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Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer EI SCIE Scopus
期刊论文 | 2018 , 26 (2) , 1817-1824 | OPTICS EXPRESS
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Abstract :

We demonstrated a method to obtain super flexible LEDs, based on high quality pyramid arrays grown directly on sapphire substrates. Laser lift-off (LLO) and dual transfer processes were applied to transfer pyramid arrays face up onto the flexible substrates, which is more efficient than back light emission. Ag grid and Ag nanowires were employed as the electrical connection. No significant performance reduction appeared until the device reached a curvature radius of 0.5 mm. The performance reduction results from cracks appearing at the junction of the Ag grid, which can be improved by replacing the Ag grid with a strip electrode. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.

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GB/T 7714 Tian, Zhenhuan , Li, Yufeng , Su, Xilin et al. Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer [J]. | OPTICS EXPRESS , 2018 , 26 (2) : 1817-1824 .
MLA Tian, Zhenhuan et al. "Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer" . | OPTICS EXPRESS 26 . 2 (2018) : 1817-1824 .
APA Tian, Zhenhuan , Li, Yufeng , Su, Xilin , Feng, Lungang , Wang, Shuai , Ding, Wen et al. Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer . | OPTICS EXPRESS , 2018 , 26 (2) , 1817-1824 .
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Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk Scopus
期刊论文 | 2018 | ACS Photonics
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Abstract :

Copyright © 2018 American Chemical Society. Microcavities with whispering gallery modes (WGM), usually formed by two-dimensional (2D) circular structures, are significant elements in integrated optics, quantum information, and topological photonics. We report three-dimensional (3D) WGM from self-bent-up microdisks consisting of strain-released AlGaN/GaN bilayers, which provide an extra degree of freedom of the WGM photons in the vertical dimension, in contrast with the 2D WGM whose field mainly distributes in the horizontal plane. Despite the ultrathin and deformed cavity layer, the 3D WGM shows a reasonably high quality factor for GaN-based microdisks (∼1300) and exhibits single mode lasing due to the anisotropic feature of the bent-up disk, a unique advantage over the conventional planar microdisks of the same material and size. Such devices provide altitude dependence of emitting direction and are promising for applications in multilevel integrated photonics circuits.

Keyword :

microdisk self-bent-up device single mode lasing whispering gallery mode wide bandgap microcavity

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GB/T 7714 Li, Yufeng , Feng, Lungang , Li, Feng et al. Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk [J]. | ACS Photonics , 2018 .
MLA Li, Yufeng et al. "Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk" . | ACS Photonics (2018) .
APA Li, Yufeng , Feng, Lungang , Li, Feng , Hu, Peng , Du, Mengqi , Su, Xilin et al. Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk . | ACS Photonics , 2018 .
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Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth SCIE PubMed Scopus
期刊论文 | 2017 , 7 | SCIENTIFIC REPORTS | IF: 4.122
WoS CC Cited Count: 2
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Abstract :

The fabrication and application of polystyrene (PS)-assisted ITO nanowire (NW) networks are reported. The ITO-NW networks are fabricated by means of electron-beam deposition via PS. This method has the advantages of low-temperature (similar to 300 degrees C), low-cost, facile and efficient operation. The growth mechanism of PS-assisted ITO NWs was analyzed in detail, and the morphology of which could be regulated by the size of PS. X-ray diffraction and high-resolution transmission electron microscope show that the ITO NWs are close to an integral cubic lattice. The transmittance of ITO-NW networks layer is above 90% after 400 nm and the sheet resistance is similar to 200 Omega/square When they applied on vertical blue and green LEDs, the light output power all has been improved similar to 30%. And, the resistive switching behaviors of ITO-NWs were measured and analyzed in Ag/ITO-NW networks/Al capacitor. The application of ITO-NW networks on special morphological devices was discussed. The PS-assisted ITO-NW networks show a strong researching and application value.

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GB/T 7714 Li, Qiang , Yun, Feng , Li, Yufeng et al. Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth [J]. | SCIENTIFIC REPORTS , 2017 , 7 .
MLA Li, Qiang et al. "Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth" . | SCIENTIFIC REPORTS 7 (2017) .
APA Li, Qiang , Yun, Feng , Li, Yufeng , Ding, Wen , Zhang, Ye . Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth . | SCIENTIFIC REPORTS , 2017 , 7 .
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Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes EI SCIE Scopus
期刊论文 | 2017 , 56 (6) | JAPANESE JOURNAL OF APPLIED PHYSICS | IF: 1.452
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Abstract :

In this paper, modulating the thickness of quantum barriers (QBs) in gallium nitride (GaN) based light-emitting diodes (LEDs) has been investigated numerically and experimentally. To reveal the underlying mechanism of efficiency droop for LEDs with different QB thicknesses, the dual-wavelength active regions were specially designed. Compare to LEDs with 18-nm-thick QBs and 9-nm-thick QBs, the efficiency droop ratio of the LED with 12-nm-thick QBs is the lowest at the high current density of 80A/cm(2), which indicates that LEDs with medium QB thickness are the best for suppressing efficiency droop. The measured external quantum efficiency (EQE) of the LED with 18-nm-thick QBs is the highest at the low current density of 5A/cm(2), which may result from the lowest leakage current. However, due to the higher hole injection level, the measured EQE results of the LED with 12-nm-thick QBs are higher than the LED with 18-nm-thick QBs at 80A/cm(2). (C) 2017 The Japan Society of Applied Physics

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GB/T 7714 Zhao, Yukun , Yun, Feng , Wang, Shuai et al. Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes [J]. | JAPANESE JOURNAL OF APPLIED PHYSICS , 2017 , 56 (6) .
MLA Zhao, Yukun et al. "Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes" . | JAPANESE JOURNAL OF APPLIED PHYSICS 56 . 6 (2017) .
APA Zhao, Yukun , Yun, Feng , Wang, Shuai , Feng, Lungang , Su, Xilin , Li, Yufeng et al. Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes . | JAPANESE JOURNAL OF APPLIED PHYSICS , 2017 , 56 (6) .
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Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs EI SCIE Scopus
期刊论文 | 2017 , 5 , 11712-11716 | IEEE ACCESS | IF: 3.557
WoS CC Cited Count: 1
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Abstract :

In this paper, the improvement of the method measuring the junction temperature of light-emitting diodes (LEDs) has been studied experimentally. A practical method is proposed with only three measurement procedures. With the consideration of indium (In) composition and blue shift, the method has a high applicability, which is practical for the LED chips vary from blue to green chips under different currents, including the packaged chips. On the other hand, according to the experimental and derived results, the junction-temperature difference and peak-wavelength shift in both blue-shift and red-shift fields show similar parabolic-like relations. To simplify the experimental processes, dual-wavelength LEDs were fabricated and measured instead of conventional single-wavelength LEDs.

Keyword :

dual-wavelength light emitting diodes practicability peak-wavelength method Junction temperature

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GB/T 7714 Zhao, Yukun , Yun, Feng , Feng, Lungang et al. Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs [J]. | IEEE ACCESS , 2017 , 5 : 11712-11716 .
MLA Zhao, Yukun et al. "Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs" . | IEEE ACCESS 5 (2017) : 11712-11716 .
APA Zhao, Yukun , Yun, Feng , Feng, Lungang , Wang, Shuai , Li, Yufeng , Su, Xilin et al. Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs . | IEEE ACCESS , 2017 , 5 , 11712-11716 .
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Metamaterial study of quasi-three-dimensional bowtie nanoantennas at visible wavelengths SCIE PubMed Scopus
期刊论文 | 2017 , 7 | SCIENTIFIC REPORTS | IF: 4.122
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Abstract :

In this paper, a novel array of quasi-three-dimensional (quasi-3D) bowtie nanoantennas has been investigated numerically and experimentally. A low-cost and facile method has been designed and implemented to fabricate the quasi-3D bowtie nanoantennas. The fabrication processes containing laser patterning and wet etching have demonstrated the advantages of easily tuning the periodic and diameter of microhole arrays. According to the simulated results, the electric and magnetic resonances at visible wavelengths are obtained in the tips and contours of the metamaterials made of the quasi-3D bowtie nanoantennas, respectively. The effects of the size and gap of quasi-3D bowtie nanoantennas on the array performance have also been studied. The underlying mechanism suggests that different electric and magnetic resonant ranges of the metamaterials could contribute to the broad resonant range for the monolithic metamaterials.

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GB/T 7714 Zhao, Yukun , Yun, Feng , Huang, Yi et al. Metamaterial study of quasi-three-dimensional bowtie nanoantennas at visible wavelengths [J]. | SCIENTIFIC REPORTS , 2017 , 7 .
MLA Zhao, Yukun et al. "Metamaterial study of quasi-three-dimensional bowtie nanoantennas at visible wavelengths" . | SCIENTIFIC REPORTS 7 (2017) .
APA Zhao, Yukun , Yun, Feng , Huang, Yi , Wang, Shuai , Feng, Lungang , Li, Yufeng et al. Metamaterial study of quasi-three-dimensional bowtie nanoantennas at visible wavelengths . | SCIENTIFIC REPORTS , 2017 , 7 .
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Growth, characterization, and application of well-defined separated GaN-based pyramid array on micropatterned sapphire substrate EI SCIE Scopus
期刊论文 | 2017 , 10 (9) | APPLIED PHYSICS EXPRESS | IF: 2.555
WoS CC Cited Count: 2
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Abstract :

We tried to obtain microstructures on a three-dimensional (3D) micropatterned substrate by laser drilling. The influences of the dimensions of the drilling holes on the morphology and the material quality of the grown structures were studied. Uniform micropyramid arrays with relatively low dislocation density can be achieved by adjusting the laser drilling parameters. The internal quantum efficiency was estimated to be improved by a factor of 3 for a pyramid structure compared with that of planar LEDs. We fabricated 5 x 7 mm(2) flexible LEDs employing the pyramid structure and the devices exhibited good flexibility without performance reduction after bending. (C) 2017 The Japan Society of Applied Physics

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GB/T 7714 Tian, Zhenhuan , Li, Yufeng , Su, Xilin et al. Growth, characterization, and application of well-defined separated GaN-based pyramid array on micropatterned sapphire substrate [J]. | APPLIED PHYSICS EXPRESS , 2017 , 10 (9) .
MLA Tian, Zhenhuan et al. "Growth, characterization, and application of well-defined separated GaN-based pyramid array on micropatterned sapphire substrate" . | APPLIED PHYSICS EXPRESS 10 . 9 (2017) .
APA Tian, Zhenhuan , Li, Yufeng , Su, Xilin , Feng, Lungang , Wang, Shuai , Zhang, Minyan et al. Growth, characterization, and application of well-defined separated GaN-based pyramid array on micropatterned sapphire substrate . | APPLIED PHYSICS EXPRESS , 2017 , 10 (9) .
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Controlled synthesis of polystyrene-assisted tin-doped indium oxide nanowire networks EI SCIE Scopus
期刊论文 | 2017 , 32 (9) , 1647-1655 | JOURNAL OF MATERIALS RESEARCH | IF: 1.495
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Abstract :

Polystyrene spheres were found to be an effective assisted material in the growth of indium-tin-oxide (ITO) nanowire networks, bearing low temperature, high purity, and good control of size. The temperature and time of growth were studied to achieve ITO nanowire networks with high transmission and low resistivity. When prepared by PS spheres of 670 nm dia. for 15 min at 300 degrees C, the transmittance is above 90% after the wave length of 400 nm, and the sheet resistance is approximate to 200 /. Polystyrene-assisted ITO nanowires showed the high degree of crystallinity with lattice fringes, and well coincided cubic phase of In2O3. The density of ITO nanowire networks were controlled by polystyrene spheres and the residual polystyrene was removed by thermal annealing. ITO nanowire networks open new opportunities for optoelectronic devices needing special morphology for the improvement of light extraction efficiency, and as a new type of conductive film, which have an even broad application arena.

Keyword :

polystyrene spheres light-emitting diode catalyst indium-tin-oxide nanowires

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GB/T 7714 Li, Qiang , Feng, Lungang , Wang, Shuai et al. Controlled synthesis of polystyrene-assisted tin-doped indium oxide nanowire networks [J]. | JOURNAL OF MATERIALS RESEARCH , 2017 , 32 (9) : 1647-1655 .
MLA Li, Qiang et al. "Controlled synthesis of polystyrene-assisted tin-doped indium oxide nanowire networks" . | JOURNAL OF MATERIALS RESEARCH 32 . 9 (2017) : 1647-1655 .
APA Li, Qiang , Feng, Lungang , Wang, Shuai , Li, Yu-Feng , Yun, Feng . Controlled synthesis of polystyrene-assisted tin-doped indium oxide nanowire networks . | JOURNAL OF MATERIALS RESEARCH , 2017 , 32 (9) , 1647-1655 .
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Whispering gallery mode lasing from InGaN/GaN quantum well microtube EI SCIE Scopus
期刊论文 | 2017 , 25 (15) , 18072-18080 | OPTICS EXPRESS | IF: 3.356
WoS CC Cited Count: 4
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Abstract :

In this work, we have successfully fabricated microtubes by strain-induced self-rolling of a InGaN/GaN quantum wells nanomembrane. Freestanding quantum wells microtubes, with a diameter of 6 mu m and wall thickness of 50 nm, are formed when the coherently strained InGaN/GaN quantum wells heterostructure is selectively released from the hosting substrate. Periodic oscillations due to whispering-gallery modes resonance were found superimposed on photoluminescence spectra even at low optical excitation power. With increasing pumping power density, the microtube is characterized by a stimulated emission with a threshold as low as 415 kW/cm(2). Such emission shows predominant TM polarization parallel to the microtube axis. (C) 2017 Optical Society of America

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GB/T 7714 Li, Yufeng , Feng, Lungang , Su, Xilin et al. Whispering gallery mode lasing from InGaN/GaN quantum well microtube [J]. | OPTICS EXPRESS , 2017 , 25 (15) : 18072-18080 .
MLA Li, Yufeng et al. "Whispering gallery mode lasing from InGaN/GaN quantum well microtube" . | OPTICS EXPRESS 25 . 15 (2017) : 18072-18080 .
APA Li, Yufeng , Feng, Lungang , Su, Xilin , Li, Qiang , Yun, Feng , Yuan, Ge et al. Whispering gallery mode lasing from InGaN/GaN quantum well microtube . | OPTICS EXPRESS , 2017 , 25 (15) , 18072-18080 .
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Time-resolved photoluminescence studies of InGaN/GaN multi-quantum-wells blue and green light-emitting diodes at room temperature EI SCIE Scopus
期刊论文 | 2016 , 127 (4) , 1809-1813 | OPTIK | IF: 0.835
WoS CC Cited Count: 1
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Abstract :

Time-resolved photoluminescence (TRPL) of the blue and green LEDs, which has the same number of quantum-well (QW) pairs and the different etched depths, has been studied at room temperature. The purpose is to analyze the effect of different indium (In) content and defects density on TRPL. The carrier lifetime of radiative recombination and non-radiative for blue LED (In = 0.15) is 625.0 ns and 55.6 ns, and for green ones (In = 0.21), the figure is 363.6 ns and 35.0 ns. The carrier lifetime is reduced along with the increasing of In-component. As the etched depth deepened of blue LED, the non-radiative recombination lifetime tends to infinity. When it comes to low indium content, the PL spectra present a blue shift. With the increasing of indium mole fraction, the blue shift appeared at first, and then a red shift has been observed. And the spectral shift has disappeared, while etching the LEDs. At last, we clarify the results, through the band bending caused by polarization electric field. (C) 2015 Elsevier GmbH. All rights reserved.

Keyword :

Time-resolved photoluminescence (TRPL) Polarization electric field Light-emitting diodes (LED)

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GB/T 7714 Li, Qiang , Wang, Shuai , Gong, Zhi-Na et al. Time-resolved photoluminescence studies of InGaN/GaN multi-quantum-wells blue and green light-emitting diodes at room temperature [J]. | OPTIK , 2016 , 127 (4) : 1809-1813 .
MLA Li, Qiang et al. "Time-resolved photoluminescence studies of InGaN/GaN multi-quantum-wells blue and green light-emitting diodes at room temperature" . | OPTIK 127 . 4 (2016) : 1809-1813 .
APA Li, Qiang , Wang, Shuai , Gong, Zhi-Na , Yun, Feng , Zhang, Ye , Ding, Wen . Time-resolved photoluminescence studies of InGaN/GaN multi-quantum-wells blue and green light-emitting diodes at room temperature . | OPTIK , 2016 , 127 (4) , 1809-1813 .
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