field-effect transistors doping

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GB/T 7714 Hu Yupeng , Bu Laju , Wang Xudong et al. Field-Effect Charge Transport in Doped Polymer Semiconductor-Insulator Alternating Bulk Junctions with Ultrathin Transport Layers. [J]. | ACS applied materials & interfaces , 2018 , 10 (45) : 39091-39099 .
MLA Hu Yupeng et al. "Field-Effect Charge Transport in Doped Polymer Semiconductor-Insulator Alternating Bulk Junctions with Ultrathin Transport Layers." . | ACS applied materials & interfaces 10 . 45 (2018) : 39091-39099 .
APA Hu Yupeng , Bu Laju , Wang Xudong , Zhou Ling , Lu Guanghao . Field-Effect Charge Transport in Doped Polymer Semiconductor-Insulator Alternating Bulk Junctions with Ultrathin Transport Layers. . | ACS applied materials & interfaces , 2018 , 10 (45) , 39091-39099 .
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Manipulating Doping of Organic Semiconductors by Reactive Oxygen for Field-Effect Transistors EI SCIE Scopus
期刊论文 | 2018 , 12 (10) | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
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Thin film organic field-effect transistors (OFETs) are usually featured with charge traps, limiting charge transport and leading to low mobility especially at low gate voltages. In this work, doping process of a model organic semiconductor 2,7-didodecyl[1]benzothieno[3,2-b][1]benzothiophene (C12-BTBT) has been manipulated, using low-cost reactive oxygen namely oxygen plasma or ozone. It is found that low-pressure (20Pa) oxygen plasma can induce a low-moderate doping concentration, which is, however, sufficient to warrant field-effect mobilities over 5cm(2)V(-1)s(-1) in a large gate voltage range and sharp subthreshold swings, without degradation of on/off ratio. Low-pressure oxygen plasma can also positively shift the threshold voltage of the device, thus largely reducing the working voltages. Oxygen plasma with higher pressure than 100Pa induces higher doping concentration, more significantly shifting the threshold voltage and deteriorating on/off ratio due to substantial bulk electrical conductivity, which is similar to the treatment by UV-ozone at atmospheric pressure. As compared with the well-studied organic dopant F4-TCNQ, the doping process of reactive oxygen can be more easily in situ manipulated to reach an appropriate range of doping concentration, warranting higher performance and larger tunability for OFETs.

Keyword :

organic semiconductors doping charge transport oxygen plasma organic field-effect transistors

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GB/T 7714 Qiu, Yuming , Wei, Peng , Wang, Zihao et al. Manipulating Doping of Organic Semiconductors by Reactive Oxygen for Field-Effect Transistors [J]. | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS , 2018 , 12 (10) .
MLA Qiu, Yuming et al. "Manipulating Doping of Organic Semiconductors by Reactive Oxygen for Field-Effect Transistors" . | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 12 . 10 (2018) .
APA Qiu, Yuming , Wei, Peng , Wang, Zihao , Lu, Wanlong , Jiang, Yihang , Zhang, Chaofan et al. Manipulating Doping of Organic Semiconductors by Reactive Oxygen for Field-Effect Transistors . | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS , 2018 , 12 (10) .
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Organic-semiconductor: Polymer-electret blends for high-performance transistors EI Scopus SCIE
期刊论文 | 2018 , 11 (11) , 5835-5848 | Nano Research
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As compared with polymer semiconductors, solution-processed small-molecule semiconductors usually have poorer film-formation properties, which induces wide variations in device performance in terms of mobility and threshold voltage, thus severely limiting their commercial applications. In this work, we propose an easily accessible method to improve the performance and reduce the variability of small-molecule organic field-effect transistors (OFETs) by blending organic semiconductors with an insulator polymer, which is subsequently post-treated by gate stress to generate an electret. By blending the organic semiconductor 2,7-didodecyl[1]benzothieno[3,2-b][1]benzothiophene (C12-BTBT) with the insulator polystyrene, uniform transport layers with vertically phase segregated morphology are obtained, from which the mobility and threshold voltage of OFETs are largely manipulated. The OFETs exhibit field-effect mobilities as high as 7.5 cm2·V−1·s−1with an on/off ratio exceeding 106in ambient conditions. This double-layer structure provides an appropriate architecture for applying gate-stress to inject charges into the insulating layer, forming an electret. The generation of the electret is thermally accelerated and thus can be easily realized under moderate gate-stress at elevated temperature (e.g., 60 °C). After cooling, the electret layer serves as a floating-gate, which not only continuously tunes the threshold voltage and field-effect mobility, but also helps minimize the contact resistances and optimize the subthreshold swing. As an application of this method, a digital inverter is built and its performance is optimized via in situ tuning of its individual transistors. [Figure not available: see fulltext.] © 2018 Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature

Keyword :

Blending organic semiconductors C12-BTBT Commercial applications Double layer structure Field-effect mobilities Gate stress Organic electronics Vertical phase separations

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GB/T 7714 Wei, Peng , Li, Shengtao , Li, Dongfan et al. Organic-semiconductor: Polymer-electret blends for high-performance transistors [J]. | Nano Research , 2018 , 11 (11) : 5835-5848 .
MLA Wei, Peng et al. "Organic-semiconductor: Polymer-electret blends for high-performance transistors" . | Nano Research 11 . 11 (2018) : 5835-5848 .
APA Wei, Peng , Li, Shengtao , Li, Dongfan , Yu, Han , Wang, Xudong , Xu, Congcong et al. Organic-semiconductor: Polymer-electret blends for high-performance transistors . | Nano Research , 2018 , 11 (11) , 5835-5848 .
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