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学者姓名：云峰
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Abstract ：
The selective area growth (SAG) technique enables the creation of multi-color micro-structures. However, the substrate pattern to obtain multi-color and mass transfer of these micro-structures are complicated to achieve. Moreover, high dislocation density as well as large residual stress in c-plane quantum wells still remain challenges. Here, an improved SAG strategy was proposed to achieve completely merged asymmetric pyramids on closely connected deep-concave holes via the lateral overgrowth of adjacent pyramids. These asymmetric pyramids were directly grown on the sapphire substrate, making mass transfer be possible. Growth rate distinction appears at the different positions of the overgrowth region, resulting in a multi-wavelength emission. More importantly, the residual stress and the dislocation density can be suppressed by utilizing the deep-hole pattern and lateral overgrowth, contributing to a lower piezoelectric polarization field and a higher spontaneous emission rate. These ultrafast and high-efficient multi-color micro-LEDs are suitable for the application in highresolution display, flexible devices, and high-speed visible-light-communication.
Keyword ：
Deep-hole pattern Lateral overgrowth Microstructures Stress and defect
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| GB/T 7714 | Tian, Zhenhuan , Zhang, Weihan , Wang, Xuzheng et al. Completely merged multi-color asymmetric pyramid with suppressed stress and defect density [J]. | JOURNAL OF CRYSTAL GROWTH , 2021 , 570 . |
| MLA | Tian, Zhenhuan et al. "Completely merged multi-color asymmetric pyramid with suppressed stress and defect density" . | JOURNAL OF CRYSTAL GROWTH 570 (2021) . |
| APA | Tian, Zhenhuan , Zhang, Weihan , Wang, Xuzheng , Li, Qiang , Su, Xilin , Li, Yufeng et al. Completely merged multi-color asymmetric pyramid with suppressed stress and defect density . | JOURNAL OF CRYSTAL GROWTH , 2021 , 570 . |
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Abstract ：
We demonstrated a method to obtain super flexible LEDs, based on high quality pyramid arrays grown directly on sapphire substrates. Laser lift-off (LLO) and dual transfer processes were applied to transfer pyramid arrays face up onto the flexible substrates, which is more efficient than back light emission. Ag grid and Ag nanowires were employed as the electrical connection. No significant performance reduction appeared until the device reached a curvature radius of 0.5 mm. The performance reduction results from cracks appearing at the junction of the Ag grid, which can be improved by replacing the Ag grid with a strip electrode. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
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| GB/T 7714 | Tian, Zhenhuan , Li, Yufeng , Su, Xilin et al. Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer [J]. | OPTICS EXPRESS , 2018 , 26 (2) : 1817-1824 . |
| MLA | Tian, Zhenhuan et al. "Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer" . | OPTICS EXPRESS 26 . 2 (2018) : 1817-1824 . |
| APA | Tian, Zhenhuan , Li, Yufeng , Su, Xilin , Feng, Lungang , Wang, Shuai , Ding, Wen et al. Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer . | OPTICS EXPRESS , 2018 , 26 (2) , 1817-1824 . |
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Abstract ：
Copyright © 2018 American Chemical Society. Microcavities with whispering gallery modes (WGM), usually formed by two-dimensional (2D) circular structures, are significant elements in integrated optics, quantum information, and topological photonics. We report three-dimensional (3D) WGM from self-bent-up microdisks consisting of strain-released AlGaN/GaN bilayers, which provide an extra degree of freedom of the WGM photons in the vertical dimension, in contrast with the 2D WGM whose field mainly distributes in the horizontal plane. Despite the ultrathin and deformed cavity layer, the 3D WGM shows a reasonably high quality factor for GaN-based microdisks (∼1300) and exhibits single mode lasing due to the anisotropic feature of the bent-up disk, a unique advantage over the conventional planar microdisks of the same material and size. Such devices provide altitude dependence of emitting direction and are promising for applications in multilevel integrated photonics circuits.
Keyword ：
microdisk self-bent-up device single mode lasing whispering gallery mode wide bandgap microcavity
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| GB/T 7714 | Li, Yufeng , Feng, Lungang , Li, Feng et al. Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk [J]. | ACS Photonics , 2018 , 5 (11) : 4259-4264 . |
| MLA | Li, Yufeng et al. "Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk" . | ACS Photonics 5 . 11 (2018) : 4259-4264 . |
| APA | Li, Yufeng , Feng, Lungang , Li, Feng , Hu, Peng , Du, Mengqi , Su, Xilin et al. Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk . | ACS Photonics , 2018 , 5 (11) , 4259-4264 . |
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Abstract ：
The fabrication and application of polystyrene (PS)-assisted ITO nanowire (NW) networks are reported. The ITO-NW networks are fabricated by means of electron-beam deposition via PS. This method has the advantages of low-temperature (similar to 300 degrees C), low-cost, facile and efficient operation. The growth mechanism of PS-assisted ITO NWs was analyzed in detail, and the morphology of which could be regulated by the size of PS. X-ray diffraction and high-resolution transmission electron microscope show that the ITO NWs are close to an integral cubic lattice. The transmittance of ITO-NW networks layer is above 90% after 400 nm and the sheet resistance is similar to 200 Omega/square When they applied on vertical blue and green LEDs, the light output power all has been improved similar to 30%. And, the resistive switching behaviors of ITO-NWs were measured and analyzed in Ag/ITO-NW networks/Al capacitor. The application of ITO-NW networks on special morphological devices was discussed. The PS-assisted ITO-NW networks show a strong researching and application value.
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| GB/T 7714 | Li, Qiang , Yun, Feng , Li, Yufeng et al. Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth [J]. | SCIENTIFIC REPORTS , 2017 , 7 . |
| MLA | Li, Qiang et al. "Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth" . | SCIENTIFIC REPORTS 7 (2017) . |
| APA | Li, Qiang , Yun, Feng , Li, Yufeng , Ding, Wen , Zhang, Ye . Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth . | SCIENTIFIC REPORTS , 2017 , 7 . |
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Abstract ：
In this work, we have successfully fabricated microtubes by strain-induced self-rolling of a InGaN/GaN quantum wells nanomembrane. Freestanding quantum wells microtubes, with a diameter of 6 mu m and wall thickness of 50 nm, are formed when the coherently strained InGaN/GaN quantum wells heterostructure is selectively released from the hosting substrate. Periodic oscillations due to whispering-gallery modes resonance were found superimposed on photoluminescence spectra even at low optical excitation power. With increasing pumping power density, the microtube is characterized by a stimulated emission with a threshold as low as 415 kW/cm(2). Such emission shows predominant TM polarization parallel to the microtube axis. (C) 2017 Optical Society of America
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| GB/T 7714 | Li, Yufeng , Feng, Lungang , Su, Xilin et al. Whispering gallery mode lasing from InGaN/GaN quantum well microtube [J]. | OPTICS EXPRESS , 2017 , 25 (15) : 18072-18080 . |
| MLA | Li, Yufeng et al. "Whispering gallery mode lasing from InGaN/GaN quantum well microtube" . | OPTICS EXPRESS 25 . 15 (2017) : 18072-18080 . |
| APA | Li, Yufeng , Feng, Lungang , Su, Xilin , Li, Qiang , Yun, Feng , Yuan, Ge et al. Whispering gallery mode lasing from InGaN/GaN quantum well microtube . | OPTICS EXPRESS , 2017 , 25 (15) , 18072-18080 . |
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Abstract ：
In this paper, the improvement of the method measuring the junction temperature of light-emitting diodes (LEDs) has been studied experimentally. A practical method is proposed with only three measurement procedures. With the consideration of indium (In) composition and blue shift, the method has a high applicability, which is practical for the LED chips vary from blue to green chips under different currents, including the packaged chips. On the other hand, according to the experimental and derived results, the junction-temperature difference and peak-wavelength shift in both blue-shift and red-shift fields show similar parabolic-like relations. To simplify the experimental processes, dual-wavelength LEDs were fabricated and measured instead of conventional single-wavelength LEDs.
Keyword ：
dual-wavelength light emitting diodes Junction temperature peak-wavelength method practicability
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| GB/T 7714 | Zhao, Yukun , Yun, Feng , Feng, Lungang et al. Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs [J]. | IEEE ACCESS , 2017 , 5 : 11712-11716 . |
| MLA | Zhao, Yukun et al. "Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs" . | IEEE ACCESS 5 (2017) : 11712-11716 . |
| APA | Zhao, Yukun , Yun, Feng , Feng, Lungang , Wang, Shuai , Li, Yufeng , Su, Xilin et al. Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs . | IEEE ACCESS , 2017 , 5 , 11712-11716 . |
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Abstract ：
In this paper, modulating the thickness of quantum barriers (QBs) in gallium nitride (GaN) based light-emitting diodes (LEDs) has been investigated numerically and experimentally. To reveal the underlying mechanism of efficiency droop for LEDs with different QB thicknesses, the dual-wavelength active regions were specially designed. Compare to LEDs with 18-nm-thick QBs and 9-nm-thick QBs, the efficiency droop ratio of the LED with 12-nm-thick QBs is the lowest at the high current density of 80A/cm(2), which indicates that LEDs with medium QB thickness are the best for suppressing efficiency droop. The measured external quantum efficiency (EQE) of the LED with 18-nm-thick QBs is the highest at the low current density of 5A/cm(2), which may result from the lowest leakage current. However, due to the higher hole injection level, the measured EQE results of the LED with 12-nm-thick QBs are higher than the LED with 18-nm-thick QBs at 80A/cm(2). (C) 2017 The Japan Society of Applied Physics
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| GB/T 7714 | Zhao, Yukun , Yun, Feng , Wang, Shuai et al. Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes [J]. | JAPANESE JOURNAL OF APPLIED PHYSICS , 2017 , 56 (6) . |
| MLA | Zhao, Yukun et al. "Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes" . | JAPANESE JOURNAL OF APPLIED PHYSICS 56 . 6 (2017) . |
| APA | Zhao, Yukun , Yun, Feng , Wang, Shuai , Feng, Lungang , Su, Xilin , Li, Yufeng et al. Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes . | JAPANESE JOURNAL OF APPLIED PHYSICS , 2017 , 56 (6) . |
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Abstract ：
Polystyrene spheres were found to be an effective assisted material in the growth of indium-tin-oxide (ITO) nanowire networks, bearing low temperature, high purity, and good control of size. The temperature and time of growth were studied to achieve ITO nanowire networks with high transmission and low resistivity. When prepared by PS spheres of 670 nm dia. for 15 min at 300 degrees C, the transmittance is above 90% after the wave length of 400 nm, and the sheet resistance is approximate to 200 /. Polystyrene-assisted ITO nanowires showed the high degree of crystallinity with lattice fringes, and well coincided cubic phase of In2O3. The density of ITO nanowire networks were controlled by polystyrene spheres and the residual polystyrene was removed by thermal annealing. ITO nanowire networks open new opportunities for optoelectronic devices needing special morphology for the improvement of light extraction efficiency, and as a new type of conductive film, which have an even broad application arena.
Keyword ：
catalyst indium-tin-oxide nanowires light-emitting diode polystyrene spheres
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| GB/T 7714 | Li, Qiang , Feng, Lungang , Wang, Shuai et al. Controlled synthesis of polystyrene-assisted tin-doped indium oxide nanowire networks [J]. | JOURNAL OF MATERIALS RESEARCH , 2017 , 32 (9) : 1647-1655 . |
| MLA | Li, Qiang et al. "Controlled synthesis of polystyrene-assisted tin-doped indium oxide nanowire networks" . | JOURNAL OF MATERIALS RESEARCH 32 . 9 (2017) : 1647-1655 . |
| APA | Li, Qiang , Feng, Lungang , Wang, Shuai , Li, Yu-Feng , Yun, Feng . Controlled synthesis of polystyrene-assisted tin-doped indium oxide nanowire networks . | JOURNAL OF MATERIALS RESEARCH , 2017 , 32 (9) , 1647-1655 . |
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Abstract ：
We tried to obtain microstructures on a three-dimensional (3D) micropatterned substrate by laser drilling. The influences of the dimensions of the drilling holes on the morphology and the material quality of the grown structures were studied. Uniform micropyramid arrays with relatively low dislocation density can be achieved by adjusting the laser drilling parameters. The internal quantum efficiency was estimated to be improved by a factor of 3 for a pyramid structure compared with that of planar LEDs. We fabricated 5 x 7 mm(2) flexible LEDs employing the pyramid structure and the devices exhibited good flexibility without performance reduction after bending. (C) 2017 The Japan Society of Applied Physics
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| GB/T 7714 | Tian, Zhenhuan , Li, Yufeng , Su, Xilin et al. Growth, characterization, and application of well-defined separated GaN-based pyramid array on micropatterned sapphire substrate [J]. | APPLIED PHYSICS EXPRESS , 2017 , 10 (9) . |
| MLA | Tian, Zhenhuan et al. "Growth, characterization, and application of well-defined separated GaN-based pyramid array on micropatterned sapphire substrate" . | APPLIED PHYSICS EXPRESS 10 . 9 (2017) . |
| APA | Tian, Zhenhuan , Li, Yufeng , Su, Xilin , Feng, Lungang , Wang, Shuai , Zhang, Minyan et al. Growth, characterization, and application of well-defined separated GaN-based pyramid array on micropatterned sapphire substrate . | APPLIED PHYSICS EXPRESS , 2017 , 10 (9) . |
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Abstract ：
In this paper, a novel array of quasi-three-dimensional (quasi-3D) bowtie nanoantennas has been investigated numerically and experimentally. A low-cost and facile method has been designed and implemented to fabricate the quasi-3D bowtie nanoantennas. The fabrication processes containing laser patterning and wet etching have demonstrated the advantages of easily tuning the periodic and diameter of microhole arrays. According to the simulated results, the electric and magnetic resonances at visible wavelengths are obtained in the tips and contours of the metamaterials made of the quasi-3D bowtie nanoantennas, respectively. The effects of the size and gap of quasi-3D bowtie nanoantennas on the array performance have also been studied. The underlying mechanism suggests that different electric and magnetic resonant ranges of the metamaterials could contribute to the broad resonant range for the monolithic metamaterials.
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| GB/T 7714 | Zhao, Yukun , Yun, Feng , Huang, Yi et al. Metamaterial study of quasi-three-dimensional bowtie nanoantennas at visible wavelengths [J]. | SCIENTIFIC REPORTS , 2017 , 7 . |
| MLA | Zhao, Yukun et al. "Metamaterial study of quasi-three-dimensional bowtie nanoantennas at visible wavelengths" . | SCIENTIFIC REPORTS 7 (2017) . |
| APA | Zhao, Yukun , Yun, Feng , Huang, Yi , Wang, Shuai , Feng, Lungang , Li, Yufeng et al. Metamaterial study of quasi-three-dimensional bowtie nanoantennas at visible wavelengths . | SCIENTIFIC REPORTS , 2017 , 7 . |
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